IXBH16N170A IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXBH16N170A

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 150 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1700 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 16 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 4.7 V @25℃

trⓘ - Tiempo de subida, typ: 25 nS

Coesⓘ - Capacitancia de salida, typ: 90 pF

Encapsulados: TO247

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IXBH16N170A datasheet

 ..1. Size:51K  ixys
 ixbh16n170a ixbt16n170a.pdf pdf_icon

IXBH16N170A

Advanced Technical Information High Voltage, High Gain IXBH 16N170A VCES = 1700 V BIMOSFETTM Monolithic IXBT 16N170A IC25 = 16 A Bipolar MOS Transistor VCE(sat) = 6.0 V tfi(typ) = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1700 V G E VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C1

 ..2. Size:50K  ixys
 ixbh16n170a.pdf pdf_icon

IXBH16N170A

Advanced Technical Information High Voltage, High Gain IXBH 16N170A VCES = 1700 V BIMOSFETTM Monolithic IXBT 16N170A IC25 = 16 A Bipolar MOS Transistor VCE(sat) = 6.0 V tfi(typ) = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1700 V G E VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C1

 4.1. Size:174K  ixys
 ixbh16n170.pdf pdf_icon

IXBH16N170A

High Voltage, High Gain VCES = 1700V IXBH16N170 BIMOSFETTM Monolithic IXBT16N170 IC90 = 16A Bipolar MOS Transistor VCE(sat) 3.3V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V G VGES Continuous 20 V C (TAB) C E VGEM Transient 30 V IC25 TC = 25 C 40 A TO-268 (IXBT

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 ixbh15n140 ixbh15n160.pdf pdf_icon

IXBH16N170A

High Voltage BIMOSFETTM IXBH 15N140 VCES = 1400/1600 V Monolithic Bipolar IXBH 15N160 IC25 = 15 A MOS Transistor VCE(sat) = 5.8 V typ. N-Channel, Enhancement Mode tfi = 40 ns C TO-247 AD G G C C (TAB) E E G = Gate, C = Collector, E = Emitter, TAB = Collector Symbol Conditions Maximum Ratings Features 15N140 15N160 International standard package VCES TJ = 25 C to 150 C 140

MOSTRAR MÁS

Otros transistores... IXBF32N300, IXBF40N160, IXBF42N300, IXBF55N300, IXBF9N160G, IXBH10N170, IXBH12N300, IXBH16N170, IHW40T60, IXBH20N300, IXBH24N170, IXBH28N170A, IXBH2N250, IXBH32N300, IXBH40N160, IXBH42N170, IXBH42N170A