IXBH16N170A Specs and Replacement
Type Designator: IXBH16N170A
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ -
Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 16 A @25℃
Tj ⓘ -
Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 4.7 V @25℃
tr ⓘ - Rise Time, typ: 25 nS
Coesⓘ - Output Capacitance, typ: 90 pF
Package: TO247
- IGBTⓘ Cross-Reference Search
IXBH16N170A datasheet
..1. Size:51K ixys
ixbh16n170a ixbt16n170a.pdf 
Advanced Technical Information High Voltage, High Gain IXBH 16N170A VCES = 1700 V BIMOSFETTM Monolithic IXBT 16N170A IC25 = 16 A Bipolar MOS Transistor VCE(sat) = 6.0 V tfi(typ) = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1700 V G E VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C1... See More ⇒
..2. Size:50K ixys
ixbh16n170a.pdf
Advanced Technical Information High Voltage, High Gain IXBH 16N170A VCES = 1700 V BIMOSFETTM Monolithic IXBT 16N170A IC25 = 16 A Bipolar MOS Transistor VCE(sat) = 6.0 V tfi(typ) = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1700 V G E VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C1... See More ⇒
4.1. Size:174K ixys
ixbh16n170.pdf
High Voltage, High Gain VCES = 1700V IXBH16N170 BIMOSFETTM Monolithic IXBT16N170 IC90 = 16A Bipolar MOS Transistor VCE(sat) 3.3V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V G VGES Continuous 20 V C (TAB) C E VGEM Transient 30 V IC25 TC = 25 C 40 A TO-268 (IXBT... See More ⇒
9.1. Size:68K 1
ixbh15n140 ixbh15n160.pdf
High Voltage BIMOSFETTM IXBH 15N140 VCES = 1400/1600 V Monolithic Bipolar IXBH 15N160 IC25 = 15 A MOS Transistor VCE(sat) = 5.8 V typ. N-Channel, Enhancement Mode tfi = 40 ns C TO-247 AD G G C C (TAB) E E G = Gate, C = Collector, E = Emitter, TAB = Collector Symbol Conditions Maximum Ratings Features 15N140 15N160 International standard package VCES TJ = 25 C to 150 C 140... See More ⇒
9.2. Size:155K 1
ixbh15n170 ixbt15n170.pdf
Advanced Technical Information VCES = 1700 V High Voltage, High Gain IXBH 15N170 BIMOSFETTM Monolithic IC25 = 25 A IXBT 15N170 Bipolar MOS Transistor VCE(sat) = 3.3 V Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E (TAB) VGEM Transient 30 V IC25 TC = 25 C25 A TO-24... See More ⇒
9.3. Size:157K ixys
ixbh10n300.pdf
Advance Technical Information High Voltage, High Gain VCES = 3000V IXBH10N300 BIMOSFETTM Monolithic IC110 = 10A Bipolar MOS Transistor VCE(sat) 3.2V TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 3000 V G C Tab VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V E VGES Continuous 20 V G = Gate C = Collector VGEM Transient 30... See More ⇒
9.4. Size:64K ixys
ixbh15n140-160.pdf
High Voltage BIMOSFETTM IXBH 15N140 VCES = 1400/1600 V Monolithic Bipolar IXBH 15N160 IC25 = 15 A MOS Transistor VCE(sat) = 5.8 V typ. N-Channel, Enhancement Mode tfi = 40 ns C TO-247 AD G G C C (TAB) E E G = Gate, C = Collector, E = Emitter, TAB = Collector Symbol Conditions Maximum Ratings Features 15N140 15N160 International standard package VCES TJ = 25 C to 150 C 140... See More ⇒
9.5. Size:486K ixys
ixbh10n170.pdf
VCES = 1700 V High Voltage, High Gain IXBH 10N170 BIMOSFETTM Monolithic IC25 = 20 A IXBT 10N170 Bipolar MOS Transistor VCE(sat) = 3.8 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E (TAB) VGEM Transient 30 V IC25 TC = 25 C20 A TO-247 AD (IX... See More ⇒
9.6. Size:596K ixys
ixbh10n170 ixbt10n170.pdf
VCES = 1700 V High Voltage, High Gain IXBH 10N170 BIMOSFETTM Monolithic IC25 = 20 A IXBT 10N170 Bipolar MOS Transistor VCE(sat) = 3.8 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E (TAB) VGEM Transient 30 V IC25 TC = 25 C20 A TO-247 AD (IX... See More ⇒
9.7. Size:176K ixys
ixbh12n300.pdf
High Voltage, High Gain VCES = 3000V IXBT12N300 BIMOSFETTM Monolithic IXBH12N300 IC110 = 12A Bipolar MOS Transistor VCE(sat) 3.2V TO-268 (IXBT) G Symbol Test Conditions Maximum Ratings E VCES TC = 25 C to 150 C 3000 V C (Tab) VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V TO-247 (IXBH) VGEM Transient 30 V IC25 TC = 25 C 30 A ... See More ⇒
9.8. Size:247K ixys
ixbh14n300hv.pdf
Advance Technical Information High Voltage, High Gain VCES = 3000V IXBA14N300HV BIMOSFETTM Monolithic IXBH14N300HV IC110 = 14A Bipolar MOS Transistor VCE(sat) 2.7V TO-263HV (IXBA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25 C to 150 C 3000 V TO-247HV (IXBH) VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V VGEM... See More ⇒
9.9. Size:271K ixys
ixbh10n300hv.pdf
Preliminary Technical Information High Voltage, High Gain VCES = 3000V IXBA10N300HV BIMOSFETTM Monolithic IXBH10N300HV IC110 = 10A Bipolar MOS Transistor VCE(sat) 2.8V TO-263HV (IXBA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25 C to 150 C 3000 V TO-247HV (IXBH) VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V ... See More ⇒
Specs: IXBF32N300, IXBF40N160, IXBF42N300, IXBF55N300, IXBF9N160G, IXBH10N170, IXBH12N300, IXBH16N170, IHW40T60, IXBH20N300, IXBH24N170, IXBH28N170A, IXBH2N250, IXBH32N300, IXBH40N160, IXBH42N170, IXBH42N170A
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