IXGH25N250 IGBT. Datasheet pdf. Equivalent

   Type Designator: IXGH25N250
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 2500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.9(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 233 nS
   Coesⓘ - Output Capacitance, typ: 75 pF
   Qgⓘ - Total Gate Charge, typ: 75 nC
   Package: TO247

IXGH25N250 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IXGH25N250 Datasheet (PDF)

..1. Size:173K ixys
ixgh25n250.pdf

Preliminary Technical InformationIXGH25N250 VCES = 2500 VHigh Voltage IGBTIXGT25N250 IC25 = 60 AFor Capacitor DischargeApplications IXGV25N250S VCE(sat) 2.9 VTO-247 (IXGH)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 2500 V CC (TAB)EVCGR TJ = 25C to 150C; RGE = 1 M 2500 VVGES Continuous 20 VTO-268 (IXGT)VGEM Transi

7.1. Size:227K ixys
ixgh25n100u1.pdf

Preliminary data VCES IC25 VCE(sat)Low VCE(sat)High speed IGBTIXGH25N100U1 1000 V 50 A 3.5 VIXGH25N100AU1 1000 V 50 A 4.0 Vwith DiodeTO-247 AD (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1000 VGCEVCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VG = Gate C = CollectorVGEM Transient 30 VE = Emitter TAB = CollectorI

7.2. Size:34K ixys
ixgh25n120.pdf

VCES IC25 VCE(sat)Low VCE(sat) IXGH 25 N120 1200 V 50 A 3 VHigh speed IGBT IXGH 25 N120A 1200 V 50 A 4 VSymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C50 AG = Gate, C = Collector,IC90 TC = 90C25 AE = Emitter, TAB = CollectorI

7.3. Size:142K ixys
ixgh25n160 ixgt25n160.pdf

VCES = 1600 VIXGH 25N160High Voltage IGBTIC25 = 75 AIXGT 25N160VCE(sat)= 2.5 VFor Capacitor DischargeApplicationsPreliminary Data SheetSymbol Test Conditions Maximum RatingsTO-247 (IXGH)VCES TJ = 25C to 150C 1600 VVCGR TJ = 25C to 150C; RGE = 1 M 1600 VVGES Continuous 20 VGC C (TAB)VGEM Transient 30 VEIC25 TC = 25C 75 ATO-268 (IXGT)IC110

7.4. Size:227K ixys
ixgh25n100au1.pdf

7.5. Size:76K ixys
ixgh25n100a.pdf

VCES IC25 VCE(sat)Low VCE(sat) IXGH/IXGM 25 N100 1000 V 50 A 3.5 VHigh speed IGBT IXGH/IXGM 25 N100A 1000 V 50 A 4.0 VSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C50 AIC90 TC = 90C25 A TO-204 AE (IXGM)ICM TC = 25C, 1 m

7.6. Size:76K ixys
ixgh25n100.pdf