IXGH2N250 Specs and Replacement

Type Designator: IXGH2N250

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 32 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 2500 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 5.5 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.6 V @25℃

tr ⓘ - Rise Time, typ: 74 nS

Coesⓘ - Output Capacitance, typ: 8.7 pF

Package: TO247

 IXGH2N250 Substitution

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IXGH2N250 datasheet

 ..1. Size:175K  ixys
ixgh2n250.pdf pdf_icon

IXGH2N250

Advance Technical Information High Voltage IGBTs VCES = 2500V IXGH2N250 IXGT2N250 IC110 = 2A for Capacitor Discharge VCE(sat) 3.1V Applications TO-247 (IXGH) Symbol Test Conditions Maximum Ratings G C (TAB) VCES TC = 25 C to 150 C 2500 V C E VCGR TJ = 25 C to 150 C, RGE = 1M 2500 V VGES Continuous 20 V VGEM Transient 30 V TO-268 (IXGT) IC2... See More ⇒

 9.1. Size:89K  ixys
ixgh28n90b.pdf pdf_icon

IXGH2N250

IXGH 28N90B VCES = 900 V HiPerFASTTM IGBT IXGT 28N90B IC25 = 51 A VCE(SAT) = 2.7 V Preliminary data sheet tfi(typ) = 130 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 900 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 900 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C51 A IC110 TC = 110 C28 A TO-268 (D3) ICM TC = ... See More ⇒

 9.2. Size:568K  ixys
ixgh20n120b ixgt20n120b.pdf pdf_icon

IXGH2N250

IXGH 20N120B VCES = 1200 V High Voltage IGBT IXGT 20N120B IC25 = 40 A VCE(sat) = 3.4 V Preliminary Data Sheet tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C40 A TO-247 AD (IXGH) IC110 TC = 110 C20 A ICM... See More ⇒

 9.3. Size:101K  ixys
ixgh24n60cd1.pdf pdf_icon

IXGH2N250

IXGH 24N60CD1 VCES = 600 V HiPerFASTTM IGBT IXGT 24N60CD1 IC25 = 48 A with Diode VCE(sat) = 2.5 V Lightspeed Series Preliminary data TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C48 A TO-247 AD (IXGH) IC110 TC = 110 C24 A ... See More ⇒

Specs: IXGH24N60C4D1, IXGH25N160, IXGH25N250, IXGH28N120B, IXGH28N120BD1, IXGH28N140B3H1, IXGH28N60B3D1, IXGH28N60BD1, IRGP4063, IXGH30N120B3, IXGH30N120B3D1, IXGH30N120C3H1, IXGH30N60B2, IXGH30N60B2D1, IXGH30N60B4, IXGH30N60C2, IXGH30N60C2D1

Keywords - IXGH2N250 transistor spec

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