IXGH15N120B2D1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGH15N120B2D1

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 192 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.3(max) V @25℃

trⓘ - Tiempo de subida, typ: 15 nS

Coesⓘ - Capacitancia de salida, typ: 95 pF

Encapsulados: TO247

 Búsqueda de reemplazo de IXGH15N120B2D1 IGBT

- Selecciónⓘ de transistores por parámetros

 

IXGH15N120B2D1 datasheet

 ..1. Size:66K  ixys
 ixgh15n120b2d1.pdf pdf_icon

IXGH15N120B2D1

Advance Technical Information VCES =1200 V IXGH15N120B2D1 HiPerFASTTM IGBT IC25 = 30 A IXGT15N120B2D1 VCE(sat) = 3.3 V Optimized for 10-20 KHz hard tfi(typ) = 137 ns switching and up to 100 KHz resonant switching Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25 C to 150 C 1200 V (IXGH) VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V G TAB C

 3.1. Size:529K  ixys
 ixgh15n120b ixgt15n120b.pdf pdf_icon

IXGH15N120B2D1

IXGH 15N120B VCES = 1200 V HiPerFASTTM IGBT IXGT 15N120B IC25 = 30 A VCE(sat) = 3.2 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C30 A TO-247 AD (IXGH) IC110 TC = 110 C15 A ICM TC = 25 C, 1 ms 60 A

 3.2. Size:170K  ixys
 ixgh15n120b.pdf pdf_icon

IXGH15N120B2D1

IXGH 15N120B VCES = 1200 V HiPerFASTTM IGBT IXGT 15N120B IC25 = 30 A VCE(sat) = 3.2 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C30 A TO-247 AD (IXGH) IC110 TC = 110 C15 A ICM TC = 25 C, 1 ms 60 A

 3.3. Size:60K  ixys
 ixgh15n120bd1.pdf pdf_icon

IXGH15N120B2D1

Low VCE(sat) IGBT with Diode VDSS IC25 VCE(sat) High Speed IGBT with Diode IXGH/IXGT 15N120BD1 1200 V 30 A 3.2 V IXGH/IXGT 15N120CD1 1200 V 30 A 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247AD (IXGH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V G VGES Continuous 20 V C E TAB VGEM Transient 30 V IC25 TC = 25 C30 A TO-2

MOSTRAR MÁS

Otros transistores... IXGH100N30B3, IXGH100N30C3, IXGH10N170, IXGH10N170A, IXGH10N300, IXGH120N30B3, IXGH120N30C3, IXGH12N120A3, NGTB75N65FL2, IXGH16N170, IXGH16N170A, IXGH16N170AH1, IXGH16N60B2D1, IXGH16N60C2D1, IXGH20N100A3, IXGH20N120, IXGH20N120A3