FGH75N60UF Specs and Replacement
Type Designator: FGH75N60UF
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ -
Maximum Power Dissipation: 452
W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600
V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20
V
|Ic| ⓘ - Maximum Collector Current: 150
A @25℃
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 1.9
V @25℃
Tj ⓘ -
Maximum Junction Temperature: 150
℃
tr ⓘ - Rise Time, typ: 70
nS
Coesⓘ - Output Capacitance, typ: 375
pF
Package:
TO247
-
IGBT ⓘ Cross-Reference Search
FGH75N60UF specs
..1. Size:258K fairchild semi
fgh75n60uf.pdf 

April 2009 FGH75N60UF tm 600V, 75A Field Stop IGBT Features General Description High Current Capability Using Novel Field Stop IGBT Technology, Fairchild s new series of Field Stop IGBTs offer the optimum performance for Low Saturation Voltage VCE(sat) =1.9V @ IC = 75A Induction Heating, UPS, SMPS and PFC applications where low High Input Impedance conduction and switch... See More ⇒
..2. Size:437K onsemi
fgh75n60uf.pdf 

IGBT - Field Stop 600 V, 75 A FGH75N60UF Description Using novel field stop IGBT technology, ON Semiconductor s field stop IGBTs offer the optimum performance for solar inverter, UPS, www.onsemi.com welder and PFC applications where low conduction and switching losses are essential. VCES IC Features 600 V 75 A High Current Capability C Low Saturation Voltage VCE(sat) = ... See More ⇒
9.1. Size:910K fairchild semi
fgh75t65upd.pdf 

August 2012 FGH75T65UPD 650V, 75A Field Stop Trench IGBT Features General Description Maximum Junction Temperature TJ = 175oC Using Novel Field Stop Trench IGBT Technology, Fairchild s new series of Field Stop Trench IGBTs offer the optimum perfor- Positive Temperaure Co-efficient for easy parallel operating mance for Solar Inverter , UPS and Digital Power Generator High... See More ⇒
9.2. Size:522K onsemi
fgh75t65sqd.pdf 

IGBT - Field Stop, Trench 650 V, 75 A FGH75T65SQD Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 4th generation IGBTs offer the optimum www.onsemi.com performance for solar inverter, UPS, Welder, Telecom, ESS and PFC applications where low conduction and switching losses are essential. C Features Maximum Junction Temperature TJ... See More ⇒
9.3. Size:698K onsemi
fgh75t65sqdtl4.pdf 

IGBT - Field Stop, Trench 650 V, 75 A FGH75T65SQDTL4 Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 4th generation IGBTs offer the optimum www.onsemi.com performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. VCES IC Features 650 V 75 A Maximum Junc... See More ⇒
9.4. Size:599K onsemi
fgh75t65upd fgh75t65upd-f155.pdf 

IGBT - Field Stop, Trench 650 V, 75 A FGH75T65UPD, FGH75T65UPD-F155 Description www.onsemi.com Using innovative field stop trench IGBT technology, ON Semiconductor s new series of field-stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital C power genera-tor where low conduction and switching losses are essential. Features G Maximum Junctio... See More ⇒
9.5. Size:1229K onsemi
fgh75t65sqdt.pdf 

FGH75T65SQDT 650 V, 75 A Field Stop Trench IGBT Features General Description Maximum Junction Temperature TJ = 175oC Using novel field stop IGBT technology, ON semiconductor s new series of field stop 4th generation IGBTs offer he optimum Positive Temperature Co-efficient for Easy Parallel Operating performance for solar inverter, UPS, welder, telecom, ESS and High Curr... See More ⇒
9.6. Size:570K onsemi
fgh75t65shdtl4.pdf 

IGBT - Field Stop, Trench 650 V, 75 A FGH75T65SHDTL4 Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 3rd generation IGBTs offer the optimum www.onsemi.com performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. VCES IC Features 650 V 75 A Maximum Junc... See More ⇒
9.7. Size:453K onsemi
fgh75t65shdtln4.pdf 

IGBT - Field Stop, Trench 650 V, 75 A Product Preview FGH75T65SHDTLN4 Using the novel field stop 3rd generation IGBT technology, FGH75T65SHDTLN4 offers the optimum performance for solar www.onsemi.com inverter, UPS, welder, telecom, ESS and PFC applications where low conduction loss and switching loss are essential. Features 75 A, 650 V Maximum Junction Temperature TJ = 175 C ... See More ⇒
9.8. Size:1426K onsemi
fgh75t65shd.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
9.9. Size:1176K onsemi
fgh75t65shdt.pdf 

FGH75T65SHDT 650 V, 75 A Field Stop Trench IGBT Features General Description Maximum Junction Temperature TJ = 175oC Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 3rd generation IGBTs offer the optimum Positive Temperature Co-efficient for Easy Parallel Operating performance for solar inverter, UPS, welder, telecom, ESS and High Cur... See More ⇒
9.10. Size:386K onsemi
fgh75t65upd-f085.pdf 

IGBT - Field Stop, Trench 650 V, 75 A FGH75T65UPD-F085 Description Using Novel Field Stop Trench IGBT Technology, ON Semiconductor s new series of Field Stop Trench IGBTs offer www.onsemi.com the optimum performance for Automotive chargers, Solar Inverter, UPS and Digital Power Generator where low conduction and switching losses are essential. C Features Maximum Junction Tempe... See More ⇒
Specs: FGH40N60UF
, FGH40N60UFD
, FGH40N65UFD
, FGH50N3
, FGH60N60SF
, FGH60N60SFD
, FGH60N60SMD
, FGH60N60UFD
, GT30J124
, FGH80N60FD
, FGH80N60FD2
, FGL35N120FTD
, FGL60N100BNTD
, FGP20N60UFD
, FGP5N60LS
, FGPF4533
, FGPF4536
.
Keywords - FGH75N60UF transistor spec
FGH75N60UF cross reference
FGH75N60UF equivalent finder
FGH75N60UF lookup
FGH75N60UF substitution
FGH75N60UF replacement