All IGBT. IXBT28N170A Datasheet

 

IXBT28N170A Datasheet and Replacement


   Type Designator: IXBT28N170A
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.7 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 36 nS
   Coesⓘ - Output Capacitance, typ: 132 pF
   Package: TO268
      - IGBT Cross-Reference

 

IXBT28N170A Datasheet (PDF)

 ..1. Size:69K  ixys
 ixbh28n170a ixbt28n170a.pdf pdf_icon

IXBT28N170A

ADVANCE TECHNICAL INFORMATIONVCES = 1700 VHigh Voltage, High GainIXBH 28N170ABIMOSFETTM Monolithic IC25 = 30 AIXBT 28N170ABipolar MOS TransistorVCE(sat) = 6.0 Vtfi = 50 nsSymbol Test Conditions Maximum Ratings TO-268 (IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VE(TAB)VGEM Transient 30 VIC25 TC = 25

 9.1. Size:180K  ixys
 ixbt2n250.pdf pdf_icon

IXBT28N170A

Advance Technical InformationHigh Voltage, High GainVCES = 2500VIXBH2N250BIMOSFETTMIXBT2N250IC110 = 2AVCE(sat) 3.50VMonolithic Bipolar MOSTransistor TO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 2500 VVCGR TJ = 25C to 150C, RGE = 1M 2500 VGC (TAB)CVGES Continuous 20 VEVGEM Transient 30 VIC

 9.2. Size:174K  ixys
 ixbt20n300.pdf pdf_icon

IXBT28N170A

Preliminary Technical InformationHigh Voltage, High GainVCES = 3000VIXBH20N300BIMOSFETTM MonolithicIXBT20N300IC110 = 20ABipolar MOS TransistorVCE(sat) 3.2VTO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 VGC (TAB)VCGR TJ = 25C to 150C, RGE = 1M 3000 VCEVGES Continuous 20 VVGEM Transient 30 V

 9.3. Size:198K  ixys
 ixbt20n300hv.pdf pdf_icon

IXBT28N170A

Advance Technical InformationHigh Voltage, High GainIXBT20N300HV VCES = 3000VBIMOSFETTM MonolithicIC110 = 20ABipolar MOS TransistorVCE(sat) 3.2VTO-268Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 VGVCGR TJ = 25C to 150C, RGE = 1M 3000 VEVGES Continuous 20 V C (Tab)VGEM Transient 30 VIC25 TC = 25C 50 A G

SHOW MORE

Datasheet: IXBP5N160G , IXBR42N170 , IXBT10N170 , IXBT12N300 , IXBT16N170 , IXBT16N170A , IXBT20N300 , IXBT24N170 , FGPF4533 , IXBT2N250 , IXBT32N300 , IXBT42N170 , IXBT42N170A , IXBT6N170 , IXBX25N250 , IXBX55N300 , IXBX64N250 .

History: DIM600DDM17-A

Keywords - IXBT28N170A transistor datasheet

 IXBT28N170A cross reference
 IXBT28N170A equivalent finder
 IXBT28N170A lookup
 IXBT28N170A substitution
 IXBT28N170A replacement

 

 
Back to Top

 


 
.