All IGBT. IXGH36N60B3D1 Datasheet

 

IXGH36N60B3D1 Datasheet and Replacement


   Type Designator: IXGH36N60B3D1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 24 nS
   Coesⓘ - Output Capacitance, typ: 120 pF
   Qgⓘ - Total Gate Charge, typ: 80 nC
   Package: TO247
      - IGBT Cross-Reference

 

IXGH36N60B3D1 Datasheet (PDF)

 ..1. Size:173K  ixys
 ixgh36n60b3d1.pdf pdf_icon

IXGH36N60B3D1

GenX3TM 600V IGBT VCES = 600VIXGH36N60B3D1w/ Diode IC110 = 36A VCE(sat) 1.8V Medium-Speed Low-Vsat PT IGBTfor 5 - 40kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 VC (TAB)EVGES Continuous 20 VVGEM Transient 30 VIC110 TC = 110C 36 AG = Gate C = Col

 2.1. Size:200K  ixys
 ixgh36n60b3d4.pdf pdf_icon

IXGH36N60B3D1

VCES = 600VGenX3TM 600V IGBTIXGH36N60B3D4IC110 = 36AVCE(sat) 1.8VMedium speed low Vsat PTIGBT for 5-40kHz switchingTO-247 AD (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 V GTABCVGEM Transient 30 VEIC110 TC = 110C 36 AIF110 TC = 110C 10 A

 3.1. Size:160K  ixys
 ixgh36n60b3.pdf pdf_icon

IXGH36N60B3D1

Advance Technical InformationGenX3TM 600V IGBT VCES = 600VIXGH36N60B3IC110 = 36A VCE(sat) 1.8V Medium-Speed Low-Vsat PT IGBTfor 5 - 40kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 VC TabEVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C 92 A

 3.2. Size:178K  ixys
 ixgh36n60b3c1.pdf pdf_icon

IXGH36N60B3D1

Preliminary Technical InformationGenX3TM 600V IGBT VCES = 600VIXGH36N60B3C1w/ SiC Anti-Parallel IC110 = 36ADiode VCE(sat) 1.8Vtfi(typ) = 100nsMedium Speed Low Vsat PTIGBT for 5 - 40kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VG (TAB)VCGR TJ = 25C to 150C, RGE = 1M 600 V CEVGES Continuous 20

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Datasheet: IXGH32N90B2D1 , IXGH34N60B2 , IXGH35N120B , IXGH35N120C , IXGH36N60A3 , IXGH36N60A3D4 , IXGH36N60B3 , IXGH36N60B3C1 , IRG7IC28U , IXGH36N60B3D4 , IXGH40N120A2 , IXGH40N120B2D1 , IXGH40N120C3 , IXGH40N120C3D1 , IXGH40N60B , IXGH40N60B2 , IXGH40N60B2D1 .

History: MMG300D120B6TC

Keywords - IXGH36N60B3D1 transistor datasheet

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