IXGH15N120B2D1 - параметры транзистора, его аналоги, Даташиты

IXGH15N120B2D1 Datasheet (PDF)

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Advance Technical InformationVCES =1200 VIXGH15N120B2D1HiPerFASTTM IGBTIC25 = 30 AIXGT15N120B2D1VCE(sat) = 3.3 VOptimized for 10-20 KHz hardtfi(typ) = 137 nsswitching and up to 100 KHzresonant switchingSymbol Test Conditions Maximum RatingsTO-247ADVCES TJ = 25C to 150C 1200 V(IXGH)VCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGTABC

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IXGH 15N120B VCES = 1200 VHiPerFASTTM IGBTIXGT 15N120B IC25 = 30 AVCE(sat) = 3.2 Vtfi(typ) = 160 nsSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C30 ATO-247 AD (IXGH)IC110 TC = 110C15 AICM TC = 25C, 1 ms 60 A

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Low VCE(sat) IGBT with Diode VDSS IC25 VCE(sat)High Speed IGBT with DiodeIXGH/IXGT 15N120BD11200 V 30 A 3.2 VIXGH/IXGT 15N120CD11200 V 30 A 3.8 VPreliminary dataSymbol Test Conditions Maximum Ratings TO-247AD(IXGH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VGVGES Continuous 20 V CETABVGEM Transient 30 VIC25 TC = 25C30 ATO-2

Другие IGBT... IXGH100N30B3 , IXGH100N30C3 , IXGH10N170 , IXGH10N170A , IXGH10N300 , IXGH120N30B3 , IXGH120N30C3 , IXGH12N120A3 , IKW40T120 , IXGH16N170 , IXGH16N170A , IXGH16N170AH1 , IXGH16N60B2D1 , IXGH16N60C2D1 , IXGH20N100A3 , IXGH20N120 , IXGH20N120A3 .