IXBT10N170 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXBT10N170
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 140 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.4 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 28 nS
Coesⓘ - Capacitancia de salida, typ: 40 pF
Qgⓘ - Carga total de la puerta, typ: 30 nC
Paquete / Cubierta: TO268
- Selección de transistores por parámetros
IXBT10N170 Datasheet (PDF)
ixbt10n170.pdf
VCES = 1700 VHigh Voltage, High GainIXBH 10N170BIMOSFETTM Monolithic IC25 = 20 AIXBT 10N170Bipolar MOS TransistorVCE(sat) = 3.8 VPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-268 (IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VE(TAB)VGEM Transient 30 VIC25 TC = 25C20 ATO-247 AD (IX
ixbh10n170 ixbt10n170.pdf
VCES = 1700 VHigh Voltage, High GainIXBH 10N170BIMOSFETTM Monolithic IC25 = 20 AIXBT 10N170Bipolar MOS TransistorVCE(sat) = 3.8 VPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-268 (IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VE(TAB)VGEM Transient 30 VIC25 TC = 25C20 ATO-247 AD (IX
ixbh15n170 ixbt15n170.pdf
Advanced Technical InformationVCES = 1700 VHigh Voltage, High GainIXBH 15N170BIMOSFETTM Monolithic IC25 = 25 AIXBT 15N170Bipolar MOS TransistorVCE(sat) = 3.3 VSymbol Test Conditions Maximum Ratings TO-268 (IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VE(TAB)VGEM Transient 30 VIC25 TC = 25C25 ATO-24
ixbt12n300.pdf
High Voltage, High GainVCES = 3000VIXBT12N300BIMOSFETTM MonolithicIXBH12N300IC110 = 12ABipolar MOS TransistorVCE(sat) 3.2VTO-268 (IXBT)GSymbol Test Conditions Maximum RatingsEVCES TC = 25C to 150C 3000 VC (Tab)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 VTO-247 (IXBH)VGEM Transient 30 VIC25 TC = 25C 30 A
Otros transistores... IXBK75N170 , IXBK75N170A , IXBL64N250 , IXBN42N170A , IXBN75N170 , IXBN75N170A , IXBP5N160G , IXBR42N170 , GT60N321 , IXBT12N300 , IXBT16N170 , IXBT16N170A , IXBT20N300 , IXBT24N170 , IXBT28N170A , IXBT2N250 , IXBT32N300 .
History: MG12150D-BA1MM | MII200-12A4 | IRGP4790 | IXBF28N300 | GT15J103 | 2MBI75L-120
History: MG12150D-BA1MM | MII200-12A4 | IRGP4790 | IXBF28N300 | GT15J103 | 2MBI75L-120
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