IXGH36N60B3D1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGH36N60B3D1

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 250 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃

trⓘ - Tiempo de subida, typ: 24 nS

Coesⓘ - Capacitancia de salida, typ: 120 pF

Encapsulados: TO247

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IXGH36N60B3D1 datasheet

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IXGH36N60B3D1

GenX3TM 600V IGBT VCES = 600V IXGH36N60B3D1 w/ Diode IC110 = 36A VCE(sat) 1.8V Medium-Speed Low-Vsat PT IGBT for 5 - 40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C (TAB) E VGES Continuous 20 V VGEM Transient 30 V IC110 TC = 110 C 36 A G = Gate C = Col

 2.1. Size:200K  ixys
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IXGH36N60B3D1

VCES = 600V GenX3TM 600V IGBT IXGH36N60B3D4 IC110 = 36A VCE(sat) 1.8V Medium speed low Vsat PT IGBT for 5-40kHz switching TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G TAB C VGEM Transient 30 V E IC110 TC = 110 C 36 A IF110 TC = 110 C 10 A

 3.1. Size:160K  ixys
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IXGH36N60B3D1

Advance Technical Information GenX3TM 600V IGBT VCES = 600V IXGH36N60B3 IC110 = 36A VCE(sat) 1.8V Medium-Speed Low-Vsat PT IGBT for 5 - 40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C Tab E VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C 92 A

 3.2. Size:178K  ixys
 ixgh36n60b3c1.pdf pdf_icon

IXGH36N60B3D1

Preliminary Technical Information GenX3TM 600V IGBT VCES = 600V IXGH36N60B3C1 w/ SiC Anti-Parallel IC110 = 36A Diode VCE(sat) 1.8V tfi(typ) = 100ns Medium Speed Low Vsat PT IGBT for 5 - 40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G (TAB) VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C E VGES Continuous 20

MOSTRAR MÁS

Otros transistores... IXGH32N90B2D1, IXGH34N60B2, IXGH35N120B, IXGH35N120C, IXGH36N60A3, IXGH36N60A3D4, IXGH36N60B3, IXGH36N60B3C1, SGT50T65FD1PN, IXGH36N60B3D4, IXGH40N120A2, IXGH40N120B2D1, IXGH40N120C3, IXGH40N120C3D1, IXGH40N60B, IXGH40N60B2, IXGH40N60B2D1