IXGH36N60B3D1 Spec and Replacement, IGBT Equivalent Finder, Cross Reference

IXGH36N60B3D1 Specs and Replacement

   Type Designator: IXGH36N60B3D1
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings

   Pc ⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 75 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   tr ⓘ - Rise Time, typ: 24 nS
   Coesⓘ - Output Capacitance, typ: 120 pF
   Package: TO247

IXGH36N60B3D1 Substitution

- IGBT ⓘ Cross-Reference Search

IXGH36N60B3D1 datasheet

..1. Size:173K ixys
ixgh36n60b3d1.pdf pdf_icon

GenX3TM 600V IGBT VCES = 600V IXGH36N60B3D1 w/ Diode IC110 = 36A VCE(sat) 1.8V Medium-Speed Low-Vsat PT IGBT for 5 - 40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C (TAB) E VGES Continuous 20 V VGEM Transient 30 V IC110 TC = 110 C 36 A G = Gate C = Col... See More ⇒

2.1. Size:200K ixys
ixgh36n60b3d4.pdf pdf_icon

VCES = 600V GenX3TM 600V IGBT IXGH36N60B3D4 IC110 = 36A VCE(sat) 1.8V Medium speed low Vsat PT IGBT for 5-40kHz switching TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G TAB C VGEM Transient 30 V E IC110 TC = 110 C 36 A IF110 TC = 110 C 10 A ... See More ⇒

3.1. Size:160K ixys
ixgh36n60b3.pdf pdf_icon

Advance Technical Information GenX3TM 600V IGBT VCES = 600V IXGH36N60B3 IC110 = 36A VCE(sat) 1.8V Medium-Speed Low-Vsat PT IGBT for 5 - 40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C Tab E VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C 92 A ... See More ⇒

3.2. Size:178K ixys
ixgh36n60b3c1.pdf pdf_icon

Preliminary Technical Information GenX3TM 600V IGBT VCES = 600V IXGH36N60B3C1 w/ SiC Anti-Parallel IC110 = 36A Diode VCE(sat) 1.8V tfi(typ) = 100ns Medium Speed Low Vsat PT IGBT for 5 - 40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G (TAB) VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C E VGES Continuous 20... See More ⇒

Specs: IXGH32N90B2D1 , IXGH34N60B2 , IXGH35N120B , IXGH35N120C , IXGH36N60A3 , IXGH36N60A3D4 , IXGH36N60B3 , IXGH36N60B3C1 , SGT50T65FD1PN , IXGH36N60B3D4 , IXGH40N120A2 , IXGH40N120B2D1 , IXGH40N120C3 , IXGH40N120C3D1 , IXGH40N60B , IXGH40N60B2 , IXGH40N60B2D1 .