FGH40N65UFD Todos los transistores

 

FGH40N65UFD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FGH40N65UFD

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 650

Voltaje de saturación colector-emisor (Vce sat): 1.8

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 40

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO247

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FGH40N65UFD Datasheet (PDF)

1.1. fgh40n65ufd.pdf Size:723K _fairchild_semi

FGH40N65UFD
FGH40N65UFD

March 2009 FGH40N65UFD tm 650V, 40A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new ses- ries of Field Stop IGBTs offer the optimum performance for • Low saturation voltage: VCE(sat) =1.8V @ IC = 40A Solar Inverter, UPS, SMPS and PFC applications where low • High input impedance conduction and switc

3.1. fgh40n60smd.pdf Size:1290K _fairchild_semi

FGH40N65UFD
FGH40N65UFD

November 2010 FGH40N60SMD 600V, 40A Field Stop IGBT Features General Description • Maximum Junction Temperature : TJ =175oC Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Solar • Positive Temperaure Co-efficient for easy parallel operating Inverter, UPS, Welder and SMPS applications where low con- • High curre

3.2. fgh40n60sf.pdf Size:677K _fairchild_semi

FGH40N65UFD
FGH40N65UFD

March 2009 FGH40N60SF tm 600V, 40A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new ses- ries of Field Stop IGBTs offer the optimum performance for • Low saturation voltage: VCE(sat) =2.3V @ IC = 40A Inverter, UPS, SMPS and PFC applications where low conduc- • High input impedance tion and switching

 3.3. fgh40n60ufd.pdf Size:723K _fairchild_semi

FGH40N65UFD
FGH40N65UFD

April 2009 FGH40N60UFD tm 600V, 40A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new ses- ries of Field Stop IGBTs offer the optimum performance for • Low saturation voltage: VCE(sat) =1.8V @ IC = 40A Induction Heating, UPS, SMPS and PFC applications where low • High input impedance conduction and sw

3.4. fgh40n60sfd.pdf Size:806K _fairchild_semi

FGH40N65UFD
FGH40N65UFD

July 2008 FGH40N60SFD tm 600V, 40A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new ses- ries of Field Stop IGBTs offer the optimum performance for • Low saturation voltage: VCE(sat) =2.3V @ IC = 40A Induction Heating, UPS, SMPS and PFC applications where • High input impedance low conduction and swi

 3.5. fgh40n60uf.pdf Size:705K _fairchild_semi

FGH40N65UFD
FGH40N65UFD

July 2008 FGH40N60UF tm 600V, 40A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new ses- ries of Field Stop IGBTs offer the optimum performance for • Low saturation voltage: VCE(sat) =1.8V @ IC = 40A Induction Heating, UPS, SMPS and PFC applications where low • High input impedance conduction and swit

3.6. fgh40n60smdf.pdf Size:352K _fairchild_semi

FGH40N65UFD
FGH40N65UFD

March 2011 FGH40N60SMDF tm 600V, 40A Field Stop IGBT Features General Description • Maximum Junction Temperature : TJ =175oC Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Solar • Positive Temperaure Co-efficient for easy parallel operating Inverter, UPS, SMPS, IH and PFC applications where low con- • High

Otros transistores... FGH30N120FTD , FGH30N60LSD , FGH40N60SF , FGH40N60SFD , FGH40N60SMD , FGH40N60SMDF , FGH40N60UF , FGH40N60UFD , IRG4PC50FD , FGH50N3 , FGH60N60SF , FGH60N60SFD , FGH60N60SMD , FGH60N60UFD , FGH75N60UF , FGH80N60FD , FGH80N60FD2 .

 

 
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