NGD8201A
- IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NGD8201A
Tipo de transistor: IGBT + Built-in Zener Diodes
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 125
W
|Vce|ⓘ - Tensión máxima colector-emisor: 440
V
|Vge|ⓘ - Tensión máxima puerta-emisor: 15
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 1.15
V @25℃
|VGEth|ⓘ -
Tensión máxima de puerta-umbral: 2.1
V
Tjⓘ -
Temperatura máxima de unión: 175
℃
trⓘ - Tiempo de subida, typ: 6000
nS
Coesⓘ - Capacitancia de salida, typ: 80
pF
Paquete / Cubierta:
DPAK
Búsqueda de reemplazo de NGD8201A
- IGBT
NGD8201A
Datasheet (PDF)
..1. Size:123K onsemi
ngd8201a.pdf 
NGD8201N, NGD8201ANIgnition IGBT20 A, 400 V, N-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary uses http://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required. 20 A
0.1. Size:121K 1
ngd8201n ngd8201an.pdf
NGD8201N, NGD8201ANIgnition IGBT20 A, 400 V, N-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary uses http://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required. 20 A
7.1. Size:81K onsemi
ngd8201bnt4g.pdf
NGD8201BIgnition IGBT, 20 A, 400 VN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedprotection for use in inductive coil drivers applications. Primary useswww.onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.20 AMPS, 400 VO
7.2. Size:81K onsemi
ngd8201b.pdf
NGD8201BIgnition IGBT, 20 A, 400 VN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedprotection for use in inductive coil drivers applications. Primary useswww.onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.20 AMPS, 400 VO
Otros transistores... NGB8202N
, NGB8204N
, NGB8206AN
, NGB8206N
, NGB8207AN
, NGB8207N
, NGD15N41CL
, NGD18N40CLB
, IRG7R313U
, NGD8201N
, NGD8205N
, NGP15N41CL
, FID60-06D
, FII24N17AH1
, FII30-06D
, FII30-12E
, FII40-06D
.
