FGH60N60SF Todos los transistores

 

FGH60N60SF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FGH60N60SF

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Máxima potencia disipada (Pc), W: 378

Tensión máxima colector-emisor |Vce|, V: 600

Tensión máxima puerta-emisor |Vge|, V: 20

Colector de Corriente Continua a 25℃ |Ic|, A: 120

Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.3

Tensión máxima de puerta-umbral |VGE(th)|, V: 6.5

Temperatura máxima de unión (Tj), ℃: 150

Tiempo de subida (tr), typ, nS: 42

Capacitancia de salida (Cc), typ, pF: 350

Carga total de la puerta (Qg), typ, nC: 198

Paquete / Cubierta: TO247

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FGH60N60SF Datasheet (PDF)

 ..1. Size:647K  fairchild semi
fgh60n60sf.pdf

FGH60N60SF FGH60N60SF

July 2008FGH60N60SFtm600V, 60A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new seriesof Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage: VCE(sat) =2.3V @ IC = 60AHeating, UPS, SMPS and PFC applications where low conduc- High input impedancetion and switc

 ..2. Size:396K  onsemi
fgh60n60sf.pdf

FGH60N60SF FGH60N60SF

IGBT - Field Stop600 V, 60 AFGH60N60SFDescriptionUsing novel field stop IGBT technology, ON Semiconductors fieldstop IGBTs offer the optimum performance for solar inverter, UPS,www.onsemi.comwelder and PFC applications where low conduction and switchinglosses are essential.VCES ICFeatures600 V 60 A High Current CapabilityC Low Saturation Voltage: VCE(sat) =

 0.1. Size:756K  fairchild semi
fgh60n60sfd.pdf

FGH60N60SF FGH60N60SF

April 2009FGH60N60SFDtm600V, 60A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new seriesof Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage: VCE(sat) =2.3V @ IC = 60AHeating, UPS, SMPS and PFC applications where low conduc- High input impedancetion and swi

 0.2. Size:768K  onsemi
fgh60n60sfd.pdf

FGH60N60SF FGH60N60SF

August 2008FGH60N60SFDtm600V, 60A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new seriesof Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage: VCE(sat) =2.3V @ IC = 60AHeating, UPS, SMPS and PFC applications where low conduc- High input impedancetion and sw

 0.3. Size:476K  onsemi
fgh60n60sfdtu-f085.pdf

FGH60N60SF FGH60N60SF

IGBT - Field Stop600 V, 60 AFGH60N60SFDTU-F085DescriptionUsing Novel Field Stop IGBT Technology, ON Semiconductorsnew series of Field Stop IGBTs offer the optimum performance forwww.onsemi.comAutomotive Chargers, Inverter, and other applications where lowconduction and switching losses are essential.CFeatures High Current Capability Low Saturation Voltage: VCE(s

Otros transistores... FGH40N60SF , FGH40N60SFD , FGH40N60SMD , FGH40N60SMDF , FGH40N60UF , FGH40N60UFD , FGH40N65UFD , FGH50N3 , GT30J124 , FGH60N60SFD , FGH60N60SMD , FGH60N60UFD , FGH75N60UF , FGH80N60FD , FGH80N60FD2 , FGL35N120FTD , FGL60N100BNTD .

 

 
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