FGH75N60UF Todos los transistores

 

FGH75N60UF IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FGH75N60UF
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 452 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 70 nS
   Coesⓘ - Capacitancia de salida, typ: 375 pF
   Paquete / Cubierta: TO247

 Búsqueda de reemplazo de FGH75N60UF - IGBT

 

Principales características: FGH75N60UF

 ..1. Size:258K  fairchild semi
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FGH75N60UF

April 2009 FGH75N60UF tm 600V, 75A Field Stop IGBT Features General Description High Current Capability Using Novel Field Stop IGBT Technology, Fairchild s new series of Field Stop IGBTs offer the optimum performance for Low Saturation Voltage VCE(sat) =1.9V @ IC = 75A Induction Heating, UPS, SMPS and PFC applications where low High Input Impedance conduction and switch

 ..2. Size:437K  onsemi
fgh75n60uf.pdf pdf_icon

FGH75N60UF

IGBT - Field Stop 600 V, 75 A FGH75N60UF Description Using novel field stop IGBT technology, ON Semiconductor s field stop IGBTs offer the optimum performance for solar inverter, UPS, www.onsemi.com welder and PFC applications where low conduction and switching losses are essential. VCES IC Features 600 V 75 A High Current Capability C Low Saturation Voltage VCE(sat) =

 9.1. Size:910K  fairchild semi
fgh75t65upd.pdf pdf_icon

FGH75N60UF

August 2012 FGH75T65UPD 650V, 75A Field Stop Trench IGBT Features General Description Maximum Junction Temperature TJ = 175oC Using Novel Field Stop Trench IGBT Technology, Fairchild s new series of Field Stop Trench IGBTs offer the optimum perfor- Positive Temperaure Co-efficient for easy parallel operating mance for Solar Inverter , UPS and Digital Power Generator High

 9.2. Size:522K  onsemi
fgh75t65sqd.pdf pdf_icon

FGH75N60UF

IGBT - Field Stop, Trench 650 V, 75 A FGH75T65SQD Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 4th generation IGBTs offer the optimum www.onsemi.com performance for solar inverter, UPS, Welder, Telecom, ESS and PFC applications where low conduction and switching losses are essential. C Features Maximum Junction Temperature TJ

Otros transistores... FGH40N60UF , FGH40N60UFD , FGH40N65UFD , FGH50N3 , FGH60N60SF , FGH60N60SFD , FGH60N60SMD , FGH60N60UFD , GT30J124 , FGH80N60FD , FGH80N60FD2 , FGL35N120FTD , FGL60N100BNTD , FGP20N60UFD , FGP5N60LS , FGPF4533 , FGPF4536 .

 

 
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