IXDR30N120 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXDR30N120
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 200 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.4 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 70 nS
Coesⓘ - Capacitancia de salida, typ: 250 pF
Paquete / Cubierta: ISOPLUS247
Búsqueda de reemplazo de IXDR30N120 IGBT
IXDR30N120 Datasheet (PDF)
ixdr30n120.pdf
IXDR 30N120 D1IXDR 30N120VCES = 1200 VHigh Voltage IGBTIC25 = 50 Awith optional DiodeVCE(sat) typ = 2.4 VISOPLUSTM package(Electrically Isolated Back Side)C CISOPLUS 247TMShort Circuit SOA Capability E153432Square RBSOAG GGCEE EIsolated Backside*IXDR 30N120 IXDR 30N120 D1G = Gate C = Collector E = EmitterSymbol Conditions Maximum Ratings Features
ixdr30n120d1.pdf
IXDR 30N120 D1IXDR 30N120VCES = 1200 VHigh Voltage IGBTIC25 = 50 Awith optional DiodeVCE(sat) typ = 2.4 VISOPLUSTM package(Electrically Isolated Back Side)C CISOPLUS 247TMShort Circuit SOA Capability E153432Square RBSOAG GGCEE EIsolated Backside*IXDR 30N120 IXDR 30N120 D1G = Gate C = Collector E = EmitterSymbol Conditions Maximum Ratings Features
ixdr35n60bd1.pdf
IXDR 35N60 BD1VCES = 600 VIGBTIC25 = 38 Awith optional DiodeVCE(sat) typ= 2.2 VHigh Speed,Low Saturation VoltageCISOPLUS 247TMGGCEIsolated back surfaceEG = Gate, E = EmitterC = Collector , TAB = CollectorSymbol Conditions Maximum Ratings FeaturesNPT IGBT technologyVCES TJ = 25C to 150C 600 Vlow switching lossesVCGR TJ = 25C to 150C;
Otros transistores... IXBX64N250 , IXBX75N170 , IXBX75N170A , IXDH35N60B , IXDH35N60BD1 , IXDP20N60B , IXDP20N60BD1 , IXDP35N60B , GT30J127 , IXDR30N120D1 , IXDR35N60BD1 , IXEH25N120 , IXEH25N120D1 , IXEH40N120 , IXEH40N120D1 , IXEL40N400 , IXEN60N120 .
History: SGW23N60UF
History: SGW23N60UF
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
2n2613 | c2166 transistor | 2sd330 | 20n60 | ksa1013 | mje15032g datasheet | 2sc2166 | 2sc5198