VCES = 600VGenX3TM 600V IGBTIXGH48N60A3D1w/Diode IC110 = 48AVCE(sat) 1.35VUltra Low Vsat PT IGBT forup to 5kHz switchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 600 VGC TabVCGR TJ = 25C to 150C, RGE = 1M 600 VEVGES Continuous 20 VVGEM Transient 30 V G = Gate C = CollectorE = Emitter Tab = Colle

IXGA48N60A3 VCES = 600VGenX3TM 600VIXGP48N60A3IGBTs IC110 = 48AIXGH48N60A3VCE(sat) 1.35VUltra Low Vsat PT IGBTs forTO-263 (IXGA)up to 5kHz switchingGESymbol Test Conditions Maximum RatingsC (Tab)VCES TJ = 25C to 150C 600 VTO-220 (IXGP)VCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGIC25 TC =

IXGA48N60C3 VCES = 600VGenX3TM 600V IGBTIXGH48N60C3IC110 = 48AIXGP48N60C3VCE(sat) 2.5VHigh Speed PT IGBTs fortfi(typ) = 38ns40-100kHz switchingTO-263 (IXGA)Symbol Test Conditions Maximum RatingsGVCES TC = 25C to 150C 600 VE (TAB)VCGR TJ = 25C to 150C, RGE = 1M 600 VTO-247 (IXGH)VGES Continuous 20 VVGEM Transient 30 VI

IXGA48N60B3 VCES = 600VGenX3TM 600V IGBTIXGP48N60B3IC110 = 48AIXGH48N60B3VCE(sat) 1.8VMedium speed low Vsat PTIGBTs 5-40 kHz switchingTO-263 (IXGA)Symbol Test Conditions Maximum RatingsGEVCES TC = 25C to 150C 600 V (TAB)VCGR TJ = 25C to 150C, RGE = 1M 600 VTO-220 (IXGP)VGES Continuous 20 VVGEM Transient 30 VIC110 TC = 1

VCES = 600VIXGH48N60C3D1GenX3TM 600V IGBTIC110 = 48Awith DiodeVCE(sat) 2.5Vtfi(typ) = 38nsHigh speed PT IGBT for40-100kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous 20 VCEVGEM Transient 30 V ( TAB )IC25 TC = 25C (Limited by Leads)

GenX3TM 600V IGBTs IXGI48N60C3 VCES = 600V IXGA48N60C3IC110 = 48A IXGP48N60C3 2.5VHigh-Speed PT IGBTs for VCE(sat) 40-100kHz Switching IXGH48N60C3tfi(typ) = 38nsSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 V FeaturesVGES Continuous 20 V Optimized for Low Switching LossesVGEM Tra

Preliminary Technical InformationGenX3TM 600V IGBT VCES = 600VIXGH48N60B3C1w/ SiC Anti-Parallel IC110 = 48ADiode VCE(sat) 1.8Vtfi(typ) = 116nsMedium Speed Low Vsat PTIGBT 5 - 40 kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 V ( TAB )CEVGES Continuous 20

Preliminary Technical InformationVCES = 600VGenX3TM 600V IGBTIXGH48N60B3D1with Diode IC110 = 48AVCE(sat) 1.8VMedium speed low Vsat PTIGBTs 5-40 kHz switchingTO-247(IXGH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 V G ( TAB )CEI

Preliminary Technical InformationGenX3TM 600V IGBT VCES = 600VIXGH48N60C3C1w/ SiC Anti-Parallel IC110 = 48ADiode VCE(sat) 2.5Vtfi(typ) = 38nsHigh Speed PT IGBT for40 - 100kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGCVGES Continuous 20 V E ( TAB )VGEM