CT20VSL-8 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CT20VSL-8
Tipo de transistor: IGBT
Polaridad de transistor: N
|Vce|ⓘ - Tensión máxima colector-emisor: 400 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 15 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 130(pulse) A
Tjⓘ - Temperatura máxima de unión: 150 ℃
Paquete / Cubierta: TO220S
- Selección de transistores por parámetros
CT20VSL-8 Datasheet (PDF)
ct20vsl-8.pdf

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTORCT20VSL-8STROBE FLASHER USECT20VSL-8 OUTLINE DRAWING Dimensions in mmr 10.5MAX. 4.51.3+0.30 0150.50.8q w ewrq GATEq w COLLECTORe EMITTERr COLLECTOReVCES ............................................................................... 400VICM .................................................................
ct20vs-8.pdf

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTORCT20VS-8STROBE FLASHER USECT20VS-8 OUTLINE DRAWING Dimensions in mmr 10.5MAX. 4.51.3+0.30 0150.50.8q w ewrq GATEq w COLLECTORe EMITTERr COLLECTOReVCES ............................................................................... 400VICM ...................................................................
Otros transistores... CT15SM-24 , CT20AS-8 , CT20ASJ-8 , CT20ASL-8 , CT20TM-8 , CT20VM-8 , CT20VML-8 , CT20VS-8 , GT30J127 , CT25AS-8 , CT25ASJ-8 , CT30SM-12 , CT30TM-8 , CT30VM-8 , CT30VS-8 , CT35SM-8 , CT40TMH-8 .
History: AOK40B65H2AL | APTGT50X170BTP3 | MMG200DR120B | IXGT30N60C3D1 | DM2G50SH12A | RJH1CM5DPQ-E0
History: AOK40B65H2AL | APTGT50X170BTP3 | MMG200DR120B | IXGT30N60C3D1 | DM2G50SH12A | RJH1CM5DPQ-E0



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