Справочник IGBT. NGD8201A

 

NGD8201A - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: NGD8201A

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 125

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 400

Напряжение насыщения коллектор-эмиттер (Ucesat): 1.3

Максимальный постоянный ток коллектора (Ic): 20

Корпус: DPAK-4

Аналог (замена) для NGD8201A

 

 

NGD8201A Datasheet (PDF)

1.1. ngd8201a.pdf Size:123K _igbt

NGD8201A
NGD8201A

NGD8201N, NGD8201AN Ignition IGBT 20 A, 400 V, N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http://onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 A

1.2. ngd8201a.pdf Size:123K _onsemi

NGD8201A
NGD8201A

NGD8201N, NGD8201AN Ignition IGBT 20 A, 400 V, N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http://onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 A

 3.1. ngd8201b.pdf Size:81K _igbt

NGD8201A
NGD8201A

NGD8201B Ignition IGBT, 20 A, 400 V N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses www.onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 AMPS, 400 VO

3.2. ngd8201bnt4g.pdf Size:81K _igbt

NGD8201A
NGD8201A

NGD8201B Ignition IGBT, 20 A, 400 V N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses www.onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 AMPS, 400 VO

 3.3. ngd8201b.pdf Size:81K _onsemi

NGD8201A
NGD8201A

NGD8201B Ignition IGBT, 20 A, 400 V N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses www.onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 AMPS, 400 VO

3.4. ngd8201bnt4g.pdf Size:81K _onsemi

NGD8201A
NGD8201A

NGD8201B Ignition IGBT, 20 A, 400 V N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses www.onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 AMPS, 400 VO

Другие IGBT... NGB8202N , NGB8204N , NGB8206A , NGB8206N , NGB8207AN , NGB8207N , NGD15N41CLT4 , NGD18N40CLB , IRG4PC50U , NGD8201N , NGD8205N , NGP15N41CL , FID60-06D , FII24N17AH1 , FII30-06D , FII30-12E , FII40-06D .

 

 
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