NGB8207N Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NGB8207N  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 165 W

|Vce|ⓘ - Tensión máxima colector-emisor: 365 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 15 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃

trⓘ - Tiempo de subida, typ: 2320 nS

Coesⓘ - Capacitancia de salida, typ: 90 pF

Encapsulados: D2PAK

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NGB8207N datasheet

 ..1. Size:130K  1
 ngb8207n ngb8207bn.pdf pdf_icon

NGB8207N

NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2

 7.1. Size:124K  1
 ngb8207an ngb8207abn.pdf pdf_icon

NGB8207N

NGB8207AN, NGB8207ABN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

 7.2. Size:130K  onsemi
 ngb8207b.pdf pdf_icon

NGB8207N

NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2

 7.3. Size:124K  onsemi
 ngb8207ab.pdf pdf_icon

NGB8207N

NGB8207AN, NGB8207ABN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

MOSTRAR MÁS

Otros transistores... NGB15N41CL, NGB18N40CLB, NGB8202AN, NGB8202N, NGB8204N, NGB8206AN, NGB8206N, NGB8207AN, YGW60N65F1A1, NGD15N41CL, NGD18N40CLB, NGD8201A, NGD8201N, NGD8205N, NGP15N41CL, FID60-06D, FII24N17AH1