IXGH48N60A3D1 Todos los transistores

VCES = 600V GenX3TM 600V IGBT IXGH48N60A3D1 w/Diode IC110 = 48A VCE(sat) 1.35V Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 600 V G C Tab VCGR TJ = 25 C to 150 C, RGE = 1M 600 V E VGES Continuous 20 V VGEM Transient 30 V G = Gate C = Collector E = Emitter Tab = Colle

IXGA48N60A3 VCES = 600V GenX3TM 600V IXGP48N60A3 IGBTs IC110 = 48A IXGH48N60A3 VCE(sat) 1.35V Ultra Low Vsat PT IGBTs for TO-263 (IXGA) up to 5kHz switching G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TJ = 25 C to 150 C 600 V TO-220 (IXGP) VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G IC25 TC =

IXGA48N60C3 VCES = 600V GenX3TM 600V IGBT IXGH48N60C3 IC110 = 48A IXGP48N60C3 VCE(sat) 2.5V High Speed PT IGBTs for tfi(typ) = 38ns 40-100kHz switching TO-263 (IXGA) Symbol Test Conditions Maximum Ratings G VCES TC = 25 C to 150 C 600 V E (TAB) VCGR TJ = 25 C to 150 C, RGE = 1M 600 V TO-247 (IXGH) VGES Continuous 20 V VGEM Transient 30 V I

IXGA48N60B3 VCES = 600V GenX3TM 600V IGBT IXGP48N60B3 IC110 = 48A IXGH48N60B3 VCE(sat) 1.8V Medium speed low Vsat PT IGBTs 5-40 kHz switching TO-263 (IXGA) Symbol Test Conditions Maximum Ratings G E VCES TC = 25 C to 150 C 600 V (TAB) VCGR TJ = 25 C to 150 C, RGE = 1M 600 V TO-220 (IXGP) VGES Continuous 20 V VGEM Transient 30 V IC110 TC = 1

VCES = 600V IXGH48N60C3D1 GenX3TM 600V IGBT IC110 = 48A with Diode VCE(sat) 2.5V tfi(typ) = 38ns High speed PT IGBT for 40-100kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G VGES Continuous 20 V C E VGEM Transient 30 V ( TAB ) IC25 TC = 25 C (Limited by Leads)

GenX3TM 600V IGBTs IXGI48N60C3 VCES = 600V IXGA48N60C3 IC110 = 48A IXGP48N60C3 2.5V High-Speed PT IGBTs for VCE(sat) 40-100kHz Switching IXGH48N60C3 tfi(typ) = 38ns Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V Features VGES Continuous 20 V Optimized for Low Switching Losses VGEM Tra

Preliminary Technical Information GenX3TM 600V IGBT VCES = 600V IXGH48N60B3C1 w/ SiC Anti-Parallel IC110 = 48A Diode VCE(sat) 1.8V tfi(typ) = 116ns Medium Speed Low Vsat PT IGBT 5 - 40 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C, RGE = 1M 600 V ( TAB ) C E VGES Continuous 20

Preliminary Technical Information VCES = 600V GenX3TM 600V IGBT IXGH48N60B3D1 with Diode IC110 = 48A VCE(sat) 1.8V Medium speed low Vsat PT IGBTs 5-40 kHz switching TO-247(IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G ( TAB ) C E I

Preliminary Technical Information GenX3TM 600V IGBT VCES = 600V IXGH48N60C3C1 w/ SiC Anti-Parallel IC110 = 48A Diode VCE(sat) 2.5V tfi(typ) = 38ns High Speed PT IGBT for 40 - 100kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G C VGES Continuous 20 V E ( TAB ) VGEM