IXBF20N300 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXBF20N300
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 150 W
|Vce|ⓘ - Tensión máxima colector-emisor: 3000 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 34 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 210 nS
Coesⓘ - Capacitancia de salida, typ: 92 pF
Qgⓘ - Carga total de la puerta, typ: 105 nC
Paquete / Cubierta: ISOPLUS-I4-PAK
IXBF20N300 Datasheet (PDF)
ixbf20n300.pdf
High Voltage, High GainVCES = 3000VIXBF20N300BIMOSFETTM MonolithicIC110 = 14ABipolar MOS Transistor VCE(sat) 3.2V (Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 V1VCGR TJ = 25C to 150C, RGE = 1M 3000 V2Isolated Tab5VGES Continuous 20 VVGEM Transient 30 V1 = Ga
ixbf20n360.pdf
Preliminary Technical InformationHigh Voltage,VCES = 3600VIXBF20N360High Frequency,IC110 = 18ABiMOSFETTM MonolithicVCE(sat) 3.4VBipolar MOS Transistor(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3600 VVCGR TJ = 25C to 150C, RGE = 1M 3600 V12VGES Continuous 20 VIsolat
ixbf28n300.pdf
Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBF28N300BIMOSFETTM MonolithicIC90 = 28ABipolar MOS TransistorVCE(sat) 2.7V(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 V12VGEM Transient
ixbf22n300.pdf
Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBF22N300BIMOSFETTM MonolithicIC90 = 22ABipolar MOS TransistorVCE(sat) 2.7V(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 V12VGEM Transient
Otros transistores... IXA30PG1200DHGLB , IXA33IF1200HB , IXA37IF1200HJ , IXA40PG1200DHGLB , IXA45IF1200HB , IXA55I1200HJ , IXA60IF1200NA , IXBF12N300 , GT30F125 , IXBF32N300 , IXBF40N160 , IXBF42N300 , IXBF55N300 , IXBF9N160G , IXBH10N170 , IXBH12N300 , IXBH16N170 .
Liste
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