FGH75N60UF Todos los transistores

 

FGH75N60UF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FGH75N60UF

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 1.9

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 75

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO247

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FGH75N60UF Datasheet (PDF)

1.1. fgh75n60uf.pdf Size:258K _fairchild_semi

FGH75N60UF
FGH75N60UF

April 2009 FGH75N60UF tm 600V, 75A Field Stop IGBT Features General Description • High Current Capability Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for • Low Saturation Voltage: VCE(sat) =1.9V @ IC = 75A Induction Heating, UPS, SMPS and PFC applications where low • High Input Impedance conduction and switch

5.1. fgh75t65upd.pdf Size:910K _fairchild_semi

FGH75N60UF
FGH75N60UF

August 2012 FGH75T65UPD 650V, 75A Field Stop Trench IGBT Features General Description • Maximum Junction Temperature : TJ = 175oC Using Novel Field Stop Trench IGBT Technology, Fairchild’s new series of Field Stop Trench IGBTs offer the optimum perfor- • Positive Temperaure Co-efficient for easy parallel operating mance for Solar Inverter , UPS and Digital Power Generator • High

Otros transistores... FGH40N60UF , FGH40N60UFD , FGH40N65UFD , FGH50N3 , FGH60N60SF , FGH60N60SFD , FGH60N60SMD , FGH60N60UFD , G20N60B3D , FGH80N60FD , FGH80N60FD2 , FGL35N120FTD , FGL60N100BNTD , FGP20N60UFD , FGP5N60LS , FGPF4533 , FGPF4536 .

 

 
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