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NGD8201A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NGD8201A
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 125 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 440 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 15 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.15 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 6000 nS
   Coesⓘ - Capacitancia de salida, typ: 80 pF
   Paquete / Cubierta: DPAK

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NGD8201A Datasheet (PDF)

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NGD8201A

NGD8201N, NGD8201AN Ignition IGBT 20 A, 400 V, N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 A

 0.1. Size:121K  1
 ngd8201n ngd8201an.pdf pdf_icon

NGD8201A

NGD8201N, NGD8201AN Ignition IGBT 20 A, 400 V, N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 A

 7.1. Size:81K  onsemi
 ngd8201bnt4g.pdf pdf_icon

NGD8201A

NGD8201B Ignition IGBT, 20 A, 400 V N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses www.onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 AMPS, 400 VO

 7.2. Size:81K  onsemi
 ngd8201b.pdf pdf_icon

NGD8201A

NGD8201B Ignition IGBT, 20 A, 400 V N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses www.onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 AMPS, 400 VO

MOSTRAR MÁS

Otros transistores... NGB8202N , NGB8204N , NGB8206AN , NGB8206N , NGB8207AN , NGB8207N , NGD15N41CL , NGD18N40CLB , IRGP4063D , NGD8201N , NGD8205N , NGP15N41CL , FID60-06D , FII24N17AH1 , FII30-06D , FII30-12E , FII40-06D .

 

 
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