All IGBT. IXGH20N100A3 Datasheet

 

IXGH20N100A3 Datasheet and Replacement


   Type Designator: IXGH20N100A3
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 110 nS
   Coesⓘ - Output Capacitance, typ: 56 pF
   Package: TO247
      - IGBT Cross-Reference

 

IXGH20N100A3 Datasheet (PDF)

 ..1. Size:220K  ixys
ixgh20n100a3.pdf pdf_icon

IXGH20N100A3

Advance Technical InformationVCES = 1000VGenX3TM 1000V IXGA20N100A3IC90 = 20AIGBTs IXGP20N100A3VCE(sat) 2.3VIXGH20N100A3 Ultra-Low Vsat PT IGBTs forup to 3kHz SwitchingTO-263 (IXGA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220 (IXGP)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C, RGE = 1M 1000 VVGES Continuous 20 V

 4.1. Size:53K  ixys
ixgh20n100 ixgt20n100.pdf pdf_icon

IXGH20N100A3

IXGH 20N100 VCES = 1000 VIGBTIXGT 20N100 IC25 = 40 AVCE(sat) = 3.0 Vtfi(typ) = 280 nsPreliminary dataSymbol Test Conditions Maximum RatingsTO-268(IXGT)VCES TJ = 25C to 150C 1000 VGVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VEVGES Continuous 20 V(TAB)VGEM Transient 30 VTO-247 AD (IXGH)IC25 TC = 25C40 AIC90 TC = 90C20 AICM TC = 25C, 1 ms 80 AS

 4.2. Size:52K  ixys
ixgh20n100.pdf pdf_icon

IXGH20N100A3

IXGH 20N100 VCES = 1000 VIGBTIXGT 20N100 IC25 = 40 AVCE(sat) = 3.0 Vtfi(typ) = 280 nsPreliminary dataSymbol Test Conditions Maximum RatingsTO-268(IXGT)VCES TJ = 25C to 150C 1000 VGVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VEVGES Continuous 20 V(TAB)VGEM Transient 30 VTO-247 AD (IXGH)IC25 TC = 25C40 AIC90 TC = 90C20 AICM TC = 25C, 1 ms 80 AS

 6.1. Size:568K  ixys
ixgh20n120b ixgt20n120b.pdf pdf_icon

IXGH20N100A3

IXGH 20N120B VCES = 1200 VHigh Voltage IGBTIXGT 20N120B IC25 = 40 AVCE(sat) = 3.4 VPreliminary Data Sheet tfi(typ) = 160 nsSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C40 ATO-247 AD (IXGH)IC110 TC = 110C20 AICM

Datasheet: IXGH120N30C3 , IXGH12N120A3 , IXGH15N120B2D1 , IXGH16N170 , IXGH16N170A , IXGH16N170AH1 , IXGH16N60B2D1 , IXGH16N60C2D1 , IXRH40N120 , IXGH20N120 , IXGH20N120A3 , IXGH20N120B , IXGH20N140C3H1 , IXGH22N170 , IXGH24N120C3 , IXGH24N120C3H1 , IXGH24N170 .

History: FF1200R17KE3_B2 | SPT25N120F1A1T8TL

Keywords - IXGH20N100A3 transistor datasheet

 IXGH20N100A3 cross reference
 IXGH20N100A3 equivalent finder
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