FGH75N60UF IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGH75N60UF
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 452
W
|Vce|ⓘ - Tensión máxima colector-emisor: 600
V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 1.9
V @25℃
Tjⓘ -
Temperatura máxima de unión: 150
℃
trⓘ - Tiempo de subida, typ: 70
nS
Coesⓘ - Capacitancia de salida, typ: 375
pF
Paquete / Cubierta:
TO247
Búsqueda de reemplazo de FGH75N60UF - IGBT
Principales características: FGH75N60UF
..1. Size:258K fairchild semi
fgh75n60uf.pdf 

April 2009 FGH75N60UF tm 600V, 75A Field Stop IGBT Features General Description High Current Capability Using Novel Field Stop IGBT Technology, Fairchild s new series of Field Stop IGBTs offer the optimum performance for Low Saturation Voltage VCE(sat) =1.9V @ IC = 75A Induction Heating, UPS, SMPS and PFC applications where low High Input Impedance conduction and switch
..2. Size:437K onsemi
fgh75n60uf.pdf 

IGBT - Field Stop 600 V, 75 A FGH75N60UF Description Using novel field stop IGBT technology, ON Semiconductor s field stop IGBTs offer the optimum performance for solar inverter, UPS, www.onsemi.com welder and PFC applications where low conduction and switching losses are essential. VCES IC Features 600 V 75 A High Current Capability C Low Saturation Voltage VCE(sat) =
9.1. Size:910K fairchild semi
fgh75t65upd.pdf 

August 2012 FGH75T65UPD 650V, 75A Field Stop Trench IGBT Features General Description Maximum Junction Temperature TJ = 175oC Using Novel Field Stop Trench IGBT Technology, Fairchild s new series of Field Stop Trench IGBTs offer the optimum perfor- Positive Temperaure Co-efficient for easy parallel operating mance for Solar Inverter , UPS and Digital Power Generator High
9.2. Size:522K onsemi
fgh75t65sqd.pdf 

IGBT - Field Stop, Trench 650 V, 75 A FGH75T65SQD Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 4th generation IGBTs offer the optimum www.onsemi.com performance for solar inverter, UPS, Welder, Telecom, ESS and PFC applications where low conduction and switching losses are essential. C Features Maximum Junction Temperature TJ
9.3. Size:698K onsemi
fgh75t65sqdtl4.pdf 

IGBT - Field Stop, Trench 650 V, 75 A FGH75T65SQDTL4 Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 4th generation IGBTs offer the optimum www.onsemi.com performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. VCES IC Features 650 V 75 A Maximum Junc
9.4. Size:599K onsemi
fgh75t65upd fgh75t65upd-f155.pdf 

IGBT - Field Stop, Trench 650 V, 75 A FGH75T65UPD, FGH75T65UPD-F155 Description www.onsemi.com Using innovative field stop trench IGBT technology, ON Semiconductor s new series of field-stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital C power genera-tor where low conduction and switching losses are essential. Features G Maximum Junctio
9.5. Size:1229K onsemi
fgh75t65sqdt.pdf 

FGH75T65SQDT 650 V, 75 A Field Stop Trench IGBT Features General Description Maximum Junction Temperature TJ = 175oC Using novel field stop IGBT technology, ON semiconductor s new series of field stop 4th generation IGBTs offer he optimum Positive Temperature Co-efficient for Easy Parallel Operating performance for solar inverter, UPS, welder, telecom, ESS and High Curr
9.6. Size:570K onsemi
fgh75t65shdtl4.pdf 

IGBT - Field Stop, Trench 650 V, 75 A FGH75T65SHDTL4 Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 3rd generation IGBTs offer the optimum www.onsemi.com performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. VCES IC Features 650 V 75 A Maximum Junc
9.7. Size:453K onsemi
fgh75t65shdtln4.pdf 

IGBT - Field Stop, Trench 650 V, 75 A Product Preview FGH75T65SHDTLN4 Using the novel field stop 3rd generation IGBT technology, FGH75T65SHDTLN4 offers the optimum performance for solar www.onsemi.com inverter, UPS, welder, telecom, ESS and PFC applications where low conduction loss and switching loss are essential. Features 75 A, 650 V Maximum Junction Temperature TJ = 175 C
9.8. Size:1426K onsemi
fgh75t65shd.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.9. Size:1176K onsemi
fgh75t65shdt.pdf 

FGH75T65SHDT 650 V, 75 A Field Stop Trench IGBT Features General Description Maximum Junction Temperature TJ = 175oC Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 3rd generation IGBTs offer the optimum Positive Temperature Co-efficient for Easy Parallel Operating performance for solar inverter, UPS, welder, telecom, ESS and High Cur
9.10. Size:386K onsemi
fgh75t65upd-f085.pdf 

IGBT - Field Stop, Trench 650 V, 75 A FGH75T65UPD-F085 Description Using Novel Field Stop Trench IGBT Technology, ON Semiconductor s new series of Field Stop Trench IGBTs offer www.onsemi.com the optimum performance for Automotive chargers, Solar Inverter, UPS and Digital Power Generator where low conduction and switching losses are essential. C Features Maximum Junction Tempe
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