IXGF20N250 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGF20N250

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 100 W

|Vce|ⓘ - Tensión máxima colector-emisor: 2500 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 23 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.1(max) V @25℃

trⓘ - Tiempo de subida, typ: 160 nS

Coesⓘ - Capacitancia de salida, typ: 53 pF

Encapsulados: ISOPLUS-I4-PAK

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IXGF20N250 datasheet

 ..1. Size:192K  ixys
 ixgf20n250.pdf pdf_icon

IXGF20N250

High Voltage IGBT VCES = 2500V IXGF20N250 For Capacitor Discharge IC25 = 23A Applications VCE(sat) 3.1V ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 2500 V VCGR TJ = 25 C to 150 C, RGE = 1M 2500 V VGES Continuous 20 V 1 2 VGEM Transient 30 V Isolated Tab 5 IC25 TC = 25 C 23 A 1

 7.1. Size:189K  ixys
 ixgf20n300.pdf pdf_icon

IXGF20N250

VCES = 3000V High Voltage IGBT IXGF20N300 For Capacitor Discharge IC25 = 22A Applications VCE(sat) 3.2V ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3000 V VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V 1 2 VGES Continuous 20 V Isolated Tab 5 VGEM Transient 30 V IC25 TC = 25 C 22 A 1

 9.1. Size:112K  ixys
 ixgf25n300.pdf pdf_icon

IXGF20N250

VCES = 3000V High Voltage IGBT IXGF25N300 For Capacitor Discharge IC25 = 27A Applications VCE(sat) 3.0V ( Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings ISOPLUS i4-PakTM VCES TJ = 25 C to 150 C 3000 V VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V 1 2 VGEM Transient 30 V Isolated Tab 5 IC25 TC = 25 C 27 A I

 9.2. Size:221K  ixys
 ixgf25n250.pdf pdf_icon

IXGF20N250

VCES = 2500V High Voltage IGBT IXGF25N250 IC25 = 30A For Capacitor Discharge Applications VCE(sat) 2.9V ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 2500 V 1 2 VCGR TJ = 25 C to 150 C, RGE = 1M 2500 V 5 VGES Continuous 20 V ISOLATED TAB VGEM Transient 30 V 1 = Gate 5 = Collector

MOSTRAR MÁS

Otros transistores... IXGA4N100, IXGA50N60B4, IXGA50N60C4, IXGA7N60BD1, IXGA7N60CD1, IXGB200N60B3, IXGB75N60BD1, IXGE200N60B, RJH60F7BDPQ-A0, IXGF20N300, IXGF25N250, IXGF25N300, IXGF30N400, IXGF32N170, IXGF36N300, IXGH100N30B3, IXGH100N30C3