FGH80N60FD2 IGBT. Datasheet pdf. Equivalent
Type Designator: FGH80N60FD2
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 290
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 80
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.8
Maximum G-E Threshold Voltag |VGE(th)|, V: 7
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 56
Collector Capacity (Cc), typ, pF: 200
Total Gate Charge (Qg), typ, nC: 120
Package: TO247
FGH80N60FD2 Transistor Equivalent Substitute - IGBT Cross-Reference Search
FGH80N60FD2 Datasheet (PDF)
fgh80n60fd2.pdf
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November FGH80N60FD2tm600V, 80A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new ses-ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage: VCE(sat) =1.8V @ IC = 40AInduction Heating applications where low conduction and High input impedanceswitching losses are e
fgh80n60fd2.pdf
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IGBT - Field Stop600 V, 40 AFGH80N60FD2DescriptionUsing novel field stop IGBT technology, ON Semiconductors fieldstop IGBTs offer the optimum performance for induction heating andwww.onsemi.comPFC applications where low conduction and switching losses areessential.VCES ICFeatures600 V 40 A High Current Capability Low Saturation Voltage: VCE(sat) = 1.8 V (Typ.)
fgh80n60fd.pdf
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November 2009FGH80N60FDtm600V, 80A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new ses-ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage: VCE(sat) =1.8V @ IC = 40AInduction Heating applications where low conduction and High input impedanceswitching losses ar
Datasheet: FGH40N65UFD , FGH50N3 , FGH60N60SF , FGH60N60SFD , FGH60N60SMD , FGH60N60UFD , FGH75N60UF , FGH80N60FD , FGPF4536 , FGL35N120FTD , FGL60N100BNTD , FGP20N60UFD , FGP5N60LS , FGPF4533 , FGPF4536 , FGPF4633 , FGPF50N33BT .
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