IXGH2N250 Todos los transistores

 ..1. Size:175K  ixys
 ixgh2n250.pdf

Advance Technical Information High Voltage IGBTs VCES = 2500V IXGH2N250 IXGT2N250 IC110 = 2A for Capacitor Discharge VCE(sat) 3.1V Applications TO-247 (IXGH) Symbol Test Conditions Maximum Ratings G C (TAB) VCES TC = 25 C to 150 C 2500 V C E VCGR TJ = 25 C to 150 C, RGE = 1M 2500 V VGES Continuous 20 V VGEM Transient 30 V TO-268 (IXGT) IC2

 9.1. Size:89K  ixys
 ixgh28n90b.pdf

IXGH 28N90B VCES = 900 V HiPerFASTTM IGBT IXGT 28N90B IC25 = 51 A VCE(SAT) = 2.7 V Preliminary data sheet tfi(typ) = 130 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 900 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 900 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C51 A IC110 TC = 110 C28 A TO-268 (D3) ICM TC =

 9.2. Size:568K  ixys
 ixgh20n120b ixgt20n120b.pdf

IXGH 20N120B VCES = 1200 V High Voltage IGBT IXGT 20N120B IC25 = 40 A VCE(sat) = 3.4 V Preliminary Data Sheet tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C40 A TO-247 AD (IXGH) IC110 TC = 110 C20 A ICM

 9.3. Size:101K  ixys
 ixgh24n60cd1.pdf

IXGH 24N60CD1 VCES = 600 V HiPerFASTTM IGBT IXGT 24N60CD1 IC25 = 48 A with Diode VCE(sat) = 2.5 V Lightspeed Series Preliminary data TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C48 A TO-247 AD (IXGH) IC110 TC = 110 C24 A

 9.4. Size:233K  ixys
 ixgh24n60c4d1.pdf

VCES = 600V High-Gain IGBT IXGH24N60C4D1 IC110 = 24A w/ Diode VCE(sat) 2.70V tfi(typ) = 68ns High-Speed PT Trench IGBT TO-247 AD Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 600 V C Tab E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G = Gate C = Collector VGEM Transient 30 V E = Emitter

 9.5. Size:227K  ixys
 ixgh25n100u1.pdf

Preliminary data VCES IC25 VCE(sat) Low VCE(sat) High speed IGBT IXGH25N100U1 1000 V 50 A 3.5 V IXGH25N100AU1 1000 V 50 A 4.0 V with Diode TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1000 V G C E VCGR TJ = 25 C to 150 C; RGE = 1 M 1000 V VGES Continuous 20 V G = Gate C = Collector VGEM Transient 30 V E = Emitter TAB = Collector I

 9.6. Size:139K  ixys
 ixgh24n120c3h1.pdf

Preliminary Technical Information VCES = 1200V GenX3TM 1200V IGBT IXGH24N120C3H1 IC25 = 48A VCE(sat) 4.2V High speed PT IGBTs for tfi(typ) = 110ns 10-50kHz Switching Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V VGEM Transient 30 V G IC25 TC = 25 C48 T

 9.7. Size:53K  ixys
 ixgh20n100 ixgt20n100.pdf

IXGH 20N100 VCES = 1000 V IGBT IXGT 20N100 IC25 = 40 A VCE(sat) = 3.0 V tfi(typ) = 280 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1000 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 1000 V E VGES Continuous 20 V (TAB) VGEM Transient 30 V TO-247 AD (IXGH) IC25 TC = 25 C40 A IC90 TC = 90 C20 A ICM TC = 25 C, 1 ms 80 A S

 9.8. Size:93K  ixys
 ixgh28n30b ixgt28n30b.pdf

IXGH 28N30B VCES = 300 V HiPerFASTTM IGBT IXGT 28N30B IC25 = 56 A VCE(sat)typ = 2.1 V tfi(typ) = 55 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 300 V VCGR TJ = 25 C to 150 C; RGE = 1 M 300 V VGES Continuous 20 V G VGEM Transient 30 V C E IC25 TC = 25 C56 A TO-268 IC90 TC = 90 C28 A (IXGT) ICM TC = 25 C, 1 ms 112 A G SSOA VGE= 15 V, TV

 9.9. Size:133K  ixys
 ixgh24n50bu1 ixgh24n60bu1.pdf

VCES IC(25) VCE(sat) tfi HiPerFASTTM IGBT 500 V 48 A 2.3 V 80 ns IXGH24N50BU1 with Diode 600 V 48 A 2.5 V 80 ns IXGH24N60BU1 Combi Pack Preliminary data TO-247 AD Symbol Test Conditions Maximum Ratings 24N50 24N60 C (TAB) VCES TJ = 25 C to 150 C 500 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 500 600 V C E VGES Continuous 20 V VGEM Transient 30 V G = Gate, C = Collector, E

 9.10. Size:34K  ixys
 ixgh25n120.pdf

VCES IC25 VCE(sat) Low VCE(sat) IXGH 25 N120 1200 V 50 A 3 V High speed IGBT IXGH 25 N120A 1200 V 50 A 4 V Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C50 A G = Gate, C = Collector, IC90 TC = 90 C25 A E = Emitter, TAB = Collector I

 9.11. Size:142K  ixys
 ixgh25n160 ixgt25n160.pdf

VCES = 1600 V IXGH 25N160 High Voltage IGBT IC25 = 75 A IXGT 25N160 VCE(sat)= 2.5 V For Capacitor Discharge Applications Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 1600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1600 V VGES Continuous 20 V G C C (TAB) VGEM Transient 30 V E IC25 TC = 25 C 75 A TO-268 (IXGT) IC110

 9.12. Size:234K  ixys
 ixgh20n120a3.pdf

VCES = 1200V GenX3TM 1200V IGBTs IXGA20N120A3 IC110 = 20A IXGP20N120A3 VCE(sat) 2.5V IXGH20N120A3 Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V VGEM Transient 30 V G

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 ixgh20n30 ixgh20n30s.pdf

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 ixgh28n60b3d1.pdf

Advance Technical Information IXGH28N60B3D1 VCES = 600V PolarHVTM IGBT IC110 = 28A VCE(sat) 1.8V TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G VGEM Transient 30 V C (TAB) C E IC25 TC = 25 C 66 A IC110 TC = 110 C 28 A IF110 TC = 110 C 10 A

 9.15. Size:93K  ixys
 ixgh28n30a ixgt28n30a.pdf

IXGH 28N30A VCES = 300 V HiPerFASTTM IGBT IXGT 28N30A IC25 = 56 A VCE(sat)typ = 1.85 V tfi(typ) = 120 ns Preliminary data TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 300 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 300 V C (TAB) E VGES Continuous 20 V VGEM Transient 30 V TO-268 (IXGT) IC25 TC = 25 C56 A IC90 TC = 90 C28 A G E ICM TC = 25 C, 1

 9.16. Size:104K  ixys
 ixgh20n120.pdf

VCES = 1200 V IXGH 20N120 IGBT IC25 = 40 A IXGT 20N120 VCE(sat) = 2.5 V tfi(typ) = 380 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V VGEM Transient 30 V G D S IC25 TC = 25 C40 A IC90 TC = 90 C20 A TO-268 (IXGT) ICM TC = 25 C, 1 ms 80 A

 9.17. Size:222K  ixys
 ixgh24n170a.pdf

Preliminary Technical Information High Voltage VCES = 1700V IXGH24N170A IGBTs IXGT24N170A IC25 = 24A VCE(sat) 6.0V tfi(typ) = 40ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V G C (TAB) VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V C E VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C 24 A TO-268 (IX

 9.18. Size:92K  ixys
 ixgh24n60c4.pdf

Advance Technical Information High-Gain IGBTs VCES = 600V IXGP24N60C4 IC110 = 24A IXGH24N60C4 VCE(sat) 2.70V tfi(typ) = 68ns High-Speed PT Trench IGBTs TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G C Tab VCGR TJ = 25 C to 150 C, RGE = 1M 600 V E VGES Continuous 20 V VGEM Transient 30 V TO-247 AD (IX

 9.19. Size:195K  ixys
 ixgh22n50b.pdf

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 ixgh28n120b ixgt28n120b.pdf

IXGH 28N120B VCES = 1200 V High Voltage IGBT IXGT 28N120B IC25 = 50 A VCE(sat) = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C50 A TO-247 AD (IXGH) IC110 TC = 110 C28 A ICM TC = 25 C, 1 ms 150 A

 9.21. Size:56K  ixys
 ixgh28n60bd1 ixgt28n60bd1.pdf

Low VCE(sat) IXGH 28N60BD1 VCES = 600 V IGBT with Diode IXGT 28N60BD1 IC25 = 40 A VCE(sat) = 2.0 V Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V E VGES Continuous 20 V C (TAB) VGEM Transient 30 V TO-247 AD (IXGH) IC25 TC = 25 C40 A IC90 TC = 90 C28 A ICM TC = 25 C, 1 ms 8

 9.22. Size:519K  ixys
 ixgh24n170a ixgt24n170a.pdf

IXGH 24N170A VCES = 1700 V High Voltage IXGT 24N170A IC25 = 24 A IGBT VCE(sat) = 6.0 V tfi(typ) = 45 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C24 A TO-247 AD (IXGH) IC90 TC = 90 C16 A ICM

 9.23. Size:137K  ixys
 ixgh24n60b.pdf

IXGH 24N60B VCES = 600 V HiPerFASTTM IGBT IC25 = 48 A VCE(sat) = 2.3 V tfi = 80 ns Preliminary Data TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V C (TAB) G IC25 TC = 25 C48 A C E IC90 TC = 90 C24 A G = Gate, C = Collector, ICM TC = 25 C, 1 ms 96 A

 9.24. Size:227K  ixys
 ixgh25n100au1.pdf

Preliminary data VCES IC25 VCE(sat) Low VCE(sat) High speed IGBT IXGH25N100U1 1000 V 50 A 3.5 V IXGH25N100AU1 1000 V 50 A 4.0 V with Diode TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1000 V G C E VCGR TJ = 25 C to 150 C; RGE = 1 M 1000 V VGES Continuous 20 V G = Gate C = Collector VGEM Transient 30 V E = Emitter TAB = Collector I

 9.25. Size:236K  ixys
 ixga20n120a3 ixgh20n120a3 ixgp20n120a3.pdf

VCES = 1200V GenX3TM 1200V IGBTs IXGA20N120A3 IC110 = 20A IXGP20N120A3 VCE(sat) 2.5V IXGH20N120A3 Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V VGEM Transient 30 V G

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 ixgh22n50bu1.pdf

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 ixgh20n60-a ixgm20n60-a.pdf

VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGH/IXGM 20 N60 600 V 40 A 2.5 V High speed IGBT IXGH/IXGM 20 N60A 600 V 40 A 3.0 V Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C40 A IC90 TC = 90 C20 A TO-204 AE (IXGM) ICM TC = 25 C, 1 ms

 9.28. Size:75K  ixys
 ixgh20n30.pdf

IXGH20N30 VCES = 300 V HiPerFASTTM IGBT IC25 = 40 A VCE(sat)typ = 1.45 V tfi(typ) = 180 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C 300 V VCGR TJ = 25 C to 150 C; RGE = 1 M 300 V VGES Continuous 20 V VGEM Transient 30 V G C (TAB) IC25 TC = 25 C40 A C E IC90 TC = 90 C20 A ICM TC = 25 C, 1 ms 80 A G = Gate, C = Collector, E = E

 9.29. Size:113K  ixys
 ixgh24n170.pdf

Advance Technical Information VCES = 1700V High Voltage IXGH24N170 IC25 = 50A IGBT IXGT24N170 VCE(sat) 3.3V tfi(typ) = 250ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V G C C (TAB) VGES Continuous 20 V E VGEM Transient 30 V TO-268 (IXGT) IC25 TC = 25 C 50 A IC9

 9.30. Size:515K  ixys
 ixgh28n60bd1.pdf

Low VCE(sat) IXGH 28N60BD1 VCES = 600 V IGBT with Diode IXGT 28N60BD1 IC25 = 40 A VCE(sat) = 2.0 V Combi Pack Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) E VGES Continuous 20 V VGEM Transient 30 V TO-247 AD (IXGH) IC25 TC = 25 C40 A IC90 TC = 90 C28 A ICM TC = 25 C, 1 ms 80 A

 9.31. Size:117K  ixys
 ixgh24n60aui.pdf

VCES = 600 V IXGH 24N60AU1 HiPerFASTTM IC25 = 48 A IXGH 24N60AU1S IGBT with Diode VCE(sat) = 2.7 V Combi Pack tfi = 275 ns TO-247 SMD (24N60AU1S) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G C (TAB) E VGES Continuous 20 V VGEM Transient 30 V TO-247 AD IC25 TC = 25 C48 A (24N60AU1) IC90 TC = 90 C

 9.32. Size:565K  ixys
 ixgh20n120b.pdf

IXGH 20N120B VCES = 1200 V High Voltage IGBT IXGT 20N120B IC25 = 40 A VCE(sat) = 3.4 V Preliminary Data Sheet tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C40 A TO-247 AD (IXGH) IC110 TC = 110 C20 A ICM

 9.33. Size:106K  ixys
 ixgh20n120 ixgt20n120.pdf

VCES = 1200 V IXGH 20N120 IGBT IC25 = 40 A IXGT 20N120 VCE(sat) = 2.5 V tfi(typ) = 380 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V VGEM Transient 30 V G D S IC25 TC = 25 C40 A IC90 TC = 90 C20 A TO-268 (IXGT) ICM TC = 25 C, 1 ms 80 A

 9.34. Size:56K  ixys
 ixgh22n170.pdf

Advance Technical Data High Voltage IXGH 22N170 VCES = 1700 V IXGT 22N170 IC25 = 40 A IGBT VCE(sat) = 3.3 V tfi(typ) = 290 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C44 A TO-247 AD (IXGH) IC90 TC = 90 C22 A ICM TC

 9.35. Size:93K  ixys
 ixgh28n30 ixgt28n30.pdf

IXGH 28N30 VCES = 300 V HiPerFASTTM IGBT IXGT 28N30 IC25 = 56 A VCE(sat)typ = 1.6 V tfi(typ) = 180 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 300 V VCGR TJ = 25 C to 150 C; RGE = 1 M 300 V G E VGES Continuous 20 V (TAB) VGEM Transient 30 V IC25 TC = 25 C56 A TO-247 AD IC90 TC = 90 C28 A ICM TC = 25 C, 1 ms 112 A SSOA VGE

 9.36. Size:173K  ixys
 ixgh25n250.pdf

Preliminary Technical Information IXGH25N250 VCES = 2500 V High Voltage IGBT IXGT25N250 IC25 = 60 A For Capacitor Discharge Applications IXGV25N250S VCE(sat) 2.9 V TO-247 (IXGH) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 2500 V C C (TAB) E VCGR TJ = 25 C to 150 C; RGE = 1 M 2500 V VGES Continuous 20 V TO-268 (IXGT) VGEM Transi

 9.37. Size:76K  ixys
 ixgh25n100a.pdf

VCES IC25 VCE(sat) Low VCE(sat) IXGH/IXGM 25 N100 1000 V 50 A 3.5 V High speed IGBT IXGH/IXGM 25 N100A 1000 V 50 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1000 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C50 A IC90 TC = 90 C25 A TO-204 AE (IXGM) ICM TC = 25 C, 1 m

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 ixgh20n140c3h1.pdf

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 ixgh28n60b.pdf

Low VCE(sat) IGBT IXGH 28N60B VCES = 600 V IXGT 28N60B IC25 = 40 A VCE(sat) = 2.0 V Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) E VGES Continuous 20 V VGEM Transient 30 V TO-247 AD IC25 TC = 25 C40 A (IXGH) IC90 TC = 90 C28 A ICM TC = 25 C, 1 ms 80 A C (TAB) SSOA VGE = 15 V,

 9.40. Size:52K  ixys
 ixgh24n60c.pdf

IXGH 24N60C VCES = 600 V HiPerFASTTM IGBT IXGT 24N60C IC25 = 48 A LightspeedTM Series VCE(sat)typ = 2.1 V tfi typ = 60 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V C (TAB) E VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C48 A TO-247 AD (IXGH) IC110 TC = 110

 9.41. Size:118K  ixys
 ixgh24n50b ixgh24n60b.pdf

VCES IC(25) VCE(sat) tfi HiPerFASTTM IGBT IXGH24N50B 500 V 48 A 2.3 V 80 ns 600 V 48 A 2.5 V 80 ns IXGH24N60B Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD 24N50 24N60 VCES TJ = 25 C to 150 C 500 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 500 600 V C (TAB) VGES Continuous 20 V G VGEM Transient 30 V C E IC25 TC = 25 C48 A G = Gate, C = Collector, IC90 TC = 9

 9.42. Size:220K  ixys
 ixgh20n100a3.pdf

Advance Technical Information VCES = 1000V GenX3TM 1000V IXGA20N100A3 IC90 = 20A IGBTs IXGP20N100A3 VCE(sat) 2.3V IXGH20N100A3 Ultra-Low Vsat PT IGBTs for up to 3kHz Switching TO-263 (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXGP) VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C, RGE = 1M 1000 V VGES Continuous 20 V

 9.43. Size:188K  ixys
 ixgh24n120c3.pdf

Preliminary Technical Information VCES = 1200V GenX3TM 1200V IGBT IXGA24N120C3 IC25 = 48A IXGH24N120C3 VCE(sat) 4.2V IXGP24N120C3 High speed PT IGBTs for tfi(typ) = 110ns 10-50kHz Switching TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V G E VGES Continuous 20 V C (TAB) V

 9.44. Size:195K  ixys
 ixgh28n120bd1.pdf

High Voltage IGBT VCES = 1200V IXGH28N120BD1 w/ Diode IC25 = 50A IXGT28N120BD1 VCE(sat) 3.5V tfi(typ) = 170ns TO-247AD (IXGH) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 1200 V C E (TAB) VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V TO-268 (IXGT) VGEM Transient 30 V IC25 TC = 25 C ( Chip Capability ) 50 A I

 9.45. Size:76K  ixys
 ixgh25n100.pdf

VCES IC25 VCE(sat) Low VCE(sat) IXGH/IXGM 25 N100 1000 V 50 A 3.5 V High speed IGBT IXGH/IXGM 25 N100A 1000 V 50 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1000 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C50 A IC90 TC = 90 C25 A TO-204 AE (IXGM) ICM TC = 25 C, 1 m

 9.46. Size:52K  ixys
 ixgh20n60bd1.pdf

IXGH 20N60BD1 HiPerFASTTM IGBT VCES = 600 V IXGT 20N60BD1 with Diode IC25 = 40 A VCE(sat)typ = 1.7 V tfi(typ) = 100 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V E C (TAB) VGES Continuous 20 V VGEM Transient 30 V TO-247 AD IC25 TC = 25 C40 A (IXGH) IC90 TC = 90 C20 A

 9.47. Size:223K  ixys
 ixgh24n170ah1.pdf

Preliminary Technical Information High Voltage VCES = 1700V IXGH24N170AH1 IGBTs w/Diode IXGT24N170AH1 IC25 = 24A VCE(sat) 6.0V tfi(typ) = 40ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V G C (TAB) VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V C E VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C 24 A

 9.48. Size:198K  ixys
 ixgh28n140b3h1.pdf

GenX3TM 1400V VCES = 1400V IXGH28N140B3H1 IC110 = 28A IGBTs w/ Diode IXGX28N140B3H1 VCE(sat) 3.60V IXGK28N140B3H1 Avalanche Rated TO-247 (IXGH) G C Tab E Symbol Test Conditions Maximum Ratings PLUS247 (IXGX) VCES TJ = 25 C to 150 C 1400 V VCGR TJ = 25 C to 150 C, RGE = 1M 1400 V VGES Continuous 20 V VGEM Transient 30 V G C IC25 TC = 25 C

 9.49. Size:79K  ixys
 ixgh20n60b.pdf

VCES = 600 V IXGH 20N60B HiPerFASTTM IGBT IC25 = 40 A IXGT 20N60B VCE(sat)typ = 1.7 V tfi(typ) = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-268 (D3) (IXGT) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V G (TAB) E VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C40 A TO-247 AD (IXGH) IC90 TC = 90 C20 A ICM T

 9.50. Size:138K  ixys
 ixgh25n160.pdf

VCES = 1600 V IXGH 25N160 High Voltage IGBT IC25 = 75 A IXGT 25N160 VCE(sat)= 2.5 V For Capacitor Discharge Applications Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 1600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1600 V VGES Continuous 20 V G C C (TAB) VGEM Transient 30 V E IC25 TC = 25 C 75 A TO-268 (IXGT) IC110

 9.51. Size:572K  ixys
 ixgh28n120b.pdf

IXGH 28N120B VCES = 1200 V High Voltage IGBT IXGT 28N120B IC25 = 50 A VCE(sat) = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C50 A TO-247 AD (IXGH) IC110 TC = 110 C28 A ICM TC = 25 C, 1 ms 150 A

 9.52. Size:52K  ixys
 ixgh20n100.pdf

IXGH 20N100 VCES = 1000 V IGBT IXGT 20N100 IC25 = 40 A VCE(sat) = 3.0 V tfi(typ) = 280 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1000 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 1000 V E VGES Continuous 20 V (TAB) VGEM Transient 30 V TO-247 AD (IXGH) IC25 TC = 25 C40 A IC90 TC = 90 C20 A ICM TC = 25 C, 1 ms 80 A S