IXBT2N250 Todos los transistores

 

IXBT2N250 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXBT2N250
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 32 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 2500 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 5 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.15 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 180 nS
   Coesⓘ - Capacitancia de salida, typ: 8.7 pF
   Qgⓘ - Carga total de la puerta, typ: 10.6 nC
   Paquete / Cubierta: TO268
     - Selección de transistores por parámetros

 

IXBT2N250 Datasheet (PDF)

 ..1. Size:180K  ixys
 ixbt2n250.pdf pdf_icon

IXBT2N250

Advance Technical InformationHigh Voltage, High GainVCES = 2500VIXBH2N250BIMOSFETTMIXBT2N250IC110 = 2AVCE(sat) 3.50VMonolithic Bipolar MOSTransistor TO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 2500 VVCGR TJ = 25C to 150C, RGE = 1M 2500 VGC (TAB)CVGES Continuous 20 VEVGEM Transient 30 VIC

 9.1. Size:174K  ixys
 ixbt20n300.pdf pdf_icon

IXBT2N250

Preliminary Technical InformationHigh Voltage, High GainVCES = 3000VIXBH20N300BIMOSFETTM MonolithicIXBT20N300IC110 = 20ABipolar MOS TransistorVCE(sat) 3.2VTO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 VGC (TAB)VCGR TJ = 25C to 150C, RGE = 1M 3000 VCEVGES Continuous 20 VVGEM Transient 30 V

 9.2. Size:198K  ixys
 ixbt20n300hv.pdf pdf_icon

IXBT2N250

Advance Technical InformationHigh Voltage, High GainIXBT20N300HV VCES = 3000VBIMOSFETTM MonolithicIC110 = 20ABipolar MOS TransistorVCE(sat) 3.2VTO-268Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 VGVCGR TJ = 25C to 150C, RGE = 1M 3000 VEVGES Continuous 20 V C (Tab)VGEM Transient 30 VIC25 TC = 25C 50 A G

 9.3. Size:288K  ixys
 ixbt20n360hv.pdf pdf_icon

IXBT2N250

Advance Technical InformationHigh Voltage, High GainVCES = 3600VIXBT20N360HVBIMOSFETTM MonolithicIXBH20N360HVIC110 = 20ABipolar MOS TransistorVCE(sat) 3.4VTO-268HV (IXBT)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 3600 V E C (Tab)VCGR TJ = 25C to 150C, RGE = 1M 3600 VVGES Continuous 20 VTO-247HV (IXBH)VGEM

MOSTRAR MÁS

Otros transistores... IXBR42N170 , IXBT10N170 , IXBT12N300 , IXBT16N170 , IXBT16N170A , IXBT20N300 , IXBT24N170 , IXBT28N170A , FGW75N60HD , IXBT32N300 , IXBT42N170 , IXBT42N170A , IXBT6N170 , IXBX25N250 , IXBX55N300 , IXBX64N250 , IXBX75N170 .

History: SGTP40V60FD2PU | KGT15N120NDS | NGTB15N135IHRWG | VS-GB50NA120UX | MIAA20WE600TMH | XNF6N60T | BSM150GAL120DLC

 

 
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