NGB8207N datasheet, аналоги, основные параметры

Наименование: NGB8207N  📄📄 

Тип транзистора: IGBT + Built-in Zener Diodes

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 165 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 365 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 15 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 20 A @25℃

Tj ⓘ - Максимальная температура перехода: 175 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.5 V @25℃

|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 2 V

tr ⓘ - Время нарастания типовое: 2320 nS

Coesⓘ - Выходная емкость, типовая: 90 pF

Тип корпуса: D2PAK

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 Аналог (замена) для NGB8207N

- подбор ⓘ IGBT транзистора по параметрам

 

NGB8207N даташит

 ..1. Size:130K  1
 ngb8207n ngb8207bn.pdf pdf_icon

NGB8207N

NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2

 7.1. Size:124K  1
 ngb8207an ngb8207abn.pdf pdf_icon

NGB8207N

NGB8207AN, NGB8207ABN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

 7.2. Size:130K  onsemi
 ngb8207b.pdf pdf_icon

NGB8207N

NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2

 7.3. Size:124K  onsemi
 ngb8207ab.pdf pdf_icon

NGB8207N

NGB8207AN, NGB8207ABN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NGB15N41CL, NGB18N40CLB, NGB8202AN, NGB8202N, NGB8204N, NGB8206AN, NGB8206N, NGB8207AN, YGW60N65F1A1, NGD15N41CL, NGD18N40CLB, NGD8201A, NGD8201N, NGD8205N, NGP15N41CL, FID60-06D, FII24N17AH1