FGH80N60FD2 Datasheet. Specs and Replacement
Type Designator: FGH80N60FD2 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 290 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
tr ⓘ - Rise Time, typ: 56 nS
Coesⓘ - Output Capacitance, typ: 200 pF
Package: TO247
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FGH80N60FD2 datasheet
fgh80n60fd2.pdf
November FGH80N60FD2 tm 600V, 80A Field Stop IGBT Features General Description High current capability Using Novel Field Stop IGBT Technology, Fairchild s new ses- ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage VCE(sat) =1.8V @ IC = 40A Induction Heating applications where low conduction and High input impedance switching losses are e... See More ⇒
fgh80n60fd2.pdf
IGBT - Field Stop 600 V, 40 A FGH80N60FD2 Description Using novel field stop IGBT technology, ON Semiconductor s field stop IGBTs offer the optimum performance for induction heating and www.onsemi.com PFC applications where low conduction and switching losses are essential. VCES IC Features 600 V 40 A High Current Capability Low Saturation Voltage VCE(sat) = 1.8 V (Typ.)... See More ⇒
fgh80n60fd.pdf
November 2009 FGH80N60FD tm 600V, 80A Field Stop IGBT Features General Description High current capability Using Novel Field Stop IGBT Technology, Fairchild s new ses- ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage VCE(sat) =1.8V @ IC = 40A Induction Heating applications where low conduction and High input impedance switching losses ar... See More ⇒
Specs: FGH40N65UFD, FGH50N3, FGH60N60SF, FGH60N60SFD, FGH60N60SMD, FGH60N60UFD, FGH75N60UF, FGH80N60FD, GT50JR22, FGL35N120FTD, FGL60N100BNTD, FGP20N60UFD, FGP5N60LS, FGPF4533, FGPF4536, FGPF4633, FGPF50N33BT
Keywords - FGH80N60FD2 transistor spec
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