FGH40N65UFD Todos los transistores

 

FGH40N65UFD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FGH40N65UFD
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 290 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 44 nS
   Coesⓘ - Capacitancia de salida, typ: 200 pF
   Qgⓘ - Carga total de la puerta, typ: 120 nC
   Paquete / Cubierta: TO247
 

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FGH40N65UFD Datasheet (PDF)

 ..1. Size:723K  fairchild semi
fgh40n65ufd.pdf pdf_icon

FGH40N65UFD

March 2009FGH40N65UFDtm650V, 40A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new ses-ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage: VCE(sat) =1.8V @ IC = 40ASolar Inverter, UPS, SMPS and PFC applications where low High input impedanceconduction and switc

 0.1. Size:480K  onsemi
fgh40n65ufdtu fgh40n65ufdtu-f085.pdf pdf_icon

FGH40N65UFD

IGBT - Field Stop650 V, 40 AFGH40N65UFDTU,FGH40N65UFDTU-F085Descriptionwww.onsemi.comUsing novel field stop IGBT technology, ON Semiconductors fieldstop IGBTs offer the optimum performance for Automotive Chargers,VCES ICInverter, and other applications where low conduction and switchinglosses are essential.650 V 40 AFeaturesC High Current Capability Low Sa

 7.1. Size:705K  fairchild semi
fgh40n60uf.pdf pdf_icon

FGH40N65UFD

July 2008FGH40N60UFtm600V, 40A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new ses-ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage: VCE(sat) =1.8V @ IC = 40AInduction Heating, UPS, SMPS and PFC applications where low High input impedanceconduction and swit

 7.2. Size:723K  fairchild semi
fgh40n60ufd.pdf pdf_icon

FGH40N65UFD

April 2009FGH40N60UFDtm600V, 40A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new ses-ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage: VCE(sat) =1.8V @ IC = 40AInduction Heating, UPS, SMPS and PFC applications where low High input impedanceconduction and sw

Otros transistores... FGH30N120FTD , FGH30N60LSD , FGH40N60SF , FGH40N60SFD , FGH40N60SMD , FGH40N60SMDF , FGH40N60UF , FGH40N60UFD , BT15T120ANF , FGH50N3 , FGH60N60SF , FGH60N60SFD , FGH60N60SMD , FGH60N60UFD , FGH75N60UF , FGH80N60FD , FGH80N60FD2 .

 

 
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