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NGD8201A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NGD8201A
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 125 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 440 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 15 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.15 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 6000 nS
   Coesⓘ - Capacitancia de salida, typ: 80 pF
   Paquete / Cubierta: DPAK
 

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NGD8201A Datasheet (PDF)

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NGD8201A

NGD8201N, NGD8201ANIgnition IGBT20 A, 400 V, N-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary uses http://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required. 20 A

 0.1. Size:121K  1
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NGD8201A

NGD8201N, NGD8201ANIgnition IGBT20 A, 400 V, N-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary uses http://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required. 20 A

 7.1. Size:81K  onsemi
ngd8201bnt4g.pdf pdf_icon

NGD8201A

NGD8201BIgnition IGBT, 20 A, 400 VN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedprotection for use in inductive coil drivers applications. Primary useswww.onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.20 AMPS, 400 VO

 7.2. Size:81K  onsemi
ngd8201b.pdf pdf_icon

NGD8201A

NGD8201BIgnition IGBT, 20 A, 400 VN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedprotection for use in inductive coil drivers applications. Primary useswww.onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.20 AMPS, 400 VO

Otros transistores... NGB8202N , NGB8204N , NGB8206AN , NGB8206N , NGB8207AN , NGB8207N , NGD15N41CL , NGD18N40CLB , RJH3047 , NGD8201N , NGD8205N , NGP15N41CL , FID60-06D , FII24N17AH1 , FII30-06D , FII30-12E , FII40-06D .

 

 
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