Справочник IGBT. FGH40N65UFD

 

FGH40N65UFD Даташит. Аналоги. Параметры и характеристики.


   Наименование: FGH40N65UFD
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 290 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.8 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 44 nS
   Coesⓘ - Выходная емкость, типовая: 200 pF
   Qgⓘ - Общий заряд затвора, typ: 120 nC
   Тип корпуса: TO247
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FGH40N65UFD Datasheet (PDF)

 ..1. Size:723K  fairchild semi
fgh40n65ufd.pdfpdf_icon

FGH40N65UFD

March 2009FGH40N65UFDtm650V, 40A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new ses-ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage: VCE(sat) =1.8V @ IC = 40ASolar Inverter, UPS, SMPS and PFC applications where low High input impedanceconduction and switc

 0.1. Size:480K  onsemi
fgh40n65ufdtu fgh40n65ufdtu-f085.pdfpdf_icon

FGH40N65UFD

IGBT - Field Stop650 V, 40 AFGH40N65UFDTU,FGH40N65UFDTU-F085Descriptionwww.onsemi.comUsing novel field stop IGBT technology, ON Semiconductors fieldstop IGBTs offer the optimum performance for Automotive Chargers,VCES ICInverter, and other applications where low conduction and switchinglosses are essential.650 V 40 AFeaturesC High Current Capability Low Sa

 7.1. Size:705K  fairchild semi
fgh40n60uf.pdfpdf_icon

FGH40N65UFD

July 2008FGH40N60UFtm600V, 40A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new ses-ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage: VCE(sat) =1.8V @ IC = 40AInduction Heating, UPS, SMPS and PFC applications where low High input impedanceconduction and swit

 7.2. Size:723K  fairchild semi
fgh40n60ufd.pdfpdf_icon

FGH40N65UFD

April 2009FGH40N60UFDtm600V, 40A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new ses-ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage: VCE(sat) =1.8V @ IC = 40AInduction Heating, UPS, SMPS and PFC applications where low High input impedanceconduction and sw

Другие IGBT... FGH30N120FTD , FGH30N60LSD , FGH40N60SF , FGH40N60SFD , FGH40N60SMD , FGH40N60SMDF , FGH40N60UF , FGH40N60UFD , RJP6065DPM , FGH50N3 , FGH60N60SF , FGH60N60SFD , FGH60N60SMD , FGH60N60UFD , FGH75N60UF , FGH80N60FD , FGH80N60FD2 .

History: GT45G128 | FGH20N60UFD

 

 
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