All IGBT. FGH40N60UF Datasheet

 

FGH40N60UF IGBT. Datasheet pdf. Equivalent

Type Designator: FGH40N60UF

Type: IGBT

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 290

Maximum Collector-Emitter Voltage |Vce|, V: 600

Maximum Gate-Emitter Voltage |Vge|, V: 20

Maximum Collector Current |Ic| @25℃, A: 80

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.8

Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5

Maximum Junction Temperature (Tj), ℃: 150

Rise Time (tr), typ, nS: 44

Collector Capacity (Cc), typ, pF: 200

Total Gate Charge (Qg), typ, nC: 120

Package: TO247

FGH40N60UF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FGH40N60UF Datasheet (PDF)

 ..1. Size:705K  fairchild semi
fgh40n60uf.pdf

FGH40N60UF FGH40N60UF

July 2008FGH40N60UFtm600V, 40A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new ses-ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage: VCE(sat) =1.8V @ IC = 40AInduction Heating, UPS, SMPS and PFC applications where low High input impedanceconduction and swit

 ..2. Size:1154K  onsemi
fgh40n60uf.pdf

FGH40N60UF FGH40N60UF

FGH40N60UF600 V, 40 A Field Stop IGBTGeneral DescriptionUsing novel field stop IGBT technology, ON Semicondcutors Features field stop IGBTs offer the optimum performance for solar High Current Capabilityinverter, UPS, welder and PFC applications where low Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A conduction and switch-ing losses are essential. High Inp

 0.1. Size:723K  fairchild semi
fgh40n60ufd.pdf

FGH40N60UF FGH40N60UF

April 2009FGH40N60UFDtm600V, 40A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new ses-ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage: VCE(sat) =1.8V @ IC = 40AInduction Heating, UPS, SMPS and PFC applications where low High input impedanceconduction and sw

 0.2. Size:535K  onsemi
fgh40n60ufd.pdf

FGH40N60UF FGH40N60UF

IGBT - Field Stop600 V, 40 AFGH40N60UFDDescriptionUsing novel Field Stop IGBT technology, ON Semiconductorsfield stop IGBTs offer the optimum performance for solar inverter,www.onsemi.comUPS, welder, microwave oven, telecom, ESS and PFC applicationswhere low conduction and switching losses are essential.VCES ICFeatures600 V 40 A High Current CapabilityC Low

 6.1. Size:1290K  fairchild semi
fgh40n60smd.pdf

FGH40N60UF FGH40N60UF

November 2010FGH40N60SMD600V, 40A Field Stop IGBTFeatures General Description Maximum Junction Temperature : TJ =175oC Using Novel Field Stop IGBT Technology, Fairchilds new seriesof Field Stop IGBTs offer the optimum performance for Solar Positive Temperaure Co-efficient for easy parallel operatingInverter, UPS, Welder and SMPS applications where low con- High curre

 6.2. Size:677K  fairchild semi
fgh40n60sf.pdf

FGH40N60UF FGH40N60UF

March 2009FGH40N60SFtm600V, 40A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new ses-ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage: VCE(sat) =2.3V @ IC = 40AInverter, UPS, SMPS and PFC applications where low conduc- High input impedancetion and switching

 6.3. Size:806K  fairchild semi
fgh40n60sfd.pdf

FGH40N60UF FGH40N60UF

July 2008FGH40N60SFDtm600V, 40A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new ses-ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage: VCE(sat) =2.3V @ IC = 40AInduction Heating, UPS, SMPS and PFC applications where High input impedancelow conduction and swi

 6.4. Size:352K  fairchild semi
fgh40n60smdf.pdf

FGH40N60UF FGH40N60UF

March 2011FGH40N60SMDFtm600V, 40A Field Stop IGBTFeatures General Description Maximum Junction Temperature : TJ =175oC Using Novel Field Stop IGBT Technology, Fairchilds new series of Field Stop IGBTs offer the optimum performance for Solar Positive Temperaure Co-efficient for easy parallel operatingInverter, UPS, SMPS, IH and PFC applications where low con- High

 6.5. Size:303K  onsemi
fgh40n60smd.pdf

FGH40N60UF FGH40N60UF

April 2013FGH40N60SMD600 V, 40 A Field Stop IGBTFeatures General Description Maximum Junction Temperature : TJ = 175oC Using novel field stop IGBT technology, Fairchilds new seriesof field stop 2nd generation IGBTs offer the optimum perfor- Positive Temperaure Co-efficient for Easy Parallel Operatingmance for solar inverter, UPS, welder, telecom, ESS and PFC High C

 6.6. Size:507K  onsemi
fgh40n60sf.pdf

FGH40N60UF FGH40N60UF

IGBT - Field Stop600 V, 40 AFGH40N60SFDescriptionUsing novel field stop IGBT technology, ON Semiconductors fieldstop IGBTs offer the optimum performance for solar inverter, UPS,www.onsemi.comwelder and PFC applications where low conduction and switchinglosses are essential.CFeatures High Current Capability Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 AG

 6.7. Size:435K  onsemi
fgh40n60sfd.pdf

FGH40N60UF FGH40N60UF

March 2015FGH40N60SFD600 V, 40 A Field Stop IGBTFeatures General Description High Current Capability Using novel field stop IGBT technology, Fairchilds field stopIGBTs offer the optimum performance for solar inverter, UPS, Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 Awelder, microwave oven, telecom, ESS and PFC applications High Input Impedancewhere low cond

 6.8. Size:578K  onsemi
fgh40n60smdf.pdf

FGH40N60UF FGH40N60UF

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.9. Size:803K  onsemi
fgh40n60sfdtu fgh40n60sfdtu-f085.pdf

FGH40N60UF FGH40N60UF

IGBT - Field Stop 600 V, 40 AFGH40N60SFDTU,FGH40N60SFDTU-F085DescriptionUsing Novel Field Stop IGBT Technology, ON Semiconductorswww.onsemi.comnew series of Field Stop IGBTs offer the optimum performance forAutomotive Chargers, Inverter, and other applications where lowconduction and switching losses are essential.CFeatures High Current Capability Low Saturati

 6.10. Size:482K  onsemi
fgh40n60smdf-f085.pdf

FGH40N60UF FGH40N60UF

IGBT - Field Stop600 V, 40 AFGH40N60SMDF-F085DescriptionUsing Novel Field Stop IGBT Technology, ON Semiconductor newseries of Field Stop IGBTs offer the optimum performancewww.onsemi.comfor Automotive Chargers, Inverter, and other applications where lowconduction and switching losses are essential.VCES ICFeatures600 V 40 A Max Junction Temperature TJ = 175CC

 6.11. Size:369K  onsemi
fgh40n60smd-f085.pdf

FGH40N60UF FGH40N60UF

IGBT - Field Stop 600 V, 40 AFGH40N60SMD-F085DescriptionUsing Novel Field Stop IGBT Technology, ON Semiconductorsnew series of Field Stop IGBTs offer the optimum performance forwww.onsemi.comAutomotive Chargers, Inverter, and other applications where lowconduction and switching losses are essential.FeaturesC Maximum Junction Temperature: TJ = 175C Positive Tem

Datasheet: FGH20N60UFD , FGH25N120FTDS , FGH30N120FTD , FGH30N60LSD , FGH40N60SF , FGH40N60SFD , FGH40N60SMD , FGH40N60SMDF , IKW30N65WR5 , FGH40N60UFD , FGH40N65UFD , FGH50N3 , FGH60N60SF , FGH60N60SFD , FGH60N60SMD , FGH60N60UFD , FGH75N60UF .

 

 
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