FGH75N60UF IGBT. Datasheet pdf. Equivalent
Type Designator: FGH75N60UF
Type: IGBT
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 452
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 150
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.9
Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 70
Collector Capacity (Cc), typ, pF: 375
Total Gate Charge (Qg), typ, nC: 250
Package: TO247
FGH75N60UF Transistor Equivalent Substitute - IGBT Cross-Reference Search
FGH75N60UF Datasheet (PDF)
fgh75n60uf.pdf
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April 2009FGH75N60UFtm600V, 75A Field Stop IGBTFeatures General Description High Current Capability Using Novel Field Stop IGBT Technology, Fairchilds newseries of Field Stop IGBTs offer the optimum performance for Low Saturation Voltage: VCE(sat) =1.9V @ IC = 75AInduction Heating, UPS, SMPS and PFC applications where low High Input Impedanceconduction and switch
fgh75n60uf.pdf
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IGBT - Field Stop600 V, 75 AFGH75N60UFDescriptionUsing novel field stop IGBT technology, ON Semiconductors fieldstop IGBTs offer the optimum performance for solar inverter, UPS,www.onsemi.comwelder and PFC applications where low conduction and switchinglosses are essential.VCES ICFeatures600 V 75 A High Current CapabilityC Low Saturation Voltage: VCE(sat) =
fgh75t65upd.pdf
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August 2012FGH75T65UPD650V, 75A Field Stop Trench IGBTFeatures General Description Maximum Junction Temperature : TJ = 175oC Using Novel Field Stop Trench IGBT Technology, Fairchildsnew series of Field Stop Trench IGBTs offer the optimum perfor- Positive Temperaure Co-efficient for easy parallel operatingmance for Solar Inverter , UPS and Digital Power Generator High
fgh75t65sqd.pdf
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IGBT - Field Stop, Trench650 V, 75 AFGH75T65SQDDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 4th generation IGBTs offer the optimumwww.onsemi.comperformance for solar inverter, UPS, Welder, Telecom, ESS and PFCapplications where low conduction and switching losses are essential.CFeatures Maximum Junction Temperature : TJ
fgh75t65sqdtl4.pdf
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IGBT - Field Stop, Trench650 V, 75 AFGH75T65SQDTL4DescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 4th generation IGBTs offer the optimumwww.onsemi.comperformance for solar inverter, UPS, welder, telecom, ESS and PFCapplications where low conduction and switching losses are essential.VCES ICFeatures650 V 75 A Maximum Junc
fgh75t65upd fgh75t65upd-f155.pdf
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IGBT - Field Stop, Trench650 V, 75 AFGH75T65UPD,FGH75T65UPD-F155Descriptionwww.onsemi.comUsing innovative field stop trench IGBT technology,ON Semiconductors new series of field-stop trench IGBTs offeroptimum performance for solar inverter, UPS, welder, and digitalCpower genera-tor where low conduction and switching losses areessential.FeaturesG Maximum Junctio
fgh75t65sqdt.pdf
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FGH75T65SQDT650 V, 75 A Field Stop Trench IGBTFeatures General Description Maximum Junction Temperature: TJ = 175oC Using novel field stop IGBT technology, ON semiconductors new series of field stop 4th generation IGBTs offer he optimum Positive Temperature Co-efficient for Easy Parallel Operatingperformance for solar inverter, UPS, welder, telecom, ESS and High Curr
fgh75t65shdtl4.pdf
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IGBT - Field Stop, Trench650 V, 75 AFGH75T65SHDTL4DescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 3rd generation IGBTs offer the optimumwww.onsemi.comperformance for solar inverter, UPS, welder, telecom, ESS and PFCapplications where low conduction and switching losses are essential.VCES ICFeatures650 V 75 A Maximum Junc
fgh75t65shdtln4.pdf
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IGBT - Field Stop, Trench650 V, 75 AProduct PreviewFGH75T65SHDTLN4Using the novel field stop 3rd generation IGBT technology,FGH75T65SHDTLN4 offers the optimum performance for solarwww.onsemi.cominverter, UPS, welder, telecom, ESS and PFC applications where lowconduction loss and switching loss are essential.Features75 A, 650 V Maximum Junction Temperature: TJ = 175C
fgh75t65shd.pdf
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Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fgh75t65shdt.pdf
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FGH75T65SHDT650 V, 75 A Field Stop Trench IGBTFeatures General Description Maximum Junction Temperature: TJ = 175oC Using novel field stop IGBT technology, ON Semiconductors new series of field stop 3rd generation IGBTs offer the optimum Positive Temperature Co-efficient for Easy Parallel Operatingperformance for solar inverter, UPS, welder, telecom, ESS and High Cur
fgh75t65upd-f085.pdf
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IGBT - Field Stop, Trench650 V, 75 AFGH75T65UPD-F085DescriptionUsing Novel Field Stop Trench IGBT Technology,ON Semiconductors new series of Field Stop Trench IGBTs offerwww.onsemi.comthe optimum performance for Automotive chargers, Solar Inverter,UPS and Digital Power Generator where low conduction andswitching losses are essential.CFeatures Maximum Junction Tempe
Datasheet: FGH40N60UF , FGH40N60UFD , FGH40N65UFD , FGH50N3 , FGH60N60SF , FGH60N60SFD , FGH60N60SMD , FGH60N60UFD , MBQ60T65PES , FGH80N60FD , FGH80N60FD2 , FGL35N120FTD , FGL60N100BNTD , FGP20N60UFD , FGP5N60LS , FGPF4533 , FGPF4536 .
![FGH75N60UF](https://alltransistors.com/images/us.png)
![FGH75N60UF](https://alltransistors.com/images/es.png)
![FGH75N60UF](https://alltransistors.com/images/ru.png)
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