IXGH25N250 Todos los transistores

 ..1. Size:173K  ixys
 ixgh25n250.pdf

Preliminary Technical Information IXGH25N250 VCES = 2500 V High Voltage IGBT IXGT25N250 IC25 = 60 A For Capacitor Discharge Applications IXGV25N250S VCE(sat) 2.9 V TO-247 (IXGH) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 2500 V C C (TAB) E VCGR TJ = 25 C to 150 C; RGE = 1 M 2500 V VGES Continuous 20 V TO-268 (IXGT) VGEM Transi

 7.1. Size:227K  ixys
 ixgh25n100u1.pdf

Preliminary data VCES IC25 VCE(sat) Low VCE(sat) High speed IGBT IXGH25N100U1 1000 V 50 A 3.5 V IXGH25N100AU1 1000 V 50 A 4.0 V with Diode TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1000 V G C E VCGR TJ = 25 C to 150 C; RGE = 1 M 1000 V VGES Continuous 20 V G = Gate C = Collector VGEM Transient 30 V E = Emitter TAB = Collector I

 7.2. Size:34K  ixys
 ixgh25n120.pdf

VCES IC25 VCE(sat) Low VCE(sat) IXGH 25 N120 1200 V 50 A 3 V High speed IGBT IXGH 25 N120A 1200 V 50 A 4 V Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C50 A G = Gate, C = Collector, IC90 TC = 90 C25 A E = Emitter, TAB = Collector I

 7.3. Size:142K  ixys
 ixgh25n160 ixgt25n160.pdf

VCES = 1600 V IXGH 25N160 High Voltage IGBT IC25 = 75 A IXGT 25N160 VCE(sat)= 2.5 V For Capacitor Discharge Applications Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 1600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1600 V VGES Continuous 20 V G C C (TAB) VGEM Transient 30 V E IC25 TC = 25 C 75 A TO-268 (IXGT) IC110

 7.4. Size:227K  ixys
 ixgh25n100au1.pdf

Preliminary data VCES IC25 VCE(sat) Low VCE(sat) High speed IGBT IXGH25N100U1 1000 V 50 A 3.5 V IXGH25N100AU1 1000 V 50 A 4.0 V with Diode TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1000 V G C E VCGR TJ = 25 C to 150 C; RGE = 1 M 1000 V VGES Continuous 20 V G = Gate C = Collector VGEM Transient 30 V E = Emitter TAB = Collector I

 7.5. Size:76K  ixys
 ixgh25n100a.pdf

VCES IC25 VCE(sat) Low VCE(sat) IXGH/IXGM 25 N100 1000 V 50 A 3.5 V High speed IGBT IXGH/IXGM 25 N100A 1000 V 50 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1000 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C50 A IC90 TC = 90 C25 A TO-204 AE (IXGM) ICM TC = 25 C, 1 m

 7.6. Size:76K  ixys
 ixgh25n100.pdf

VCES IC25 VCE(sat) Low VCE(sat) IXGH/IXGM 25 N100 1000 V 50 A 3.5 V High speed IGBT IXGH/IXGM 25 N100A 1000 V 50 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1000 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C50 A IC90 TC = 90 C25 A TO-204 AE (IXGM) ICM TC = 25 C, 1 m

 7.7. Size:138K  ixys
 ixgh25n160.pdf

VCES = 1600 V IXGH 25N160 High Voltage IGBT IC25 = 75 A IXGT 25N160 VCE(sat)= 2.5 V For Capacitor Discharge Applications Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 1600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1600 V VGES Continuous 20 V G C C (TAB) VGEM Transient 30 V E IC25 TC = 25 C 75 A TO-268 (IXGT) IC110