All IGBT. FGH40N60UF Datasheet

 

FGH40N60UF Datasheet and Replacement


   Type Designator: FGH40N60UF
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 290 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 44 nS
   Coesⓘ - Output Capacitance, typ: 200 pF
   Qgⓘ - Total Gate Charge, typ: 120 nC
   Package: TO247
      - IGBT Cross-Reference

 

FGH40N60UF Datasheet (PDF)

 ..1. Size:705K  fairchild semi
fgh40n60uf.pdf pdf_icon

FGH40N60UF

July 2008FGH40N60UFtm600V, 40A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new ses-ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage: VCE(sat) =1.8V @ IC = 40AInduction Heating, UPS, SMPS and PFC applications where low High input impedanceconduction and swit

 ..2. Size:1154K  onsemi
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FGH40N60UF

FGH40N60UF600 V, 40 A Field Stop IGBTGeneral DescriptionUsing novel field stop IGBT technology, ON Semicondcutors Features field stop IGBTs offer the optimum performance for solar High Current Capabilityinverter, UPS, welder and PFC applications where low Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A conduction and switch-ing losses are essential. High Inp

 0.1. Size:723K  fairchild semi
fgh40n60ufd.pdf pdf_icon

FGH40N60UF

April 2009FGH40N60UFDtm600V, 40A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new ses-ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage: VCE(sat) =1.8V @ IC = 40AInduction Heating, UPS, SMPS and PFC applications where low High input impedanceconduction and sw

 0.2. Size:535K  onsemi
fgh40n60ufd.pdf pdf_icon

FGH40N60UF

IGBT - Field Stop600 V, 40 AFGH40N60UFDDescriptionUsing novel Field Stop IGBT technology, ON Semiconductorsfield stop IGBTs offer the optimum performance for solar inverter,www.onsemi.comUPS, welder, microwave oven, telecom, ESS and PFC applicationswhere low conduction and switching losses are essential.VCES ICFeatures600 V 40 A High Current CapabilityC Low

Datasheet: FGH20N60UFD , FGH25N120FTDS , FGH30N120FTD , FGH30N60LSD , FGH40N60SF , FGH40N60SFD , FGH40N60SMD , FGH40N60SMDF , IKW40N65WR5 , FGH40N60UFD , FGH40N65UFD , FGH50N3 , FGH60N60SF , FGH60N60SFD , FGH60N60SMD , FGH60N60UFD , FGH75N60UF .

History: APT100GF60JU3

Keywords - FGH40N60UF transistor datasheet

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