NGB8202N Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NGB8202N  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 150 W

|Vce|ⓘ - Tensión máxima colector-emisor: 400 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 15 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃

Coesⓘ - Capacitancia de salida, typ: 80 pF

Encapsulados: D2PAK

  📄📄 Copiar 

 Búsqueda de reemplazo de NGB8202N IGBT

- Selecciónⓘ de transistores por parámetros

 

NGB8202N datasheet

 ..1. Size:123K  1
ngb8202n ngb8202an.pdf pdf_icon

NGB8202N

NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2

 7.1. Size:123K  onsemi
ngb8202a.pdf pdf_icon

NGB8202N

NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2

 8.1. Size:130K  1
ngb8207n ngb8207bn.pdf pdf_icon

NGB8202N

NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2

 8.2. Size:123K  1
ngb8206n ngb8206an.pdf pdf_icon

NGB8202N

NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2

Otros transistores... FGPF50N33BT, FGY75N60SMD, SGF23N60UF, SGP10N60RUFD, SGS5N150UF, NGB15N41CL, NGB18N40CLB, NGB8202AN, GT30F126, NGB8204N, NGB8206AN, NGB8206N, NGB8207AN, NGB8207N, NGD15N41CL, NGD18N40CLB, NGD8201A