IXGH25N160 Todos los transistores

 

IXGH25N160 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXGH25N160
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 300 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5(max) V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 236 nS
   Coesⓘ - Capacitancia de salida, typ: 94 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

IXGH25N160 Datasheet (PDF)

 ..1. Size:142K  ixys
 ixgh25n160 ixgt25n160.pdf pdf_icon

IXGH25N160

VCES = 1600 VIXGH 25N160High Voltage IGBTIC25 = 75 AIXGT 25N160VCE(sat)= 2.5 VFor Capacitor DischargeApplicationsPreliminary Data SheetSymbol Test Conditions Maximum RatingsTO-247 (IXGH)VCES TJ = 25C to 150C 1600 VVCGR TJ = 25C to 150C; RGE = 1 M 1600 VVGES Continuous 20 VGC C (TAB)VGEM Transient 30 VEIC25 TC = 25C 75 ATO-268 (IXGT)IC110

 ..2. Size:138K  ixys
 ixgh25n160.pdf pdf_icon

IXGH25N160

VCES = 1600 VIXGH 25N160High Voltage IGBTIC25 = 75 AIXGT 25N160VCE(sat)= 2.5 VFor Capacitor DischargeApplicationsPreliminary Data SheetSymbol Test Conditions Maximum RatingsTO-247 (IXGH)VCES TJ = 25C to 150C 1600 VVCGR TJ = 25C to 150C; RGE = 1 M 1600 VVGES Continuous 20 VGC C (TAB)VGEM Transient 30 VEIC25 TC = 25C 75 ATO-268 (IXGT)IC110

 6.1. Size:227K  ixys
 ixgh25n100u1.pdf pdf_icon

IXGH25N160

Preliminary data VCES IC25 VCE(sat)Low VCE(sat)High speed IGBTIXGH25N100U1 1000 V 50 A 3.5 VIXGH25N100AU1 1000 V 50 A 4.0 Vwith DiodeTO-247 AD (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1000 VGCEVCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VG = Gate C = CollectorVGEM Transient 30 VE = Emitter TAB = CollectorI

 6.2. Size:34K  ixys
 ixgh25n120.pdf pdf_icon

IXGH25N160

VCES IC25 VCE(sat)Low VCE(sat) IXGH 25 N120 1200 V 50 A 3 VHigh speed IGBT IXGH 25 N120A 1200 V 50 A 4 VSymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C50 AG = Gate, C = Collector,IC90 TC = 90C25 AE = Emitter, TAB = CollectorI

MOSTRAR MÁS

Otros transistores... IXGH22N170 , IXGH24N120C3 , IXGH24N120C3H1 , IXGH24N170 , IXGH24N170A , IXGH24N170AH1 , IXGH24N60C4 , IXGH24N60C4D1 , IRG7S313U , IXGH25N250 , IXGH28N120B , IXGH28N120BD1 , IXGH28N140B3H1 , IXGH28N60B3D1 , IXGH28N60BD1 , IXGH2N250 , IXGH30N120B3 .

History: IXGH64N60A3 | CM75RL-12NF | RJH1CM5DPQ-E0 | IXGT30N60C3D1 | MMG200DR120B | APTGT50X170BTP3

 

 
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