FGH80N60FD2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGH80N60FD2
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 290 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 56 nS
Coesⓘ - Capacitancia de salida, typ: 200 pF
Paquete / Cubierta: TO247
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FGH80N60FD2 Datasheet (PDF)
fgh80n60fd2.pdf
November FGH80N60FD2tm600V, 80A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new ses-ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage: VCE(sat) =1.8V @ IC = 40AInduction Heating applications where low conduction and High input impedanceswitching losses are e
fgh80n60fd2.pdf
IGBT - Field Stop600 V, 40 AFGH80N60FD2DescriptionUsing novel field stop IGBT technology, ON Semiconductors fieldstop IGBTs offer the optimum performance for induction heating andwww.onsemi.comPFC applications where low conduction and switching losses areessential.VCES ICFeatures600 V 40 A High Current Capability Low Saturation Voltage: VCE(sat) = 1.8 V (Typ.)
fgh80n60fd.pdf
November 2009FGH80N60FDtm600V, 80A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new ses-ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage: VCE(sat) =1.8V @ IC = 40AInduction Heating applications where low conduction and High input impedanceswitching losses ar
Otros transistores... FGH40N65UFD , FGH50N3 , FGH60N60SF , FGH60N60SFD , FGH60N60SMD , FGH60N60UFD , FGH75N60UF , FGH80N60FD , FGPF4536 , FGL35N120FTD , FGL60N100BNTD , FGP20N60UFD , FGP5N60LS , FGPF4533 , FGPF4536 , FGPF4633 , FGPF50N33BT .
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