IXGH24N120C3H1 Todos los transistores

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IXGH24N120C3H1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGH24N120C3H1

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 1200V

Voltaje de saturación colector-emisor (Vce sat): 4.2V

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 48A

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación: 110

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO247

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IXGH24N120C3H1 Datasheet (PDF)

1.1. ixgh24n120c3h1.pdf Size:139K _igbt

IXGH24N120C3H1
IXGH24N120C3H1

Preliminary Technical Information VCES = 1200V GenX3TM 1200V IGBT IXGH24N120C3H1 IC25 = 48A ≤ VCE(sat) ≤ ≤ 4.2V ≤ ≤ High speed PT IGBTs for tfi(typ) = 110ns 10-50kHz Switching Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V G IC25 TC = 25°C48 T

1.2. ixgh24n120c3.pdf Size:188K _igbt

IXGH24N120C3H1
IXGH24N120C3H1

Preliminary Technical Information VCES = 1200V GenX3TM 1200V IGBT IXGA24N120C3 IC25 = 48A IXGH24N120C3 ≤ VCE(sat) ≤ ≤ 4.2V ≤ IXGP24N120C3 ≤ High speed PT IGBTs for tfi(typ) = 110ns 10-50kHz Switching TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V G E VGES Continuous ±20 V C (TAB) V

2.1. ixgh24n170a ixgt24n170a.pdf Size:519K _ixys

IXGH24N120C3H1
IXGH24N120C3H1

IXGH 24N170A VCES = 1700 V High Voltage IXGT 24N170A IC25 = 24 A IGBT VCE(sat) = 6.0 V tfi(typ) = 45 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25C to 150C 1700 V VCGR TJ = 25C to 150C; RGE = 1 M? 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25C24 A TO-247 AD (IXGH) IC90 TC = 90C16 A ICM TC = 25C, 1

2.2. ixgh24n170a.pdf Size:222K _igbt

IXGH24N120C3H1
IXGH24N120C3H1

Preliminary Technical Information High Voltage VCES = 1700V IXGH24N170A IGBTs IXGT24N170A IC25 = 24A ≤ VCE(sat) ≤ ≤ 6.0V ≤ ≤ tfi(typ) = 40ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V G C (TAB) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V C E VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 24 A TO-268 (IX

2.3. ixgh24n170.pdf Size:113K _igbt

IXGH24N120C3H1
IXGH24N120C3H1

Advance Technical Information VCES = 1700V High Voltage IXGH24N170 IC25 = 50A IGBT IXGT24N170 ≤ VCE(sat) ≤ ≤ 3.3V ≤ ≤ tfi(typ) = 250ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V G C C (TAB) VGES Continuous ± 20 V E VGEM Transient ± 30 V TO-268 (IXGT) IC25 TC = 25°C 50 A IC9

2.4. ixgh24n170ah1.pdf Size:223K _igbt

IXGH24N120C3H1
IXGH24N120C3H1

Preliminary Technical Information High Voltage VCES = 1700V IXGH24N170AH1 IGBTs w/Diode IXGT24N170AH1 IC25 = 24A ≤ VCE(sat) ≤ ≤ 6.0V ≤ ≤ tfi(typ) = 40ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V G C (TAB) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V C E VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 24 A

Otros transistores... IXGH16N60C2D1 , IXGH20N100A3 , IXGH20N120 , IXGH20N120A3 , IXGH20N120B , IXGH20N140C3H1 , IXGH22N170 , IXGH24N120C3 , 10N50E1D , IXGH24N170 , IXGH24N170A , IXGH24N170AH1 , IXGH24N60C4 , IXGH24N60C4D1 , IXGH25N160 , IXGH25N250 , IXGH28N120B .

 


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