IXGA15N120B2 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGA15N120B2

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 170 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.5(max) V @25℃

|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V

trⓘ - Tiempo de subida, typ: 15 nS

Coesⓘ - Capacitancia de salida, typ: 95 pF

Qgⓘ - Carga total de la puerta, typ: 86 nC

Encapsulados: TO263

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IXGA15N120B2 datasheet

 ..1. Size:63K  ixys
 ixga15n120b2 ixgp15n120b2.pdf pdf_icon

IXGA15N120B2

VCES =1200 V IXGA 15N120B2 HiPerFASTTM IGBT IC25 = 30 A IXGP 15N120B2 VCE(sat) = 3.5 V Optimized for 10-25 KHz hard tfi(typ) = 137 ns switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V VGEM Transient 30 V G C E IC25 TC = 2

 3.1. Size:51K  ixys
 ixga15n120b ixgp15n120b.pdf pdf_icon

IXGA15N120B2

IXGA 15N120B VCES = 1200 V HiPerFASTTM IGBT IXGP 15N120B IC25 = 30 A VCE(sat) = 3.2 V tfi(typ) = 160 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V VGES Continuous 20 V VGEM Transient 30 V G C E IC25 TC = 25 C30 A IC90 TC = 90 C15 A ICM TC = 25 C, 1 ms 60 A TO-263 AA

 4.1. Size:576K  ixys
 ixga15n120c ixgp15n120c.pdf pdf_icon

IXGA15N120B2

VCES =1200 V IXGA 15N120C IGBT IC25 = 30 A IXGP 15N120C VCE(sat) = 3.8 V Lightspeed Series tfi(typ) = 115 ns Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V VGEM Transient 30 V G C E IC25 TC = 25 C30 A IC90 TC = 90 C15 A ICM TC = 25 C, 1 ms 60 A TO-263 AA (IXGA)

 6.1. Size:98K  ixys
 ixga15n100c ixgp15n100c.pdf pdf_icon

IXGA15N120B2

VCES =1000 V IXGA 15N100C IGBT IC25 = 30 A IXGP 15N100C VCE(sat) = 3.5 V Lightspeed Series tfi(typ) = 115 ns Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1000 V TO-220AB (IXGP) VCGR TJ = 25 C to 150 C; RGE = 1 M 1000 V VGES Continuous 20 V VGEM Transient 30 V G C E IC25 TC = 25 C30 A IC90 TC = 90 C15 A ICM TC = 25 C, 1 ms 60 A TO-263 AA (IXGA)

MOSTRAR MÁS

Otros transistores... IXER20N120, IXER20N120D1, IXER35N120D1, IXER60N120, IXGA12N120A2, IXGA12N120A3, IXGA12N60B, IXGA14N120B, IKW75N60T, IXGA16N60B2, IXGA16N60B2D1, IXGA16N60C2, IXGA16N60C2D1, IXGA20N100A3, IXGA20N120, IXGA20N120A3, IXGA20N120B3