IXBF20N300 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXBF20N300 datasheet

..1. Size:197K ixys
ixbf20n300.pdf pdf_icon

High Voltage, High Gain VCES = 3000V IXBF20N300 BIMOSFETTM Monolithic IC110 = 14A Bipolar MOS Transistor VCE(sat) 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 3000 V 1 VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V 2 Isolated Tab 5 VGES Continuous 20 V VGEM Transient 30 V 1 = Ga

6.1. Size:229K ixys
ixbf20n360.pdf pdf_icon

Preliminary Technical Information High Voltage, VCES = 3600V IXBF20N360 High Frequency, IC110 = 18A BiMOSFETTM Monolithic VCE(sat) 3.4V Bipolar MOS Transistor (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3600 V VCGR TJ = 25 C to 150 C, RGE = 1M 3600 V 1 2 VGES Continuous 20 V Isolat

9.1. Size:196K ixys
ixbf28n300.pdf pdf_icon

Advance Technical Information High Voltage, High Gain VCES = 3000V IXBF28N300 BIMOSFETTM Monolithic IC90 = 28A Bipolar MOS Transistor VCE(sat) 2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3000 V VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V 1 2 VGEM Transient

9.2. Size:196K ixys
ixbf22n300.pdf pdf_icon

Advance Technical Information High Voltage, High Gain VCES = 3000V IXBF22N300 BIMOSFETTM Monolithic IC90 = 22A Bipolar MOS Transistor VCE(sat) 2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3000 V VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V 1 2 VGEM Transient

Otros transistores... IXA30PG1200DHGLB , IXA33IF1200HB , IXA37IF1200HJ , IXA40PG1200DHGLB , IXA45IF1200HB , IXA55I1200HJ , IXA60IF1200NA , IXBF12N300 , GT30F131 , IXBF32N300 , IXBF40N160 , IXBF42N300 , IXBF55N300 , IXBF9N160G , IXBH10N170 , IXBH12N300 , IXBH16N170 .