IXGH120N30B3 Specs and Replacement
Type Designator: IXGH120N30B3
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ -
Maximum Power Dissipation: 540 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 300 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 75 A @25℃
Tj ⓘ -
Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 1.42 V @25℃
tr ⓘ - Rise Time, typ: 27 nS
Coesⓘ - Output Capacitance, typ: 650 pF
Package: TO247
IXGH120N30B3 Substitution
- IGBTⓘ Cross-Reference Search
IXGH120N30B3 datasheet
..1. Size:160K ixys
ixgh120n30b3.pdf 

TM VCES = 300V GenX3 300V IGBT IXGH120N30B3 IC110 = 120A VCE(sat) 1.7V Medium speed low Vsat PT IGBTs for 10-50 kHz switching Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 300 V VCGR TJ = 25 C to 150 C, RGE = 1M 300 V VGES Continuous 20 V VGEM Transient 30 V G TAB C IC25 TC = 25 C (limited by leads) 75 A E IC110... See More ⇒
4.1. Size:115K ixys
ixgh120n30c3.pdf 

Preliminary Technical Information IXGH120N30C3 VCES = 300V GenX3TM 300V IGBT IC110 = 120A VCE(sat) 2.1V High speed PT IGBTs for tfi(typ) = 86ns 50-150kHz switching TO-247 AD Symbol Test Conditions Maximum Ratings (IXGH) VCES TJ = 25 C to 150 C 300 V VCGR TJ = 25 C to 150 C, RGE = 1M 300 V G VGES Continuous 20 V C (TAB) E VGEM Transient 30 ... See More ⇒
8.1. Size:119K ixys
ixgh12n100u1.pdf 

VCES IC25 VCE(sat) Low VCE(sat) IGBT with Diode High Speed IGBT with Diode IXGH 12N100U1 1000 V 24 A 3.5 V Combi Pack IXGH 12N100AU1 1000 V 24 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1000 V VGES Continuous 20 V VGEM Transient 30 V C (TAB) G C IC25 TC = 25 C24 A E IC90 TC = 90 C12 A ICM ... See More ⇒
8.2. Size:119K ixys
ixgh12n100au1.pdf 

VCES IC25 VCE(sat) Low VCE(sat) IGBT with Diode High Speed IGBT with Diode IXGH 12N100U1 1000 V 24 A 3.5 V Combi Pack IXGH 12N100AU1 1000 V 24 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1000 V VGES Continuous 20 V VGEM Transient 30 V C (TAB) G C IC25 TC = 25 C24 A E IC90 TC = 90 C12 A ICM ... See More ⇒
8.3. Size:201K ixys
ixga12n120a3 ixgp12n120a3 ixgh12n120a3.pdf 

GenX3TM 1200V VCES = 1200V IXGA12N120A3 IGBTs IC90 = 12A IXGP12N120A3 VCE(sat) 3.0V IXGH12N120A3 High Surge Current TO-263 AA (IXGA) Ultra-Low Vsat PT IGBTs for up to 3kHz Switching G S D (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V G... See More ⇒
8.4. Size:34K ixys
ixgh12n100.pdf 

VCES IC25 VCE(sat) Low VCE(sat) IGBT High Speed IGBT IXGH 12N100 1000 V 24 A 3.5 V IXGH 12N100A 1000 V 24 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1000 V VGES Continuous 20 V C (TAB) G C VGEM Transient 30 V E IC25 TC = 25 C24 A G = Gate C = Collector IC90 TC = 90 C12 A E = Emitter TAB = ... See More ⇒
8.5. Size:59K ixys
ixgh12n60cd1.pdf 

HiPerFASTTM IGBT IXGH 12N60CD1 VCES = 600 V IC25 = 24 A LightspeedTM Series VCE(sat) = 2.7 V tfi(typ) = 55 ns Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V C (TAB) G VGEM Transient 30 V C E IC25 TC = 25 C24 A IC90 TC = 90 C12 A ICM TC = 25 C, 1 ms 48 A G = Gate, C = Co... See More ⇒
8.6. Size:141K ixys
ixgh12n90c.pdf 

HiPerFASTTM IGBT IXGH 12N90C VCES = 900 V LightspeedTM Series IXGX 12N90C IC25 = 24 A VCES(sat) = 3.0 V tfi(typ) = 70 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 900 V VCGR TJ = 25 C to 150 C; RGE = 1 M 900 V VGES Continuous 20 V C (TAB) VGEM Transient 30 V G C E IC25 TC = 25 C24 A IC90 TC = 90 C12 A PLUS 247 (IXGX) ICM TC = 25 ... See More ⇒
8.7. Size:199K ixys
ixgh12n120a3.pdf 

GenX3TM 1200V VCES = 1200V IXGA12N120A3 IGBTs IC90 = 12A IXGP12N120A3 VCE(sat) 3.0V IXGH12N120A3 High Surge Current TO-263 AA (IXGA) Ultra-Low Vsat PT IGBTs for up to 3kHz Switching G S D (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V G... See More ⇒
8.8. Size:34K ixys
ixgh12n100a.pdf 

VCES IC25 VCE(sat) Low VCE(sat) IGBT High Speed IGBT IXGH 12N100 1000 V 24 A 3.5 V IXGH 12N100A 1000 V 24 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1000 V VGES Continuous 20 V C (TAB) G C VGEM Transient 30 V E IC25 TC = 25 C24 A G = Gate C = Collector IC90 TC = 90 C12 A E = Emitter TAB = ... See More ⇒
8.9. Size:54K ixys
ixgh12n60c.pdf 

IXGH 12N60C HiPerFASTTM IGBT VCES = 600 V LightspeedTM Series IC25 = 24 A VCE(sat) = 2.7 V tfi(typ) = 55 ns Symbol Test Conditions Maximum Ratings TO-247 VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V C (TAB) G IC25 TC = 25 C24 A C E IC90 TC = 90 C12 A ICM TC = 25 C, 1 ms 48 A G = Gate, C = Collecto... See More ⇒
8.10. Size:34K ixys
ixgh12n60bd1.pdf 

IXGH 12N60BD1 HiPerFASTTM IGBT VDSS = 600 V ID25 = 24 A VCE(sat) = 2.1 V tfi(typ) = 120 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V C (TAB) VGEM Transient 30 V G C IC25 TC = 25 C24 A E IC90 TC = 90 C12 A ICM TC = 25 C, 1 ms 48 A G = Gate, C = Collect... See More ⇒
8.11. Size:35K ixys
ixgh12n100 ixgh12n100a.pdf 

VCES IC25 VCE(sat) Low VCE(sat) IGBT High Speed IGBT IXGH 12N100 1000 V 24 A 3.5 V IXGH 12N100A 1000 V 24 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1000 V VGES Continuous 20 V C (TAB) G C VGEM Transient 30 V E IC25 TC = 25 C24 A G = Gate C = Collector IC90 TC = 90 C12 A E = Emitter TAB = ... See More ⇒
8.12. Size:33K ixys
ixgh12n60b.pdf 

HiPerFASTTM IGBT IXGH 12N60B VDSS = 600 V ID25 = 24 A VCE(SAT) = 2.1 V tfi(typ) = 120 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V C (TAB) VGEM Transient 30 V G C IC25 TC = 25 C24 A E IC90 TC = 90 C12 A ICM TC = 25 C, 1 ms 48 A G = Gate, C = Collector, ... See More ⇒
Specs: IXGF30N400, IXGF32N170, IXGF36N300, IXGH100N30B3, IXGH100N30C3, IXGH10N170, IXGH10N170A, IXGH10N300, IRG4PC50UD, IXGH120N30C3, IXGH12N120A3, IXGH15N120B2D1, IXGH16N170, IXGH16N170A, IXGH16N170AH1, IXGH16N60B2D1, IXGH16N60C2D1
Keywords - IXGH120N30B3 transistor spec
IXGH120N30B3 cross reference
IXGH120N30B3 equivalent finder
IXGH120N30B3 lookup
IXGH120N30B3 substitution
IXGH120N30B3 replacement