IXGH120N30B3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGH120N30B3
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 540 W
|Vce|ⓘ - Tensión máxima colector-emisor: 300 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.42 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 27 nS
Coesⓘ - Capacitancia de salida, typ: 650 pF
Qgⓘ - Carga total de la puerta, typ: 225 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de IXGH120N30B3 - IGBT
IXGH120N30B3 Datasheet (PDF)
ixgh120n30b3.pdf
TMVCES = 300VGenX3 300V IGBT IXGH120N30B3IC110 = 120AVCE(sat) 1.7VMedium speed low Vsat PTIGBTs for 10-50 kHz switchingSymbol Test Conditions Maximum RatingsTO-247 (IXGH)VCES TJ = 25C to 150C 300 VVCGR TJ = 25C to 150C, RGE = 1M 300 VVGES Continuous 20 VVGEM Transient 30 VGTABCIC25 TC = 25C (limited by leads) 75 AEIC110
ixgh120n30c3.pdf
Preliminary Technical InformationIXGH120N30C3 VCES = 300VGenX3TM 300V IGBTIC110 = 120A VCE(sat) 2.1V High speed PT IGBTs fortfi(typ) = 86ns50-150kHz switchingTO-247 ADSymbol Test Conditions Maximum Ratings (IXGH)VCES TJ = 25C to 150C 300 VVCGR TJ = 25C to 150C, RGE = 1M 300 VGVGES Continuous 20 VC (TAB)EVGEM Transient 30
ixgh12n100u1.pdf
VCES IC25 VCE(sat)Low VCE(sat) IGBT with DiodeHigh Speed IGBT with DiodeIXGH 12N100U1 1000 V 24 A 3.5 VCombi Pack IXGH 12N100AU1 1000 V 24 A 4.0 VSymbol Test Conditions Maximum RatingsTO-247ADVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VVGEM Transient 30 VC (TAB)GCIC25 TC = 25C24 AEIC90 TC = 90C12 AICM
ixgh12n100au1.pdf
VCES IC25 VCE(sat)Low VCE(sat) IGBT with DiodeHigh Speed IGBT with DiodeIXGH 12N100U1 1000 V 24 A 3.5 VCombi Pack IXGH 12N100AU1 1000 V 24 A 4.0 VSymbol Test Conditions Maximum RatingsTO-247ADVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VVGEM Transient 30 VC (TAB)GCIC25 TC = 25C24 AEIC90 TC = 90C12 AICM
ixga12n120a3 ixgp12n120a3 ixgh12n120a3.pdf
GenX3TM 1200V VCES = 1200VIXGA12N120A3IGBTs IC90 = 12AIXGP12N120A3 VCE(sat) 3.0V IXGH12N120A3High Surge CurrentTO-263 AA (IXGA)Ultra-Low Vsat PT IGBTs forup to 3kHz SwitchingGSD (Tab)TO-220AB (IXGP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VG
ixgh12n100.pdf
VCES IC25 VCE(sat)Low VCE(sat) IGBTHigh Speed IGBTIXGH 12N100 1000 V 24 A 3.5 VIXGH 12N100A 1000 V 24 A 4.0 VSymbol Test Conditions Maximum Ratings TO-247ADVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VC (TAB)GCVGEM Transient 30 VEIC25 TC = 25C24 AG = Gate C = CollectorIC90 TC = 90C12 AE = Emitter TAB =
ixgh12n60cd1.pdf
HiPerFASTTM IGBT IXGH 12N60CD1 VCES = 600 V IC25 = 24 ALightspeedTM Series VCE(sat) = 2.7 Vtfi(typ) = 55 nsSymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VC (TAB)GVGEM Transient 30 VCEIC25 TC = 25C24 AIC90 TC = 90C12 AICM TC = 25C, 1 ms 48 AG = Gate, C = Co
ixgh12n90c.pdf
HiPerFASTTM IGBTIXGH 12N90C VCES = 900 VLightspeedTM Series IXGX 12N90C IC25 = 24 AVCES(sat) = 3.0 Vtfi(typ) = 70 nsSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 M 900 VVGES Continuous 20 VC (TAB)VGEM Transient 30 VGCEIC25 TC = 25C24 AIC90 TC = 90C12 APLUS 247 (IXGX)ICM TC = 25
ixgh12n120a3.pdf
GenX3TM 1200V VCES = 1200VIXGA12N120A3IGBTs IC90 = 12AIXGP12N120A3 VCE(sat) 3.0V IXGH12N120A3High Surge CurrentTO-263 AA (IXGA)Ultra-Low Vsat PT IGBTs forup to 3kHz SwitchingGSD (Tab)TO-220AB (IXGP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VG
ixgh12n100a.pdf
VCES IC25 VCE(sat)Low VCE(sat) IGBTHigh Speed IGBTIXGH 12N100 1000 V 24 A 3.5 VIXGH 12N100A 1000 V 24 A 4.0 VSymbol Test Conditions Maximum Ratings TO-247ADVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VC (TAB)GCVGEM Transient 30 VEIC25 TC = 25C24 AG = Gate C = CollectorIC90 TC = 90C12 AE = Emitter TAB =
ixgh12n60c.pdf
IXGH 12N60CHiPerFASTTM IGBTVCES = 600 VLightspeedTM Series IC25 = 24 AVCE(sat) = 2.7 Vtfi(typ) = 55 nsSymbol Test Conditions Maximum RatingsTO-247VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 V C (TAB)GIC25 TC = 25C24 ACEIC90 TC = 90C12 AICM TC = 25C, 1 ms 48 AG = Gate, C = Collecto
ixgh12n60bd1.pdf
IXGH 12N60BD1HiPerFASTTM IGBTVDSS = 600 VID25 = 24 AVCE(sat) = 2.1 Vtfi(typ) = 120 nsPreliminary dataSymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VC (TAB)VGEM Transient 30 VGCIC25 TC = 25C24 A EIC90 TC = 90C12 AICM TC = 25C, 1 ms 48 AG = Gate, C = Collect
ixgh12n100 ixgh12n100a.pdf
VCES IC25 VCE(sat)Low VCE(sat) IGBTHigh Speed IGBTIXGH 12N100 1000 V 24 A 3.5 VIXGH 12N100A 1000 V 24 A 4.0 VSymbol Test Conditions Maximum Ratings TO-247ADVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VC (TAB)GCVGEM Transient 30 VEIC25 TC = 25C24 AG = Gate C = CollectorIC90 TC = 90C12 AE = Emitter TAB =
ixgh12n60b.pdf
HiPerFASTTM IGBT IXGH 12N60BVDSS = 600 V ID25 = 24 A VCE(SAT) = 2.1 Vtfi(typ) = 120 nsPreliminary dataSymbol Test Conditions Maximum Ratings TO-247VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VC (TAB)VGEM Transient 30 VGCIC25 TC = 25C24 A EIC90 TC = 90C12 AICM TC = 25C, 1 ms 48 AG = Gate, C = Collector,
Otros transistores... IXGF30N400 , IXGF32N170 , IXGF36N300 , IXGH100N30B3 , IXGH100N30C3 , IXGH10N170 , IXGH10N170A , IXGH10N300 , XNF15N60T , IXGH120N30C3 , IXGH12N120A3 , IXGH15N120B2D1 , IXGH16N170 , IXGH16N170A , IXGH16N170AH1 , IXGH16N60B2D1 , IXGH16N60C2D1 .
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