NGD8201A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NGD8201A  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 125 W

|Vce|ⓘ - Tensión máxima colector-emisor: 440 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 15 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.15 V @25℃

trⓘ - Tiempo de subida, typ: 6000 nS

Coesⓘ - Capacitancia de salida, typ: 80 pF

Encapsulados: DPAK

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NGD8201A datasheet

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NGD8201A

NGD8201N, NGD8201AN Ignition IGBT 20 A, 400 V, N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 A

 0.1. Size:121K  1
 ngd8201n ngd8201an.pdf pdf_icon

NGD8201A

NGD8201N, NGD8201AN Ignition IGBT 20 A, 400 V, N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 A

 7.1. Size:81K  onsemi
 ngd8201bnt4g.pdf pdf_icon

NGD8201A

NGD8201B Ignition IGBT, 20 A, 400 V N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses www.onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 AMPS, 400 VO

 7.2. Size:81K  onsemi
 ngd8201b.pdf pdf_icon

NGD8201A

NGD8201B Ignition IGBT, 20 A, 400 V N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses www.onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 AMPS, 400 VO

MOSTRAR MÁS

Otros transistores... NGB8202N, NGB8204N, NGB8206AN, NGB8206N, NGB8207AN, NGB8207N, NGD15N41CL, NGD18N40CLB, IHW20N120R3, NGD8201N, NGD8205N, NGP15N41CL, FID60-06D, FII24N17AH1, FII30-06D, FII30-12E, FII40-06D