NGD8201A Todos los transistores

 

NGD8201A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NGD8201A

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 125

Tensión colector-emisor (Vce): 440

Voltaje de saturación colector-emisor (Vce sat): 1.15

Tensión emisor-compuerta (Veg): 15

Corriente del colector DC máxima (Ic): 20

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación: 6000

Capacitancia de salida (Cc), pF: 80

Empaquetado / Estuche: DPAK

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NGD8201A Datasheet (PDF)

..1. ngd8201a.pdf Size:123K _onsemi

NGD8201A
NGD8201A

NGD8201N, NGD8201ANIgnition IGBT20 A, 400 V, N-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary uses http://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required. 20 A

0.1. ngd8201n ngd8201an.pdf Size:121K _1

NGD8201A
NGD8201A

NGD8201N, NGD8201ANIgnition IGBT20 A, 400 V, N-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary uses http://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required. 20 A

7.1. ngd8201b.pdf Size:81K _onsemi

NGD8201A
NGD8201A

NGD8201BIgnition IGBT, 20 A, 400 VN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedprotection for use in inductive coil drivers applications. Primary useswww.onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.20 AMPS, 400 VO

7.2. ngd8201bnt4g.pdf Size:81K _onsemi

NGD8201A
NGD8201A

NGD8201BIgnition IGBT, 20 A, 400 VN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedprotection for use in inductive coil drivers applications. Primary useswww.onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.20 AMPS, 400 VO

Otros transistores... NGB8202N , NGB8204N , NGB8206A , NGB8206N , NGB8207AN , NGB8207N , NGD15N41CLT4 , NGD18N40CLB , STGW60V60DF , NGD8201N , NGD8205N , NGP15N41CL , FID60-06D , FII24N17AH1 , FII30-06D , FII30-12E , FII40-06D .

 

 
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