IXGA14N120B IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGA14N120B

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 150 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 28 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7 V @25℃

|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V

trⓘ - Tiempo de subida, typ: 30 nS

Coesⓘ - Capacitancia de salida, typ: 36 pF

Qgⓘ - Carga total de la puerta, typ: 30 nC

Encapsulados: TO263

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IXGA14N120B datasheet

 ..1. Size:151K  ixys
ixga14n120b ixgp14n120b.pdf pdf_icon

IXGA14N120B

IXGA 14N120B VCES = 1200 V IGBT IXGP 14N120B IC25 = 28 A Optimized for VCE(sat) = 3.3 V switching up to 35 KHz Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V TO-220AB (IXGP) VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V VGEM Transient 30 V G C E IC25 TC = 25 C28 A IC110 TC = 110 C14 A ICM TC = 25 C,

 9.1. Size:70K  ixys
ixga12n60cd1 ixgp12n60cd1.pdf pdf_icon

IXGA14N120B

IXGA 12N60CD1 HiPerFASTTM IGBT VCES = 600 V IXGP 12N60CD1 LightspeedTM Series IC25 = 24 A VCE(sat) = 2.7 V tfi(typ) = 55 ns Symbol Test Conditions Maximum Ratings TO-263 (IXGA) VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V E C (TAB) VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C24 A IC90 TC = 90 C12 A TO-220 AB ICM TC = 25 C,

 9.2. Size:71K  ixys
ixga12n60b ixgp12n60b.pdf pdf_icon

IXGA14N120B

IXGA 12N60B VCES = 600 V HiPerFASTTM IGBT IXGP 12N60B IC25 = 24 A VCE(sat) = 2.1 V tfi(typ) = 120 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-220 AB (IXGP) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G E VGEM Transient 30 V IC25 TC = 25 C24 A IC90 TC = 90 C12 A TO-263 AA (IXGA) ICM TC =

 9.3. Size:214K  ixys
ixga16n60b2d1.pdf pdf_icon

IXGA14N120B

HiPerFASTTM IGBTs VCES = 600V IXGA16N60B2D1 B2-Class High Speed IC110 = 16A IXGP16N60B2D1 w/ Diode VCE(sat) 2.3V IXGH16N60B2D1 tfi(typ) = 70ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G C C (

Otros transistores... IXEN60N120D1, IXER20N120, IXER20N120D1, IXER35N120D1, IXER60N120, IXGA12N120A2, IXGA12N120A3, IXGA12N60B, SGT60N60FD1P7, IXGA15N120B2, IXGA16N60B2, IXGA16N60B2D1, IXGA16N60C2, IXGA16N60C2D1, IXGA20N100A3, IXGA20N120, IXGA20N120A3