IXGF25N250 Todos los transistores

 

IXGF25N250 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXGF25N250
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 114 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 2500 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.9(max) V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 233 nS
   Coesⓘ - Capacitancia de salida, typ: 98 pF
   Paquete / Cubierta: ISOPLUS-I4-PAK
     - Selección de transistores por parámetros

 

IXGF25N250 Datasheet (PDF)

 ..1. Size:221K  ixys
ixgf25n250.pdf pdf_icon

IXGF25N250

VCES = 2500VHigh Voltage IGBT IXGF25N250IC25 = 30AFor Capacitor DischargeApplicationsVCE(sat) 2.9V( Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 2500 V12VCGR TJ = 25C to 150C, RGE = 1M 2500 V5VGES Continuous 20 VISOLATED TABVGEM Transient 30 V1 = Gate 5 = Collector

 7.1. Size:112K  ixys
ixgf25n300.pdf pdf_icon

IXGF25N250

VCES = 3000VHigh Voltage IGBT IXGF25N300For Capacitor Discharge IC25 = 27AApplications VCE(sat) 3.0V ( Electrically Isolated Tab)Symbol Test Conditions Maximum Ratings ISOPLUS i4-PakTMVCES TJ = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 V12VGEM Transient 30 VIsolated Tab5IC25 TC = 25C 27 AI

 9.1. Size:189K  ixys
ixgf20n300.pdf pdf_icon

IXGF25N250

VCES = 3000VHigh Voltage IGBT IXGF20N300For Capacitor DischargeIC25 = 22AApplicationsVCE(sat) 3.2V( Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 V12VGES Continuous 20 VIsolated Tab5VGEM Transient 30 VIC25 TC = 25C 22 A1

 9.2. Size:192K  ixys
ixgf20n250.pdf pdf_icon

IXGF25N250

High Voltage IGBT VCES = 2500VIXGF20N250For Capacitor DischargeIC25 = 23AApplicationsVCE(sat) 3.1V( Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 2500 VVCGR TJ = 25C to 150C, RGE = 1M 2500 VVGES Continuous 20 V12VGEM Transient 30 VIsolated Tab5IC25 TC = 25C 23 A1

Otros transistores... IXGA50N60C4 , IXGA7N60BD1 , IXGA7N60CD1 , IXGB200N60B3 , IXGB75N60BD1 , IXGE200N60B , IXGF20N250 , IXGF20N300 , TGD30N40P , IXGF25N300 , IXGF30N400 , IXGF32N170 , IXGF36N300 , IXGH100N30B3 , IXGH100N30C3 , IXGH10N170 , IXGH10N170A .

History: STGW40H120DF2 | KGT15N120NDS | NGTB15N135IHRWG | STGB18N40LZ | GT15J102 | XNF6N60T | TA49015

 

 
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