Справочник IGBT. FGH60N60SF

 

FGH60N60SF - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: FGH60N60SF

Тип транзистора: IGBT

Тип управляющего канала: N

Максимальная рассеиваемая мощность (Pc), W: 378

Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 600

Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20

Максимальный постоянный ток коллектора |Ic| @25℃, A: 120

Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 2.3

Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 6.5

Максимальная температура перехода (Tj), ℃: 150

Время нарастания типовое (tr), nS: 42

Емкость коллектора типовая (Cc), pf: 350

Общий заряд затвора (Qg), typ, nC: 198

Тип корпуса: TO247

Аналог (замена) для FGH60N60SF

 

 

FGH60N60SF Datasheet (PDF)

 ..1. Size:647K  fairchild semi
fgh60n60sf.pdf

FGH60N60SF
FGH60N60SF

July 2008FGH60N60SFtm600V, 60A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new seriesof Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage: VCE(sat) =2.3V @ IC = 60AHeating, UPS, SMPS and PFC applications where low conduc- High input impedancetion and switc

 ..2. Size:396K  onsemi
fgh60n60sf.pdf

FGH60N60SF
FGH60N60SF

IGBT - Field Stop600 V, 60 AFGH60N60SFDescriptionUsing novel field stop IGBT technology, ON Semiconductors fieldstop IGBTs offer the optimum performance for solar inverter, UPS,www.onsemi.comwelder and PFC applications where low conduction and switchinglosses are essential.VCES ICFeatures600 V 60 A High Current CapabilityC Low Saturation Voltage: VCE(sat) =

 0.1. Size:756K  fairchild semi
fgh60n60sfd.pdf

FGH60N60SF
FGH60N60SF

April 2009FGH60N60SFDtm600V, 60A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new seriesof Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage: VCE(sat) =2.3V @ IC = 60AHeating, UPS, SMPS and PFC applications where low conduc- High input impedancetion and swi

 0.2. Size:768K  onsemi
fgh60n60sfd.pdf

FGH60N60SF
FGH60N60SF

August 2008FGH60N60SFDtm600V, 60A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new seriesof Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage: VCE(sat) =2.3V @ IC = 60AHeating, UPS, SMPS and PFC applications where low conduc- High input impedancetion and sw

 0.3. Size:476K  onsemi
fgh60n60sfdtu-f085.pdf

FGH60N60SF
FGH60N60SF

IGBT - Field Stop600 V, 60 AFGH60N60SFDTU-F085DescriptionUsing Novel Field Stop IGBT Technology, ON Semiconductorsnew series of Field Stop IGBTs offer the optimum performance forwww.onsemi.comAutomotive Chargers, Inverter, and other applications where lowconduction and switching losses are essential.CFeatures High Current Capability Low Saturation Voltage: VCE(s

Другие IGBT... FGH40N60SF , FGH40N60SFD , FGH40N60SMD , FGH40N60SMDF , FGH40N60UF , FGH40N60UFD , FGH40N65UFD , FGH50N3 , GT30J124 , FGH60N60SFD , FGH60N60SMD , FGH60N60UFD , FGH75N60UF , FGH80N60FD , FGH80N60FD2 , FGL35N120FTD , FGL60N100BNTD .

 

 
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