IXBT28N170A IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXBT28N170A

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 300 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1700 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 4.7 V @25℃

trⓘ - Tiempo de subida, typ: 36 nS

Coesⓘ - Capacitancia de salida, typ: 132 pF

Encapsulados: TO268

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IXBT28N170A datasheet

 ..1. Size:69K  ixys
 ixbh28n170a ixbt28n170a.pdf pdf_icon

IXBT28N170A

ADVANCE TECHNICAL INFORMATION VCES = 1700 V High Voltage, High Gain IXBH 28N170A BIMOSFETTM Monolithic IC25 = 30 A IXBT 28N170A Bipolar MOS Transistor VCE(sat) = 6.0 V tfi = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E (TAB) VGEM Transient 30 V IC25 TC = 25

 9.1. Size:180K  ixys
 ixbt2n250.pdf pdf_icon

IXBT28N170A

Advance Technical Information High Voltage, High Gain VCES = 2500V IXBH2N250 BIMOSFETTM IXBT2N250 IC110 = 2A VCE(sat) 3.50V Monolithic Bipolar MOS Transistor TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 2500 V VCGR TJ = 25 C to 150 C, RGE = 1M 2500 V G C (TAB) C VGES Continuous 20 V E VGEM Transient 30 V IC

 9.2. Size:174K  ixys
 ixbt20n300.pdf pdf_icon

IXBT28N170A

Preliminary Technical Information High Voltage, High Gain VCES = 3000V IXBH20N300 BIMOSFETTM Monolithic IXBT20N300 IC110 = 20A Bipolar MOS Transistor VCE(sat) 3.2V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 3000 V G C (TAB) VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V C E VGES Continuous 20 V VGEM Transient 30 V

 9.3. Size:198K  ixys
 ixbt20n300hv.pdf pdf_icon

IXBT28N170A

Advance Technical Information High Voltage, High Gain IXBT20N300HV VCES = 3000V BIMOSFETTM Monolithic IC110 = 20A Bipolar MOS Transistor VCE(sat) 3.2V TO-268 Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 3000 V G VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V E VGES Continuous 20 V C (Tab) VGEM Transient 30 V IC25 TC = 25 C 50 A G

MOSTRAR MÁS

Otros transistores... IXBP5N160G, IXBR42N170, IXBT10N170, IXBT12N300, IXBT16N170, IXBT16N170A, IXBT20N300, IXBT24N170, IRG7S313U, IXBT2N250, IXBT32N300, IXBT42N170, IXBT42N170A, IXBT6N170, IXBX25N250, IXBX55N300, IXBX64N250