IXGH20N100A3 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGH20N100A3
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 150 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1000 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
trⓘ - Tiempo de subida, typ: 110 nS
Coesⓘ - Capacitancia de salida, typ: 56 pF
Encapsulados: TO247
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IXGH20N100A3 datasheet
ixgh20n100a3.pdf
Advance Technical Information VCES = 1000V GenX3TM 1000V IXGA20N100A3 IC90 = 20A IGBTs IXGP20N100A3 VCE(sat) 2.3V IXGH20N100A3 Ultra-Low Vsat PT IGBTs for up to 3kHz Switching TO-263 (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXGP) VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C, RGE = 1M 1000 V VGES Continuous 20 V
ixgh20n100 ixgt20n100.pdf
IXGH 20N100 VCES = 1000 V IGBT IXGT 20N100 IC25 = 40 A VCE(sat) = 3.0 V tfi(typ) = 280 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1000 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 1000 V E VGES Continuous 20 V (TAB) VGEM Transient 30 V TO-247 AD (IXGH) IC25 TC = 25 C40 A IC90 TC = 90 C20 A ICM TC = 25 C, 1 ms 80 A S
ixgh20n100.pdf
IXGH 20N100 VCES = 1000 V IGBT IXGT 20N100 IC25 = 40 A VCE(sat) = 3.0 V tfi(typ) = 280 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1000 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 1000 V E VGES Continuous 20 V (TAB) VGEM Transient 30 V TO-247 AD (IXGH) IC25 TC = 25 C40 A IC90 TC = 90 C20 A ICM TC = 25 C, 1 ms 80 A S
ixgh20n120b ixgt20n120b.pdf
IXGH 20N120B VCES = 1200 V High Voltage IGBT IXGT 20N120B IC25 = 40 A VCE(sat) = 3.4 V Preliminary Data Sheet tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C40 A TO-247 AD (IXGH) IC110 TC = 110 C20 A ICM
Otros transistores... IXGH120N30C3, IXGH12N120A3, IXGH15N120B2D1, IXGH16N170, IXGH16N170A, IXGH16N170AH1, IXGH16N60B2D1, IXGH16N60C2D1, STGW60V60DF, IXGH20N120, IXGH20N120A3, IXGH20N120B, IXGH20N140C3H1, IXGH22N170, IXGH24N120C3, IXGH24N120C3H1, IXGH24N170
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