IXBH42N170A IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXBH42N170A

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 350 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1700 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 42 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 4.5 V @25℃

trⓘ - Tiempo de subida, typ: 35 nS

Coesⓘ - Capacitancia de salida, typ: 170 pF

Encapsulados: TO247

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IXBH42N170A datasheet

 ..1. Size:116K  ixys
 ixbh42n170a.pdf pdf_icon

IXBH42N170A

Advance Technical Information BIMOSFETTM Monolithic IXBH 42N170A VCES = 1700 V Bipolar MOS Transistor IXBT 42N170A IC25 = 42 A VCE(sat) = 6.0 V tfi = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E (TAB) VGEM Transient 30 V IC25 TC = 25 C42 A TO-247 AD (IXBH)

 ..2. Size:117K  ixys
 ixbh42n170a ixbt42n170a.pdf pdf_icon

IXBH42N170A

Advance Technical Information BIMOSFETTM Monolithic IXBH 42N170A VCES = 1700 V Bipolar MOS Transistor IXBT 42N170A IC25 = 42 A VCE(sat) = 6.0 V tfi = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E (TAB) VGEM Transient 30 V IC25 TC = 25 C42 A TO-247 AD (IXBH)

 4.1. Size:175K  ixys
 ixbh42n170 ixbt42n170.pdf pdf_icon

IXBH42N170A

High Voltage, High Gain VCES = 1700V IXBH42N170 BIMOSFETTM Monolithic IXBT42N170 IC90 = 42A Bipolar MOS Transistor VCE(sat) 2.8V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V VGES Continuous 20 V G VGEM Transient 30 V C (TAB) C E IC25 TC = 25 C 80 A ILRMS Termin

 4.2. Size:173K  ixys
 ixbh42n170.pdf pdf_icon

IXBH42N170A

High Voltage, High Gain VCES = 1700V IXBH42N170 BIMOSFETTM Monolithic IXBT42N170 IC90 = 42A Bipolar MOS Transistor VCE(sat) 2.8V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V VGES Continuous 20 V G VGEM Transient 30 V C (TAB) C E IC25 TC = 25 C 80 A ILRMS Termin

MOSTRAR MÁS

Otros transistores... IXBH16N170A, IXBH20N300, IXBH24N170, IXBH28N170A, IXBH2N250, IXBH32N300, IXBH40N160, IXBH42N170, RJH60F5DPQ-A0, IXBH5N160G, IXBH6N170, IXBH9N160G, IXBK55N300, IXBK64N250, IXBK75N170, IXBK75N170A, IXBL64N250