FGH60N60SF IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGH60N60SF
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 378 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 120 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.3 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 42 nS
Coesⓘ - Capacitancia de salida, typ: 350 pF
Paquete / Cubierta: TO247
Búsqueda de reemplazo de FGH60N60SF IGBT
Principales características: FGH60N60SF
fgh60n60sf.pdf
July 2008 FGH60N60SF tm 600V, 60A Field Stop IGBT Features General Description High current capability Using Novel Field Stop IGBT Technology, Fairchild s new series of Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage VCE(sat) =2.3V @ IC = 60A Heating, UPS, SMPS and PFC applications where low conduc- High input impedance tion and switc
fgh60n60sf.pdf
IGBT - Field Stop 600 V, 60 A FGH60N60SF Description Using novel field stop IGBT technology, ON Semiconductor s field stop IGBTs offer the optimum performance for solar inverter, UPS, www.onsemi.com welder and PFC applications where low conduction and switching losses are essential. VCES IC Features 600 V 60 A High Current Capability C Low Saturation Voltage VCE(sat) =
fgh60n60sfd.pdf
April 2009 FGH60N60SFD tm 600V, 60A Field Stop IGBT Features General Description High current capability Using Novel Field Stop IGBT Technology, Fairchild s new series of Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage VCE(sat) =2.3V @ IC = 60A Heating, UPS, SMPS and PFC applications where low conduc- High input impedance tion and swi
fgh60n60sfd.pdf
August 2008 FGH60N60SFD tm 600V, 60A Field Stop IGBT Features General Description High current capability Using Novel Field Stop IGBT Technology, Fairchild s new series of Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage VCE(sat) =2.3V @ IC = 60A Heating, UPS, SMPS and PFC applications where low conduc- High input impedance tion and sw
Otros transistores... FGH40N60SF , FGH40N60SFD , FGH40N60SMD , FGH40N60SMDF , FGH40N60UF , FGH40N60UFD , FGH40N65UFD , FGH50N3 , RJP63K2DPP-M0 , FGH60N60SFD , FGH60N60SMD , FGH60N60UFD , FGH75N60UF , FGH80N60FD , FGH80N60FD2 , FGL35N120FTD , FGL60N100BNTD .
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