CT30VM-8 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CT30VM-8  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

|Vce|ⓘ - Tensión máxima colector-emisor: 400 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 180(pulse) A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

Encapsulados: TO220C

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CT30VM-8 datasheet

 ..1. Size:28K  mitsubishi
 ct30vm-8.pdf pdf_icon

CT30VM-8

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT30VM-8 STROBE FLASHER USE CT30VM-8 OUTLINE DRAWING Dimensions in mm 10.5MAX. r 1.3 1 0.5 0.5 2.5 2.5 q w e wr q GATE q w COLLECTOR e EMITTER r COLLECTOR VCES ................................................................................400V e ICM ...............................................................................

 9.1. Size:28K  mitsubishi
 ct30vs-8.pdf pdf_icon

CT30VM-8

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT30VS-8 STROBE FLASHER USE CT30VS-8 OUTLINE DRAWING Dimensions in mm r 10.5MAX. 4.5 1.3 +0.3 0 0 1 5 0.5 0.8 q w e wr q GATE q w COLLECTOR e EMITTER r COLLECTOR e VCES ............................................................................... 400V ICM ...................................................................

Otros transistores... CT20VM-8, CT20VML-8, CT20VS-8, CT20VSL-8, CT25AS-8, CT25ASJ-8, CT30SM-12, CT30TM-8, CRG40T60AK3HD, CT30VS-8, CT35SM-8, CT40TMH-8, CT60AM-18B, CT60AM-18F, CT60AM-20, CT75AM-12, CY20AAJ-8