IXBF20N300 Specs and Replacement

Type Designator: IXBF20N300

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 150 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 3000 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 34 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃

tr ⓘ - Rise Time, typ: 210 nS

Coesⓘ - Output Capacitance, typ: 92 pF

Package: ISOPLUS-I4-PAK

 IXBF20N300 Substitution

- IGBTⓘ Cross-Reference Search

 

IXBF20N300 datasheet

 ..1. Size:197K  ixys
 ixbf20n300.pdf pdf_icon

IXBF20N300

High Voltage, High Gain VCES = 3000V IXBF20N300 BIMOSFETTM Monolithic IC110 = 14A Bipolar MOS Transistor VCE(sat) 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 3000 V 1 VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V 2 Isolated Tab 5 VGES Continuous 20 V VGEM Transient 30 V 1 = Ga... See More ⇒

 6.1. Size:229K  ixys
 ixbf20n360.pdf pdf_icon

IXBF20N300

Preliminary Technical Information High Voltage, VCES = 3600V IXBF20N360 High Frequency, IC110 = 18A BiMOSFETTM Monolithic VCE(sat) 3.4V Bipolar MOS Transistor (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3600 V VCGR TJ = 25 C to 150 C, RGE = 1M 3600 V 1 2 VGES Continuous 20 V Isolat... See More ⇒

 9.1. Size:196K  ixys
 ixbf28n300.pdf pdf_icon

IXBF20N300

Advance Technical Information High Voltage, High Gain VCES = 3000V IXBF28N300 BIMOSFETTM Monolithic IC90 = 28A Bipolar MOS Transistor VCE(sat) 2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3000 V VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V 1 2 VGEM Transient ... See More ⇒

 9.2. Size:196K  ixys
 ixbf22n300.pdf pdf_icon

IXBF20N300

Advance Technical Information High Voltage, High Gain VCES = 3000V IXBF22N300 BIMOSFETTM Monolithic IC90 = 22A Bipolar MOS Transistor VCE(sat) 2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3000 V VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V 1 2 VGEM Transient ... See More ⇒

SHOW MORE

Specs: IXA30PG1200DHGLB, IXA33IF1200HB, IXA37IF1200HJ, IXA40PG1200DHGLB, IXA45IF1200HB, IXA55I1200HJ, IXA60IF1200NA, IXBF12N300, GT30F131, IXBF32N300, IXBF40N160, IXBF42N300, IXBF55N300, IXBF9N160G, IXBH10N170, IXBH12N300, IXBH16N170

Keywords - IXBF20N300 transistor spec

 IXBF20N300 cross reference
 IXBF20N300 equivalent finder
 IXBF20N300 lookup
 IXBF20N300 substitution
 IXBF20N300 replacement