All IGBT. IXBH42N170A Datasheet

 

IXBH42N170A Datasheet and Replacement


   Type Designator: IXBH42N170A
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 350 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 42 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 35 nS
   Coesⓘ - Output Capacitance, typ: 170 pF
   Qg ⓘ - Total Gate Charge, typ: 155 nC
   Package: TO247
 

 IXBH42N170A substitution

   - IGBT ⓘ Cross-Reference Search

 

IXBH42N170A Datasheet (PDF)

 ..1. Size:116K  ixys
 ixbh42n170a.pdf pdf_icon

IXBH42N170A

Advance Technical InformationBIMOSFETTM MonolithicIXBH 42N170A VCES = 1700 VBipolar MOS TransistorIXBT 42N170A IC25 = 42 AVCE(sat) = 6.0 Vtfi = 50 nsSymbol Test Conditions Maximum Ratings TO-268 (IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VE(TAB)VGEM Transient 30 VIC25 TC = 25C42 ATO-247 AD (IXBH)

 ..2. Size:117K  ixys
 ixbh42n170a ixbt42n170a.pdf pdf_icon

IXBH42N170A

Advance Technical InformationBIMOSFETTM MonolithicIXBH 42N170A VCES = 1700 VBipolar MOS TransistorIXBT 42N170A IC25 = 42 AVCE(sat) = 6.0 Vtfi = 50 nsSymbol Test Conditions Maximum Ratings TO-268 (IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VE(TAB)VGEM Transient 30 VIC25 TC = 25C42 ATO-247 AD (IXBH)

 4.1. Size:175K  ixys
 ixbh42n170 ixbt42n170.pdf pdf_icon

IXBH42N170A

High Voltage, High GainVCES = 1700VIXBH42N170BIMOSFETTM MonolithicIXBT42N170IC90 = 42ABipolar MOS TransistorVCE(sat) 2.8VTO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VVGES Continuous 20 VGVGEM Transient 30 VC (TAB)CEIC25 TC = 25C 80 AILRMS Termin

 4.2. Size:173K  ixys
 ixbh42n170.pdf pdf_icon

IXBH42N170A

High Voltage, High GainVCES = 1700VIXBH42N170BIMOSFETTM MonolithicIXBT42N170IC90 = 42ABipolar MOS TransistorVCE(sat) 2.8VTO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VVGES Continuous 20 VGVGEM Transient 30 VC (TAB)CEIC25 TC = 25C 80 AILRMS Termin

SHOW MORE

Datasheet: IXBH16N170A , IXBH20N300 , IXBH24N170 , IXBH28N170A , IXBH2N250 , IXBH32N300 , IXBH40N160 , IXBH42N170 , GT30J122 , IXBH5N160G , IXBH6N170 , IXBH9N160G , IXBK55N300 , IXBK64N250 , IXBK75N170 , IXBK75N170A , IXBL64N250 .

Keywords - IXBH42N170A transistor datasheet

 IXBH42N170A cross reference
 IXBH42N170A equivalent finder
 IXBH42N170A lookup
 IXBH42N170A substitution
 IXBH42N170A replacement

 

 
Back to Top

 


 
.