FGH75N60UF Todos los transistores

 

FGH75N60UF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FGH75N60UF
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 452 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 70 nS
   Coesⓘ - Capacitancia de salida, typ: 375 pF
   Qgⓘ - Carga total de la puerta, typ: 250 nC
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

FGH75N60UF Datasheet (PDF)

 ..1. Size:258K  fairchild semi
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FGH75N60UF

April 2009FGH75N60UFtm600V, 75A Field Stop IGBTFeatures General Description High Current Capability Using Novel Field Stop IGBT Technology, Fairchilds newseries of Field Stop IGBTs offer the optimum performance for Low Saturation Voltage: VCE(sat) =1.9V @ IC = 75AInduction Heating, UPS, SMPS and PFC applications where low High Input Impedanceconduction and switch

 ..2. Size:437K  onsemi
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FGH75N60UF

IGBT - Field Stop600 V, 75 AFGH75N60UFDescriptionUsing novel field stop IGBT technology, ON Semiconductors fieldstop IGBTs offer the optimum performance for solar inverter, UPS,www.onsemi.comwelder and PFC applications where low conduction and switchinglosses are essential.VCES ICFeatures600 V 75 A High Current CapabilityC Low Saturation Voltage: VCE(sat) =

 9.1. Size:910K  fairchild semi
fgh75t65upd.pdf pdf_icon

FGH75N60UF

August 2012FGH75T65UPD650V, 75A Field Stop Trench IGBTFeatures General Description Maximum Junction Temperature : TJ = 175oC Using Novel Field Stop Trench IGBT Technology, Fairchildsnew series of Field Stop Trench IGBTs offer the optimum perfor- Positive Temperaure Co-efficient for easy parallel operatingmance for Solar Inverter , UPS and Digital Power Generator High

 9.2. Size:522K  onsemi
fgh75t65sqd.pdf pdf_icon

FGH75N60UF

IGBT - Field Stop, Trench650 V, 75 AFGH75T65SQDDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 4th generation IGBTs offer the optimumwww.onsemi.comperformance for solar inverter, UPS, Welder, Telecom, ESS and PFCapplications where low conduction and switching losses are essential.CFeatures Maximum Junction Temperature : TJ

Otros transistores... FGH40N60UF , FGH40N60UFD , FGH40N65UFD , FGH50N3 , FGH60N60SF , FGH60N60SFD , FGH60N60SMD , FGH60N60UFD , GT50JR22 , FGH80N60FD , FGH80N60FD2 , FGL35N120FTD , FGL60N100BNTD , FGP20N60UFD , FGP5N60LS , FGPF4533 , FGPF4536 .

History: JT075N065WED | IHW30N90R | BT30N60ANF | GT30F123 | HGTG20N60C3D | MM10G3T120B | RJP30H1DPP-M0

 

 
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