All IGBT. IXBT10N170 Datasheet

 

IXBT10N170 Datasheet and Replacement


   Type Designator: IXBT10N170
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 140 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.4 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 28 nS
   Coesⓘ - Output Capacitance, typ: 40 pF
   Qgⓘ - Total Gate Charge, typ: 30 nC
   Package: TO268
      - IGBT Cross-Reference

 

IXBT10N170 Datasheet (PDF)

 ..1. Size:486K  ixys
 ixbt10n170.pdf pdf_icon

IXBT10N170

VCES = 1700 VHigh Voltage, High GainIXBH 10N170BIMOSFETTM Monolithic IC25 = 20 AIXBT 10N170Bipolar MOS TransistorVCE(sat) = 3.8 VPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-268 (IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VE(TAB)VGEM Transient 30 VIC25 TC = 25C20 ATO-247 AD (IX

 ..2. Size:596K  ixys
 ixbh10n170 ixbt10n170.pdf pdf_icon

IXBT10N170

VCES = 1700 VHigh Voltage, High GainIXBH 10N170BIMOSFETTM Monolithic IC25 = 20 AIXBT 10N170Bipolar MOS TransistorVCE(sat) = 3.8 VPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-268 (IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VE(TAB)VGEM Transient 30 VIC25 TC = 25C20 ATO-247 AD (IX

 9.1. Size:155K  1
 ixbh15n170 ixbt15n170.pdf pdf_icon

IXBT10N170

Advanced Technical InformationVCES = 1700 VHigh Voltage, High GainIXBH 15N170BIMOSFETTM Monolithic IC25 = 25 AIXBT 15N170Bipolar MOS TransistorVCE(sat) = 3.3 VSymbol Test Conditions Maximum Ratings TO-268 (IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VE(TAB)VGEM Transient 30 VIC25 TC = 25C25 ATO-24

 9.2. Size:176K  ixys
 ixbt12n300.pdf pdf_icon

IXBT10N170

High Voltage, High GainVCES = 3000VIXBT12N300BIMOSFETTM MonolithicIXBH12N300IC110 = 12ABipolar MOS TransistorVCE(sat) 3.2VTO-268 (IXBT)GSymbol Test Conditions Maximum RatingsEVCES TC = 25C to 150C 3000 VC (Tab)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 VTO-247 (IXBH)VGEM Transient 30 VIC25 TC = 25C 30 A

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Datasheet: IXBK75N170 , IXBK75N170A , IXBL64N250 , IXBN42N170A , IXBN75N170 , IXBN75N170A , IXBP5N160G , IXBR42N170 , GT60N321 , IXBT12N300 , IXBT16N170 , IXBT16N170A , IXBT20N300 , IXBT24N170 , IXBT28N170A , IXBT2N250 , IXBT32N300 .

History: SPT25N120F1A1T8TL

Keywords - IXBT10N170 transistor datasheet

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