NGB8202N Todos los transistores

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NGB8202N - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NGB8202N

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150W

Tensión colector-emisor (Vce): 400V

Voltaje de saturación colector-emisor (Vce sat): 1.3V

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 20A

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: D2PAK-3

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NGB8202N Datasheet (PDF)

3.1. ngb8202a.pdf Size:123K _igbt

NGB8202N
NGB8202N

NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http://onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2

4.1. ngb8206a.pdf Size:123K _igbt

NGB8202N
NGB8202N

NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http://onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2

4.2. ngb8204a.pdf Size:126K _igbt

NGB8202N
NGB8202N

NGB8204N, NGB8204AN Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features http://onsemi.com monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses 18 AMPS, 400 VOLTS include Ignition, Direct Fuel Injection, or wherever high voltage and VCE(on) 3 2

4.3. ngb8207ab.pdf Size:124K _igbt

NGB8202N
NGB8202N

NGB8207AN, NGB8207ABN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http://onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

4.4. ngb8207b.pdf Size:130K _igbt

NGB8202N
NGB8202N

NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http://onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2

Otros transistores... FGPF50N33BT , FGY75N60SMD , SGF23N60UF , SGP10N60RUFD , SGS5N150UF , NGB15N41CLT4 , NGB18N40CLB , NGB8202A , GT50J101 , NGB8204N , NGB8206A , NGB8206N , NGB8207AN , NGB8207N , NGD15N41CLT4 , NGD18N40CLB , NGD8201A .

 


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Introduzca al menos 1 números o letras