NGB8202N Datasheet. Specs and Replacement

Type Designator: NGB8202N  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 150 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 15 V

|Ic| ⓘ - Maximum Collector Current: 20 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

Coesⓘ - Output Capacitance, typ: 80 pF

Package: D2PAK

  📄📄 Copy 

 NGB8202N Substitution

- IGBTⓘ Cross-Reference Search

 

NGB8202N datasheet

 ..1. Size:123K  1
 ngb8202n ngb8202an.pdf pdf_icon

NGB8202N

NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2... See More ⇒

 7.1. Size:123K  onsemi
 ngb8202a.pdf pdf_icon

NGB8202N

NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2... See More ⇒

 8.1. Size:130K  1
 ngb8207n ngb8207bn.pdf pdf_icon

NGB8202N

NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2... See More ⇒

 8.2. Size:123K  1
 ngb8206n ngb8206an.pdf pdf_icon

NGB8202N

NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2... See More ⇒

SHOW MORE

Specs: FGPF50N33BT, FGY75N60SMD, SGF23N60UF, SGP10N60RUFD, SGS5N150UF, NGB15N41CL, NGB18N40CLB, NGB8202AN, RJP30E2DPP-M0, NGB8204N, NGB8206AN, NGB8206N, NGB8207AN, NGB8207N, NGD15N41CL, NGD18N40CLB, NGD8201A

Keywords - NGB8202N transistor spec

 NGB8202N cross reference
 NGB8202N equivalent finder
 NGB8202N lookup
 NGB8202N substitution
 NGB8202N replacement