IXGH120N30B3 Todos los transistores

 

IXGH120N30B3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXGH120N30B3
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 540 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 300 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.42 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 27 nS
   Coesⓘ - Capacitancia de salida, typ: 650 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

IXGH120N30B3 Datasheet (PDF)

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IXGH120N30B3

TMVCES = 300VGenX3 300V IGBT IXGH120N30B3IC110 = 120AVCE(sat) 1.7VMedium speed low Vsat PTIGBTs for 10-50 kHz switchingSymbol Test Conditions Maximum RatingsTO-247 (IXGH)VCES TJ = 25C to 150C 300 VVCGR TJ = 25C to 150C, RGE = 1M 300 VVGES Continuous 20 VVGEM Transient 30 VGTABCIC25 TC = 25C (limited by leads) 75 AEIC110

 4.1. Size:115K  ixys
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IXGH120N30B3

Preliminary Technical InformationIXGH120N30C3 VCES = 300VGenX3TM 300V IGBTIC110 = 120A VCE(sat) 2.1V High speed PT IGBTs fortfi(typ) = 86ns50-150kHz switchingTO-247 ADSymbol Test Conditions Maximum Ratings (IXGH)VCES TJ = 25C to 150C 300 VVCGR TJ = 25C to 150C, RGE = 1M 300 VGVGES Continuous 20 VC (TAB)EVGEM Transient 30

 8.1. Size:119K  ixys
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IXGH120N30B3

VCES IC25 VCE(sat)Low VCE(sat) IGBT with DiodeHigh Speed IGBT with DiodeIXGH 12N100U1 1000 V 24 A 3.5 VCombi Pack IXGH 12N100AU1 1000 V 24 A 4.0 VSymbol Test Conditions Maximum RatingsTO-247ADVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VVGEM Transient 30 VC (TAB)GCIC25 TC = 25C24 AEIC90 TC = 90C12 AICM

 8.2. Size:119K  ixys
ixgh12n100au1.pdf pdf_icon

IXGH120N30B3

VCES IC25 VCE(sat)Low VCE(sat) IGBT with DiodeHigh Speed IGBT with DiodeIXGH 12N100U1 1000 V 24 A 3.5 VCombi Pack IXGH 12N100AU1 1000 V 24 A 4.0 VSymbol Test Conditions Maximum RatingsTO-247ADVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VVGEM Transient 30 VC (TAB)GCIC25 TC = 25C24 AEIC90 TC = 90C12 AICM

Otros transistores... IXGF30N400 , IXGF32N170 , IXGF36N300 , IXGH100N30B3 , IXGH100N30C3 , IXGH10N170 , IXGH10N170A , IXGH10N300 , IRG4PC50UD , IXGH120N30C3 , IXGH12N120A3 , IXGH15N120B2D1 , IXGH16N170 , IXGH16N170A , IXGH16N170AH1 , IXGH16N60B2D1 , IXGH16N60C2D1 .

History: MMG75WD120XB6T4N | DAHF100G120SA

 

 
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