Справочник IGBT. IXGH25N160

 

IXGH25N160 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IXGH25N160
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 75 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.5(max) V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 236 nS
   Coesⓘ - Выходная емкость, типовая: 94 pF
   Тип корпуса: TO247

 Аналог (замена) для IXGH25N160

 

 

IXGH25N160 Datasheet (PDF)

 ..1. Size:142K  ixys
 ixgh25n160 ixgt25n160.pdf

IXGH25N160 IXGH25N160

VCES = 1600 VIXGH 25N160High Voltage IGBTIC25 = 75 AIXGT 25N160VCE(sat)= 2.5 VFor Capacitor DischargeApplicationsPreliminary Data SheetSymbol Test Conditions Maximum RatingsTO-247 (IXGH)VCES TJ = 25C to 150C 1600 VVCGR TJ = 25C to 150C; RGE = 1 M 1600 VVGES Continuous 20 VGC C (TAB)VGEM Transient 30 VEIC25 TC = 25C 75 ATO-268 (IXGT)IC110

 ..2. Size:138K  ixys
 ixgh25n160.pdf

IXGH25N160 IXGH25N160

VCES = 1600 VIXGH 25N160High Voltage IGBTIC25 = 75 AIXGT 25N160VCE(sat)= 2.5 VFor Capacitor DischargeApplicationsPreliminary Data SheetSymbol Test Conditions Maximum RatingsTO-247 (IXGH)VCES TJ = 25C to 150C 1600 VVCGR TJ = 25C to 150C; RGE = 1 M 1600 VVGES Continuous 20 VGC C (TAB)VGEM Transient 30 VEIC25 TC = 25C 75 ATO-268 (IXGT)IC110

 6.1. Size:227K  ixys
 ixgh25n100u1.pdf

IXGH25N160 IXGH25N160

Preliminary data VCES IC25 VCE(sat)Low VCE(sat)High speed IGBTIXGH25N100U1 1000 V 50 A 3.5 VIXGH25N100AU1 1000 V 50 A 4.0 Vwith DiodeTO-247 AD (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1000 VGCEVCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VG = Gate C = CollectorVGEM Transient 30 VE = Emitter TAB = CollectorI

 6.2. Size:34K  ixys
 ixgh25n120.pdf

IXGH25N160 IXGH25N160

VCES IC25 VCE(sat)Low VCE(sat) IXGH 25 N120 1200 V 50 A 3 VHigh speed IGBT IXGH 25 N120A 1200 V 50 A 4 VSymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C50 AG = Gate, C = Collector,IC90 TC = 90C25 AE = Emitter, TAB = CollectorI

 6.3. Size:227K  ixys
 ixgh25n100au1.pdf

IXGH25N160 IXGH25N160

Preliminary data VCES IC25 VCE(sat)Low VCE(sat)High speed IGBTIXGH25N100U1 1000 V 50 A 3.5 VIXGH25N100AU1 1000 V 50 A 4.0 Vwith DiodeTO-247 AD (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1000 VGCEVCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VG = Gate C = CollectorVGEM Transient 30 VE = Emitter TAB = CollectorI

 6.4. Size:76K  ixys
 ixgh25n100a.pdf

IXGH25N160 IXGH25N160

VCES IC25 VCE(sat)Low VCE(sat) IXGH/IXGM 25 N100 1000 V 50 A 3.5 VHigh speed IGBT IXGH/IXGM 25 N100A 1000 V 50 A 4.0 VSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C50 AIC90 TC = 90C25 A TO-204 AE (IXGM)ICM TC = 25C, 1 m

 6.5. Size:76K  ixys
 ixgh25n100.pdf

IXGH25N160 IXGH25N160

VCES IC25 VCE(sat)Low VCE(sat) IXGH/IXGM 25 N100 1000 V 50 A 3.5 VHigh speed IGBT IXGH/IXGM 25 N100A 1000 V 50 A 4.0 VSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C50 AIC90 TC = 90C25 A TO-204 AE (IXGM)ICM TC = 25C, 1 m

Другие IGBT... IXGH22N170 , IXGH24N120C3 , IXGH24N120C3H1 , IXGH24N170 , IXGH24N170A , IXGH24N170AH1 , IXGH24N60C4 , IXGH24N60C4D1 , HGTG30N60A4 , IXGH25N250 , IXGH28N120B , IXGH28N120BD1 , IXGH28N140B3H1 , IXGH28N60B3D1 , IXGH28N60BD1 , IXGH2N250 , IXGH30N120B3 .

 

 
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